UMS CHA7115-99F00 X-band high power amplifier Datasheet

CHA7115-99F
RoHS COMPLIANT
X-band High Power Amplifier
GaAs Monolithic Microwave IC
Description
Vg3 Vd3
The CHA7115 is a monolithic three-stage
GaAs high power amplifier designed for
X-band applications.
The HPA provides typically 8W output power
associated to 36% power added efficiency at
4dBcomp and a high robustness on
mismatch load.
This device is manufactured using 0.25µm
Power pHEMT process, including, via holes
through the substrate and air bridges.
It is available in chip form.
Main Features
IN
OUT
Vd2
Vd1
Vg3 Vd3
44
Pout (dBm) & PAE (%) & Gain (dB)







Vg2 Vd2
Vg1
0.25µm Power pHEMT Technology
Frequency band: 8.5 – 11.5GHz
Output power : 39dBm @ 4dBcomp
High linear gain: > 27dB
High PAE : 37% @ 4dBcomp
Quiescent bias point: Vd=8V, Id=2.2A
Chip size: 4.59 x 3.31 x 0.07mm
42
Pout @ 4dBc
40
38
36
34
PAE @ 4dBc
32
30
28
Linear Gain
26
24
Pulse : 25µs 10%
22
8
8.5
9
9.5
10
10.5
11
11.5
Frequency (GHz)
Main Characteristics
Vd = 8V, Id (Quiescent) = 2.2A, Drain Pulse width = 25µs, Duty cycle = 10%
Symbol
Parameter
Min
Typ
Fop
PAE_4dB
P_4dB
G
Operating frequency range
8.5
Max
Unit
11.5
GHz
Power added efficiency @4dBcomp @ 20°C
37
%
Output power @ 4dBcomp @ 20°C
39
dBm
27.5
dB
Small signal gain @ 20°C
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHA71151069 - 10 Mar 11
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
12
X-band High Power Amplifier
CHA7115-99F
Electrical Characteristics on wafer
Tamb = 20°C, Vd = 8V, Id (Quiescent) = 2.2A, Drain Pulse width = 25µs, Duty cycle = 10%
Symbol
Fop
G
RLin
RLout
P_4dBc
PAE_4dB
Id_4dB
Vd1, Vd2, Vd3
Id
Vg
Parameter
Operating frequency
Small signal gain
Input Return Loss
Output Return Loss
Output power @ 4dBcomp (2)
Power Added Efficiency @ 4dBcomp
Supply drain current @ 4dBcomp
Drain supply voltage (2)
Supply quiescent current (1)
Gate supply voltage
Min
8.5
Typ
Max
11.5
27.5
10
12
39
37
2.6
8
2.2
-1.4
Unit
GHz
dB
dB
dB
dBm
%
A
V
A
V
(1) Parameter can be adjusted by tuning of Vg.
(2) 0.5V variation on Vd leads to around 0.4dB variation of the output power (impact on
robustness see Maximum ratings).
Absolute Maximum Ratings (1)
Tamb = 20°C
Symbol
Cmp
Vd
Id
Id_sat
Vg
Tj
Tstg
Top
(1)
(2)
(3)
Parameter
Compression level (2)
Supply voltage (3)
Supply quiescent current
Supply current in saturation
Supply voltage
Maximum junction temperature
Storage temperature range
Operating temperature range
Values
6
10
2.8
4
-0.8
175
-55 to +150
-40 to +80
Unit
dB
V
A
A
V
°C
°C
°C
Operation of this device above anyone of these parameters may cause permanent
damage.
For higher compression the level limit can be increased by decreasing the voltage
Vd using the rate 0.5V/dBc.
Without RF input power.
Ref DSCHA71151069 - 10 Mar 11
2/6
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA7115-99F
Typical measured characteristics
Measurements on Wafer:
Vd = 8V, Id (Quiescent) = 2.2A, Drain Pulse width = 25µs, Duty cycle = 10%
Linear gain versus frequency
34
33
32
31
Linear gain (dB)
30
29
28
27
26
25
24
23
22
21
20
8
8.5
9
9.5
10
10.5
11
11.5
12
11.5
12
Frequency (GHz)
Output Power @ 4dBcomp versus frequency
42.0
41.5
41.0
40.5
Pout (dBm)
40.0
39.5
39.0
38.5
38.0
37.5
37.0
36.5
36.0
35.5
35.0
8
8.5
9
9.5
10
10.5
11
Frequency (GHz)
Ref : DSCHA71151069 - 10 Mar 11
3/6
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA7115-99F
Power added efficiency @ 4dBcomp versus frequency
46
44
42
40
PAE (%)
38
36
34
32
30
28
26
24
8
8.5
9
9.5
10
10.5
11
11.5
12
11.5
12
Frequency (GHz)
Drain Current @ 4dBcomp versus frequency
4
3.5
3
Id (A)
2.5
2
1.5
1
0.5
0
8
8.5
9
9.5
10
10.5
11
Frequency (GHz)
Ref DSCHA71151069 - 10 Mar 11
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Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA7115-99F
Chip Mechanical Data and Pin references
2 3
4
5 6
7
8
9 10 11 12
13
14
15
1
16
27 26 25 24
23 22 21 20
19
18
17
Chip width and length are given with a tolerance of +/- 35µm
Chip thickness
= 70µm +/- 10µm
RF pads (1, 16)
= 118 x 196µm²
DC pads wide (14, 18)
= 186 x 100µm²
DC pads (others, 2 to 27) = 100 x 100µm²
Pin number
1
2, 5, 6, 7, 8, 11, 12, 20, 24, 25
3, 21
4, 9, 13, 15, 17, 19, 23, 27
10, 14, 18, 22,26
16
Ref : DSCHA71151069 - 10 Mar 11
Pin name
IN
G
GR
GND
VD
OUT
5/6
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Description
Input RF
NC
Gate supply voltage
Ground (NC)
Drain supply voltage
Output RF
Specifications subject to change without notice
X-band High Power Amplifier
CHA7115-99F
Bonding recommendations
Port
Connection
External capacitor
Inductance (Lbonding) = 0.3nH
2 gold wires with diameter of 25µm (550µm max)
Inductance (Lbonding) = 0.3nH
2 gold wires with diameter of 25µm (550µm max)
IN
OUT
Vg
Vd
Inductance
1nH
C1 ~ 100pF, C2 ~ 10nF
Inductance
1nH
C1 ~ 100pF
Assembly recommendations in test fixture
Vg
Vd
Vg
Vd
C1=100pF
C2=10nF
Non capacitive pad
Ordering Information
Chip form
:
CHA7115-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorized for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref DSCHA71151069 - 10 Mar 11
6/6
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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