AP80T10GR-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
100V
RDS(ON)
9.5mΩ
ID
G
85A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-262 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Symbol
G
D
TO-262(R)
S
.
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current (Chip)
85
A
80
A
60
A
300
A
166
W
Parameter
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
3
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
0.9
℃/W
62
℃/W
1
201008171
AP80T10GR-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
100
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=40A
-
-
9.5
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=40A
-
75
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=40A
-
115
180
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=80V
-
30
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
48
-
nC
2
td(on)
Turn-on Delay Time
VDS=50V
-
21
-
ns
tr
Rise Time
ID=30A
-
58
-
ns
td(off)
Turn-off Delay Time
RG=1Ω,VGS=10V
-
41
-
ns
tf
Fall Time
RD=1.66Ω
-
15
-
ns
Ciss
Input Capacitance
VGS=0V
-
6000 9600
pF
Coss
Output Capacitance
VDS=25V
-
550
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
300
-
pF
Min.
Typ.
IS=40A, VGS=0V
-
-
1.3
V
.
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V
-
75
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
230
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP80T10GR-HF
250
160
T C = 25 o C
ID , Drain Current (A)
ID , Drain Current (A)
200
10V
9.0V
8.0V
7.0V
V G = 6.0V
o
T C = 1 75 C
10V
9.0V
8.0V
7.0V
150
V G = 6.0V
100
120
80
40
50
0
0
0
4
8
12
16
20
0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
6
8
10
Fig 2. Typical Output Characteristics
2.8
1.2
I D =40A
V G =10V
1.1
1
.
Normalized RDS(ON)
2.4
Normalized BVDSS (V)
2
V DS , Drain-to-Source Voltage (V)
2.0
1.6
1.2
0.9
0.8
0.4
0.8
-50
0
50
100
150
-50
200
0
T j , Junction Temperature ( o C)
50
100
150
200
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
40
1.4
Normalized VGS(th) (V)
1.2
IS(A)
30
20
T j =175 o C
T j =25 o C
1
0.8
0.6
10
0.4
0
0.2
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
200
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP80T10GR-HF
f=1.0MHz
12
10000
I D = 40 A
8000
V DS = 50 V
V DS = 60 V
V DS = 80 V
8
6000
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C iss
4000
4
2000
2
0
C oss
C rss
0
0
40
80
120
160
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this
area limited by
RDS(ON)
ID (A)
100
100us
1ms
.
10
10ms
o
T c =25 C
Single Pulse
100ms
DC
Normalized Thermal Response (Rthjc)
1000
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4