DMN53D0LT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary ID TA = +25°C • N-Channel MOSFET • Low On-Resistance 350 mA • Very Low Gate Threshold Voltage 200 mA • Low Input Capacitance • Fast Switching Speed • Low Input/ Output Leakage Description and Applications • Ultra-Small Surface Mount Package • ESD Protected to 2KV This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) ideal for high efficiency power management applications. • Qualified to AEC-Q101 Standards for High Reliability V(BR)DSS RDS(ON) 1.6Ω @ VGS = 10V 50V NEW PRODUCT Features and Benefits 2.5Ω @ VGS = 4.5V Mechanical Data • • Case: SOT523 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 • Terminal Connections: See Diagram • Weight: 0.002 grams (approximate) Drain SOT523 D Gate G ESD PROTECTED Gate Protection Diode Top View Ordering Information Top View Source (Note 4) Part Number DMN53D0LT-7 DMN53D0LT-13 Notes: S Case SOT-523 SOT-523 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information T53 = Product Type Marking Code YM = Date Code Marking Y = Year ex: B = 2014 M = Month ex: 9 = September Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMN53D0LT Document number: DS37073 Rev. 2 - 2 Mar 3 2016 D Apr 4 May 5 2017 E Jun 6 1 of 5 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D June 2014 © Diodes Incorporated DMN53D0LT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Value Unit V Drain Source Voltage VDSS 50 Gate-Source Voltage VGSS ±20 V Drain Current (Note 5) ID 350 mA Symbol Value Unit PD 300 mW RθJA 420 °C/W TJ, TSTG -55 to +150 °C Thermal Characteristics NEW PRODUCT Symbol (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Symbol Min Typ Drain-Source Breakdown Voltage BVDSS 50 ⎯ ⎯ V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0 µA VDS = 50V, VGS = 0V IGSS ⎯ ⎯ ⎯ µA VGS = ±20V, VDS = 0V VGS(th) 0.8 ⎯ 1.5 V VDS = VGS, ID = 250μA RDS (ON) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.6 2.5 4.5 Ω VGS = 10V, ID = 500mA VGS = 4.5V, ID = 200mA VGS = 2.5V, ID = 100mA VSD ⎯ ⎯ 1.4 V VGS = 0V, IS = 500mA Input Capacitance Ciss ⎯ 46 ⎯ pF Output Capacitance Coss ⎯ 5.3 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 4.0 ⎯ pF Total Gate Charge Qg ⎯ 0.6 ⎯ nC Gate-Source Charge Qgs ⎯ 0.2 ⎯ nC Gate-Drain Charge Qgd ⎯ 0.1 ⎯ nC Turn-On Delay Time tD(on) ⎯ 2.7 ⎯ ns Turn-On Rise Time tr ⎯ 2.5 ⎯ ns Turn-Off Delay Time tD(off) ⎯ 19 ⎯ ns tf ⎯ 11 ⎯ ns Gate-Body Leakage Max Unit Test Condition ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Turn-Off Fall Time Notes: VDS = 25V, VGS = 0V f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMN53D0LT Document number: DS37073 Rev. 2 - 2 2 of 5 www.diodes.com June 2014 © Diodes Incorporated DMN53D0LT 1.5 0.8 0.9 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5V VGS = 5V VGS = 4.5V VGS = 2.5V VGS = 3.5V 0.6 0.3 0.6 TA = 150°C 0.4 TA = 85°C TA = 125°C 0.2 VGS = 2V TA = 25°C VGS = 1.8V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 1 0.9 VGS = 5V 0.8 VGS = 10V 0.7 0.6 0.5 0 0.2 0.4 0.6 0.8 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2.4 2.0 VGS = 10V ID = 500mA 1.6 VGS = 5V ID = 300mA 1.2 0.8 0.4 -50 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 1.2 1 VGS = 3V VGS = 10V -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMN53D0LT Document number: DS37073 Rev. 2 - 2 3 of 5 www.diodes.com TA = -55°C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 2.5 VGS = 4.5V 2 TA = 150°C T A = 125°C 1.5 T A = 85°C 1 T A = 25°C 0.5 0 TA = -55°C 0 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 1 2 1.8 1.6 1.4 VGS = 5V ID = 300mA 1.2 1 0.8 VGS = 10V ID = 500mA 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature June 2014 © Diodes Incorporated DMN53D0LT 0.8 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 1.0 1.8 1.6 1.4 ID = 1mA 1.2 ID = 250µA 1.0 0.8 TA = 150°C 0.6 TA = 125°C 0.4 TA = 25°C TA = 85°C 0.2 TA = -55°C 0.6 -50 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 100 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10 Ciss VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) NEW PRODUCT 2.0 10 Coss Crss 8 6 VDS = 10V ID = 250mA 4 2 f = 1MHz 1 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 40 0 0 0.3 0.6 0.9 1.2 1.5 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. SOT523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 ⎯ ⎯ G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0° 8° α ⎯ All Dimensions in mm A B C G H K J M N D DMN53D0LT Document number: DS37073 Rev. 2 - 2 L 4 of 5 www.diodes.com June 2014 © Diodes Incorporated DMN53D0LT Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. Y NEW PRODUCT Z C X Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7 E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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