CHA7115-99F RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description Vg3 Vd3 The CHA7115 is a monolithic three-stage GaAs high power amplifier designed for X-band applications. The HPA provides typically 8W output power associated to 36% power added efficiency at 4dBcomp and a high robustness on mismatch load. This device is manufactured using 0.25µm Power pHEMT process, including, via holes through the substrate and air bridges. It is available in chip form. Main Features IN OUT Vd2 Vd1 Vg3 Vd3 44 Pout (dBm) & PAE (%) & Gain (dB) Vg2 Vd2 Vg1 0.25µm Power pHEMT Technology Frequency band: 8.5 – 11.5GHz Output power : 39dBm @ 4dBcomp High linear gain: > 27dB High PAE : 37% @ 4dBcomp Quiescent bias point: Vd=8V, Id=2.2A Chip size: 4.59 x 3.31 x 0.07mm 42 Pout @ 4dBc 40 38 36 34 PAE @ 4dBc 32 30 28 Linear Gain 26 24 Pulse : 25µs 10% 22 8 8.5 9 9.5 10 10.5 11 11.5 Frequency (GHz) Main Characteristics Vd = 8V, Id (Quiescent) = 2.2A, Drain Pulse width = 25µs, Duty cycle = 10% Symbol Parameter Min Typ Fop PAE_4dB P_4dB G Operating frequency range 8.5 Max Unit 11.5 GHz Power added efficiency @4dBcomp @ 20°C 37 % Output power @ 4dBcomp @ 20°C 39 dBm 27.5 dB Small signal gain @ 20°C ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions! Ref : DSCHA71151069 - 10 Mar 11 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12 X-band High Power Amplifier CHA7115-99F Electrical Characteristics on wafer Tamb = 20°C, Vd = 8V, Id (Quiescent) = 2.2A, Drain Pulse width = 25µs, Duty cycle = 10% Symbol Fop G RLin RLout P_4dBc PAE_4dB Id_4dB Vd1, Vd2, Vd3 Id Vg Parameter Operating frequency Small signal gain Input Return Loss Output Return Loss Output power @ 4dBcomp (2) Power Added Efficiency @ 4dBcomp Supply drain current @ 4dBcomp Drain supply voltage (2) Supply quiescent current (1) Gate supply voltage Min 8.5 Typ Max 11.5 27.5 10 12 39 37 2.6 8 2.2 -1.4 Unit GHz dB dB dB dBm % A V A V (1) Parameter can be adjusted by tuning of Vg. (2) 0.5V variation on Vd leads to around 0.4dB variation of the output power (impact on robustness see Maximum ratings). Absolute Maximum Ratings (1) Tamb = 20°C Symbol Cmp Vd Id Id_sat Vg Tj Tstg Top (1) (2) (3) Parameter Compression level (2) Supply voltage (3) Supply quiescent current Supply current in saturation Supply voltage Maximum junction temperature Storage temperature range Operating temperature range Values 6 10 2.8 4 -0.8 175 -55 to +150 -40 to +80 Unit dB V A A V °C °C °C Operation of this device above anyone of these parameters may cause permanent damage. For higher compression the level limit can be increased by decreasing the voltage Vd using the rate 0.5V/dBc. Without RF input power. Ref DSCHA71151069 - 10 Mar 11 2/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA7115-99F Typical measured characteristics Measurements on Wafer: Vd = 8V, Id (Quiescent) = 2.2A, Drain Pulse width = 25µs, Duty cycle = 10% Linear gain versus frequency 34 33 32 31 Linear gain (dB) 30 29 28 27 26 25 24 23 22 21 20 8 8.5 9 9.5 10 10.5 11 11.5 12 11.5 12 Frequency (GHz) Output Power @ 4dBcomp versus frequency 42.0 41.5 41.0 40.5 Pout (dBm) 40.0 39.5 39.0 38.5 38.0 37.5 37.0 36.5 36.0 35.5 35.0 8 8.5 9 9.5 10 10.5 11 Frequency (GHz) Ref : DSCHA71151069 - 10 Mar 11 3/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA7115-99F Power added efficiency @ 4dBcomp versus frequency 46 44 42 40 PAE (%) 38 36 34 32 30 28 26 24 8 8.5 9 9.5 10 10.5 11 11.5 12 11.5 12 Frequency (GHz) Drain Current @ 4dBcomp versus frequency 4 3.5 3 Id (A) 2.5 2 1.5 1 0.5 0 8 8.5 9 9.5 10 10.5 11 Frequency (GHz) Ref DSCHA71151069 - 10 Mar 11 4/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA7115-99F Chip Mechanical Data and Pin references 2 3 4 5 6 7 8 9 10 11 12 13 14 15 1 16 27 26 25 24 23 22 21 20 19 18 17 Chip width and length are given with a tolerance of +/- 35µm Chip thickness = 70µm +/- 10µm RF pads (1, 16) = 118 x 196µm² DC pads wide (14, 18) = 186 x 100µm² DC pads (others, 2 to 27) = 100 x 100µm² Pin number 1 2, 5, 6, 7, 8, 11, 12, 20, 24, 25 3, 21 4, 9, 13, 15, 17, 19, 23, 27 10, 14, 18, 22,26 16 Ref : DSCHA71151069 - 10 Mar 11 Pin name IN G GR GND VD OUT 5/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Description Input RF NC Gate supply voltage Ground (NC) Drain supply voltage Output RF Specifications subject to change without notice X-band High Power Amplifier CHA7115-99F Bonding recommendations Port Connection External capacitor Inductance (Lbonding) = 0.3nH 2 gold wires with diameter of 25µm (550µm max) Inductance (Lbonding) = 0.3nH 2 gold wires with diameter of 25µm (550µm max) IN OUT Vg Vd Inductance 1nH C1 ~ 100pF, C2 ~ 10nF Inductance 1nH C1 ~ 100pF Assembly recommendations in test fixture Vg Vd Vg Vd C1=100pF C2=10nF Non capacitive pad Ordering Information Chip form : CHA7115-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorized for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref DSCHA71151069 - 10 Mar 11 6/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice