PHILIPS BYV10-600P Ultrafast power diode Datasheet

TO
-22
0
AC
BYV10-600P
Ultrafast power diode
3 January 2014
Product data sheet
1. General description
Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package.
2. Features and benefits
•
•
•
•
•
Fast switching
Low leakage current
Low forward voltage drop
Low thermal resistance
Soft recovery characteristic
3. Applications
•
•
High frequency switched-mode power supplies
Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
Conditions
Min
Typ
Max
Unit
-
-
600
V
-
-
10
A
IF = 10 A; Tj = 150 °C; Fig. 6
-
-
1.6
V
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
-
20
-
ns
δ = 0.5 ; Tmb ≤ 109 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
Static characteristics
VF
forward voltage
Dynamic characteristics
trr
reverse recovery time
Tj = 25 °C; Fig. 7
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BYV10-600P
NXP Semiconductors
Ultrafast power diode
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
K
Simplified outline
cathode
Graphic symbol
mb
K
A
001aaa020
2
A
anode
mb
mb
mounting base; connected to
cathode
1
2
TO-220AC (SOD59)
6. Ordering information
Table 3.
Ordering information
Type number
Package
BYV10-600P
Name
Description
Version
TO-220AC
plastic single-ended package; heatsink mounted; 1 mounting
hole; 2-lead TO-220AC
SOD59
7. Marking
Table 4.
Marking codes
Type number
Marking code
BYV10-600P
BYV10-600P
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VRRM
Conditions
Min
Max
Unit
repetitive peak reverse voltage
-
600
V
VRWM
crest working reverse voltage
-
600
V
VR
reverse voltage
DC
-
600
V
IF(AV)
average forward current
δ = 0.5 ; Tmb ≤ 109 °C; square-wave
-
10
A
-
20
A
pulse; Fig. 1; Fig. 2; Fig. 3
IFRM
repetitive peak forward current
δ = 0.5 ; tp = 25 µs; Tmb ≤ 109 °C;
square-wave pulse
BYV10-600P
Product data sheet
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Ultrafast power diode
Symbol
Parameter
Conditions
Min
Max
Unit
IFSM
non-repetitive peak forward
current
tp = 10 ms; Tj(init) = 25 °C; sine-wave
-
80
A
-
88
A
pulse; Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave
pulse; Fig. 4
Tstg
storage temperature
-65
175
°C
Tj
junction temperature
-
175
°C
aaa-008948
25
Ptot
(W)
aaa-008977
20
δ=1
a = 1.57
Ptot
(W)
20
0.5
1.9
2.2
15
2.8
0.2
15
4.0
0.1
10
10
5
5
0
Fig. 1.
0
5
10
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig. 2.
aaa-008978
15
IF(AV)
(A)
109 °C
102
100
Product data sheet
7.5
IF(AV) (A)
10
aaa-008979
IF
10
10-5
150
200
Tmb (°C)
Forward current as a function of mounting base Fig. 4.
temperature; maximum values
BYV10-600P
5
IFSM
(A)
5
50
2.5
104
103
0
0
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
10
0
-50
Fig. 3.
IF(AV) (A)
0
15
t
tp
Tj(init) = 25 °C max
10-4
10-3
tp (s)
10-2
Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;
maximum values
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3 January 2014
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BYV10-600P
NXP Semiconductors
Ultrafast power diode
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
-
3.5
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
-
60
-
K/W
aaa-008983
10
Zth(j-mb)
(K/W)
1
10-1
δ = 0.5
δ = 0.3
10-2
δ = 0.1
P
δ = 0.05
δ = 0.02
10-3
δ = 0.01
single pulse
10-4
10-6
Fig. 5.
δ=
10-5
10-4
10-3
tp
10-2
10-1
tp
T
t
T
1
10
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF = 10 A; Tj = 25 °C; Fig. 6
-
1.5
2
V
IF = 10 A; Tj = 150 °C; Fig. 6
-
-
1.6
V
VR = 600 V; Tj = 25 °C
-
-
10
µA
VR = 500 V; Tj = 150 °C
-
-
250
µA
IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;
-
35
50
ns
-
20
-
ns
Static characteristics
VF
IR
forward voltage
reverse current
Dynamic characteristics
trr
reverse recovery time
Tj = 25 °C; Fig. 7
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; Fig. 7
BYV10-600P
Product data sheet
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BYV10-600P
NXP Semiconductors
Ultrafast power diode
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
-
40
-
ns
µs; Tj = 25 °C; Fig. 7
aaa-008980
20
IF
IF
(A)
dlF
dt
15
trr
10
(1)
(2)
time
(3)
25 %
Qr
5
IR
0
Fig. 6.
100 %
IRM
003aac562
0
0.5
1
1.5
2
VF (V)
2.5
Fig. 7.
Reverse recovery definitions; ramp recovery
Forward current as a function of forward
voltage
BYV10-600P
Product data sheet
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NXP Semiconductors
Ultrafast power diode
11. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC
SOD59
E
A
A1
P
q
D1
D
H
Q
b1
L
1
2
c
b
e
0
5
Dimensions
Unit
mm
max
nom
min
10 mm
scale
A
A1
b
b1(1)
c
D
D1
E
4.7
1.40 0.95
1.7
0.65 15.8
6.8 10.30
4.3
1.15 0.70
1.3
0.45 15.6
6.4
9.65
e
H
5.08
(REF)
L
P
Q
q
16.25 15.0 3.80
2.6
2.9
15.70 12.5 3.65
2.2
2.7
Note
1. Protruded dambar are included in the dimension.
Outline
version
SOD59
Fig. 8.
sod059_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
09-08-25
12-11-27
2-lead TO-220AC
Package outline TO-220AC (SOD59)
BYV10-600P
Product data sheet
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BYV10-600P
NXP Semiconductors
Ultrafast power diode
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Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
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BYV10-600P
Product data sheet
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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13. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................2
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 4
11
Package outline ..................................................... 6
12
12.1
12.2
12.3
12.4
Legal information ...................................................7
Data sheet status ................................................. 7
Definitions .............................................................7
Disclaimers ...........................................................7
Trademarks .......................................................... 8
© NXP N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 3 January 2014
BYV10-600P
Product data sheet
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3 January 2014
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