BC637, BC639, BC639−16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector - Emitter Voltage Value VCEO BC637 BC639 Collector - Base Voltage Vdc 60 80 1 EMITTER VCBO BC637 BC639 Emitter - Base Voltage Vdc 60 80 VEBO 5.0 Vdc Collector Current − Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 800 12 mW mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range 3 BASE Unit TO−92 CASE 29 STYLE 14 12 1 3 STRAIGHT LEAD BULK PACK THERMAL CHARACTERISTICS 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAMS Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. BC 63x AYWW G G BC63 9−16 AYWW G G x = 7 or 9 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 0 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: BC637/D BC637, BC639, BC639−16 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 60 80 − − − − 120 − − 60 80 − − − − 5.0 − − Vdc − − − − 100 10 nAdc mAdc 25 40 40 100 25 − − − − − − 160 160 250 − − − 0.5 − − 1.0 − 200 − − 7.0 − − 50 − OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0) V(BR)CEO BC637 BC639 Collector − Emitter Zero−Gate Breakdown Voltage(Note 1) (IC = 100 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Vdc V(BR)CES BC639−16 Vdc V(BR)CBO BC637 BC639 Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TA = 125°C) Vdc ICBO ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 5.0 mAdc, VCE = 2.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) hFE BC637 BC639 BC639−16ZLT1 (IC = 500 mA, VCE = 2.0 V) Collector − Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base − Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib MHz pF pF 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%. ORDERING INFORMATION Package Shipping† BC637G TO−92 (Pb−Free) 5000 Units / Bulk BC639G TO−92 (Pb−Free) 5000 Units / Bulk BC639RL1G TO−92 (Pb−Free) 2000 / Tape & Reel BC639ZL1G TO−92 (Pb−Free) 2000 / Ammo Box BC639−16ZL1G TO−92 (Pb−Free) 2000 / Ammo Box Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 BC637, BC639, BC639−16 500 1000 VCE = 2 V SOA = 1S 200 PD TA 25°C 100 50 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 500 PD TC 25°C 20 10 5 1 BC635 BC637 BC639 PD TA 25°C PD TC 25°C 2 1 2 3 4 5 7 10 20 30 40 50 70 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 200 100 50 20 100 1 3 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000 Figure 2. DC Current Gain 500 1 300 V, VOLTAGE (VOLTS) 0.8 VCE = 2 V 100 50 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 20 1 10 100 IC, COLLECTOR CURRENT (mA) 0 1000 1 Figure 3. Current−Gain — Bandwidth Product 10 100 IC, COLLECTOR CURRENT (mA) Figure 4. “Saturation” and “On” Voltages −0.2 θV, TEMPERATURE COEFFICIENTS (mV/°C) f, T CURRENT−GAIN BANDWIDTH PRODUCT (MHz) Figure 1. Active Region Safe Operating Area 5 −1.0 VCE = 2 VOLTS DT = 0°C to +100°C −1.6 −2.2 qV for VBE 1 3 5 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 Figure 5. Temperature Coefficients http://onsemi.com 3 1000 1000 BC637, BC639, BC639−16 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N A R BENT LEAD TAPE & REEL AMMO PACK B P NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. T SEATING PLANE K D X X G J V 1 C SECTION X−X DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− N STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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