D2 PA K BUK962R8-30B N-channel TrenchMOS logic level FET Rev. 3 — 8 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 30 V ID drain current VGS = 5 V; Tmb = 25 °C; see Figure 3; see Figure 1 - - 75 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 300 W VGS = 10 V; ID = 25 A; Tj = 25 °C - 2 2.4 mΩ VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 - 2.4 2.8 mΩ [1] Static characteristics RDSon drain-source on-state resistance BUK962R8-30B NXP Semiconductors N-channel TrenchMOS logic level FET Table 1. Symbol Quick reference data …continued Parameter Conditions Min Typ Max Unit - - 2.3 J - 35 - nC Avalanche ruggedness EDS(AL)S non-repetitive ID = 75 A; Vsup ≤ 30 V; drain-source RGS = 50 Ω; VGS = 5 V; avalanche energy Tj(init) = 25 °C; unclamped Dynamic characteristics QGD [1] gate-drain charge VGS = 5 V; ID = 25 A; VDS = 24 V; Tj = 25 °C; see Figure 13 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate Simplified outline 2 D drain[1] 3 S source mb D mounting base; connected to drain Graphic symbol D mb G mbb076 S 2 1 3 SOT404 (D2PAK) [1] It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number BUK962R8-30B BUK962R8-30B Product data sheet Package Name Description D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 February 2011 Version © NXP B.V. 2011. All rights reserved. 2 of 14 BUK962R8-30B NXP Semiconductors N-channel TrenchMOS logic level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 30 V VDGR drain-gate voltage RGS = 20 kΩ - 30 V VGS gate-source voltage ID drain current -15 15 V Tmb = 25 °C; VGS = 5 V; see Figure 3; see Figure 1 [1] - 237 A [2] - 75 A Tmb = 100 °C; VGS = 5 V; see Figure 1 [2] - 75 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 - 950 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 300 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C [3] - 75 A [1] - 237 A pulsed; tp ≤ 10 µs; Tmb = 25 °C - 950 A ID = 75 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped - 2.3 J Source-drain diode source current IS Tmb = 25 °C peak source current ISM Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy [1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package. [3] Continuous current is limited by package. BUK962R8-30B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 February 2011 © NXP B.V. 2011. All rights reserved. 3 of 14 BUK962R8-30B NXP Semiconductors N-channel TrenchMOS logic level FET 03ng51 250 ID (A) 03na19 120 Pder (%) 200 80 150 100 40 50 Capped at 75 A due to package 0 0 50 100 150 0 200 0 50 100 150 Fig 1. 200 Tmb (°C) Tmb (°C) Normalized continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature 03ng27 104 ID (A) 103 Limit RDSon = VDS/ID tp = 10 μs 100 μs 102 1 ms Capped at 75 A due to package 10 ms DC 100 ms 10 1 10−1 1 102 10 VDS (V) Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK962R8-30B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 February 2011 © NXP B.V. 2011. All rights reserved. 4 of 14 BUK962R8-30B NXP Semiconductors N-channel TrenchMOS logic level FET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - - 0.5 K/W Rth(j-a) thermal resistance from junction to ambient mounted on a printed-circuit board; minimum footprint - 50 - K/W 03ng28 1 Zth(j-mb) (K/W) 10−1 δ = 0.5 0.2 0.1 0.05 10−2 0.02 Single Shot 10−3 10−6 δ= P tp T t tp T 10−5 10−4 10−3 10−2 10−1 1 tp (s) Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK962R8-30B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 February 2011 © NXP B.V. 2011. All rights reserved. 5 of 14 BUK962R8-30B NXP Semiconductors N-channel TrenchMOS logic level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 30 - - V ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 27 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10 1.1 1.5 2 V ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10 0.5 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 - - 2.3 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µA VDS = 30 V; VGS = 0 V; Tj = 175 °C - - 500 µA IGSS gate leakage current VGS = 15 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -15 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 5 V; ID = 25 A; Tj = 175 °C; see Figure 11; see Figure 12 - - 5.3 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C - 2 2.4 mΩ VGS = 4.5 V; ID = 25 A; Tj = 25 °C - - 3 mΩ VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 - 2.4 2.8 mΩ ID = 25 A; VDS = 24 V; VGS = 5 V; Tj = 25 °C; see Figure 13 - 89 - nC - 22 - nC - 35 - nC - 7640 10185 pF - 1600 1920 pF - 735 1006 pF - 71 - ns - 222 - ns - 260 - ns RDSon drain-source on-state resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time LD internal drain inductance LS internal source inductance BUK962R8-30B Product data sheet VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 14 VDS = 30 V; RL = 1.2 Ω; VGS = 5 V; RG(ext) = 10 Ω; Tj = 25 °C - 195 - ns from upper edge of drain mounting base to centre of die; Tj = 25 °C - 2.5 - nH from drain lead 6 mm from package to centre of die; Tj = 25 °C - 4.5 - nH from source lead to source bond pad; Tj = 25 °C - 7.5 - nH All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 February 2011 © NXP B.V. 2011. All rights reserved. 6 of 14 BUK962R8-30B NXP Semiconductors N-channel TrenchMOS logic level FET Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit - 0.85 1.2 V - 109 - ns - 171 - nC Source-drain diode VSD source-drain voltage IS = 40 A; VGS = 0 V; Tj = 25 °C; see Figure 15 trr reverse recovery time Qr recovered charge IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V; VDS = 20 V; Tj = 25 °C 300 ID 10 (A) 250 03ng24 5 03ng23 5 4 RDSon (mΩ) VGS = 3.8 V 3.6 200 4 3.4 150 3.2 100 3 3 2.8 50 2.6 2.4 0 Fig 5. 0 2 4 6 8 2 10 VDS (V) Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. 03ng53 10−1 0 5 10 VGS (V) 15 Drain-source on-state resistance as a function of gate-source voltage; typical values 03ng21 150 gfs (S) ID (A) 125 10−2 min typ 100 max 10−3 75 10−4 50 10−5 25 10−6 0 0 1 2 3 0 VGS (V) Fig 7. Sub-threshold drain current as a function of gate-source voltage BUK962R8-30B Product data sheet Fig 8. 20 40 60 ID (A) 80 Forward transconductance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 February 2011 © NXP B.V. 2011. All rights reserved. 7 of 14 BUK962R8-30B NXP Semiconductors N-channel TrenchMOS logic level FET 03ng22 100 ID (A) 03ng52 2.5 VGS(th) (V) 80 2.0 60 1.5 40 1.0 Tj = 175 °C min 0.5 0 1 2 3 0 −60 4 VGS (V) Fig 9. typ Tj = 25 °C 20 0 max Transfer characteristics: drain current as a function of gate-source voltage; typical values 3 RDSon (mΩ) 3.4 3.2 120 180 Tj (°C) 03aa27 2 3.8 3.6 60 Fig 10. Gate-source threshold voltage as a function of junction temperature 03ng25 6 0 a 1.5 5 4 1 4 VGS = 5 V 0.5 3 10 2 0 50 100 150 200 250 300 ID (A) Fig 11. Drain-source on-state resistance as a function of drain current; typical values BUK962R8-30B Product data sheet 0 −60 0 60 120 Tj (°C) 180 Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 February 2011 © NXP B.V. 2011. All rights reserved. 8 of 14 BUK962R8-30B NXP Semiconductors N-channel TrenchMOS logic level FET 03ng20 5 VGS (V) 03ng26 14000 C (pF) 12000 VDD = 14 V 4 Ciss 10000 VDD = 24 V 3 8000 Coss 6000 2 4000 Crss 1 2000 0 0 20 40 60 80 0 100 QG (nC) 10−1 1 102 10 VDS (V) Fig 13. Gate-source voltage as a function of turn-on gate charge; typical values Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 03ng19 100 IS (A) 80 60 40 Tj = 175 °C 20 Tj = 25 °C 0 0.0 0.2 0.4 0.6 0.8 1.0 VSD (V) Fig 15. Reverse diode current as a function of reverse diode voltage; typical values BUK962R8-30B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 February 2011 © NXP B.V. 2011. All rights reserved. 9 of 14 BUK962R8-30B NXP Semiconductors N-channel TrenchMOS logic level FET 7. Package outline SOT404 Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-02-11 06-03-16 SOT404 Fig 16. Package outline SOT404 (D2PAK) BUK962R8-30B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 February 2011 © NXP B.V. 2011. All rights reserved. 10 of 14 BUK962R8-30B NXP Semiconductors N-channel TrenchMOS logic level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK962R8-30B v.3 20110208 Product data sheet - Modifications: BUK95_962R8_30B v.2 (9397 750 10273) BUK962R8-30B Product data sheet BUK95_962R8_30B v.2 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate. Type number BUK962R8-30B separated from data sheet BUK95_962R8_30B v.2. 20021014 Product data - All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 February 2011 BUK95_962R8_30B v.1 © NXP B.V. 2011. All rights reserved. 11 of 14 BUK962R8-30B NXP Semiconductors N-channel TrenchMOS logic level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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This document supersedes and replaces all information supplied prior to the publication hereof. BUK962R8-30B Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. The product is not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 February 2011 © NXP B.V. 2011. All rights reserved. 12 of 14 BUK962R8-30B NXP Semiconductors N-channel TrenchMOS logic level FET agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 9.4 No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BUK962R8-30B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 February 2011 © NXP B.V. 2011. All rights reserved. 13 of 14 BUK962R8-30B NXP Semiconductors N-channel TrenchMOS logic level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 8 February 2011 Document identifier: BUK962R8-30B