Diode Semiconductor Korea BYW32(Z) - - - BYW36(Z) VOLTAGE RANGE: 200---600 V CURRENT: 2.0 A FAST RECOVERY RECTIFIERS FEATURES Low cost Diffused junction DO - 15B Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO-15B,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Dimensions in millimeters Weight: 0.024ounces,0.68 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BYW 32 BYW 33 BYW 34 BYW 35 BYW 36 UNITS Maximum recurrent peak reverse voltage VRRM 200 300 400 500 600 V Maximum RMS voltage VRMS 140 210 280 350 420 V Maximum DC blocking voltage VDC 200 300 400 500 600 V Maximum average forw ard rectified current 9.5mm lead length, @TA =75 IF(AV) 2.0 A IFSM 40.0 A VF 1.2 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 2.0 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA=150 IR 5.0 50.0 A Maximum reverse recovery time (Note1) t rr 200 ns Typical junction capacitance (Note2) CJ 22 pF Typical thermal resistance (Note3) Rθ JA 35 TJ - 55---- +150 TSTG - 55---- +150 Operating junction temperature range Storage temperature range ／Ｗ NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea BYW32(Z) - - - BYW36(Z) 2.0 1.5 1.0 Single Phave Half Wave 60Hz Resistive of Inductive Load 0.5 0 25 50 75 100 125 150 175 FIG.2 --PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES FIG.1 --FORWARD DERATING CURVE 50 T J = 25℃ 8.3 m s S ingle H alf S ine-W ave 40 30 20 10 0 1 AMBIENT TEMPERATURE, NUMBER OF CYCLES AT 60 Hz FIG.4--TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, AMPERES 100 10 TJ=25 Pulse Width=300µS 4 2 1.0 0.4 AMPERES INSTANTANEOUS FORWARD CURRENT FIG.3 --TYPICAL FORWARD CHARACTERISTICS 0.2 0.1 0.06 0.04 0.02 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 10 TJ=125 1 TJ=75 0.1 TJ=25 0.01 0 20 40 60 80 100 FIG.6-- TYPICAL RECTIFICATION EFFICIENCY 1.2 RECTIFICATION EFFICIENCY 40 JUNCTION CAPACITANCE, pF 20 PERCENT OF RATED PEAK REVERSE VOLTAGE, % FIG.5-- TYPICAL JUNCTION CAPACITANCE T J =25 f=1.0MHz 20 1 100 10 1 4 10 REVERSE VOLTAGE,VOLTS 100 BYW32 THRU BYW36 SERIES FAST RECOVERY 1.0 0.8 0.6 STANDARD RECOVERY 0.4 0.2 0 1 10 100 1000 FREOUENCY, KHz www.diode.kr