April 1998 FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed. 33 A, 30 V. RDS(ON) = 0.022 Ω @ VGS=10 V RDS(ON) = 0.036 Ω @ VGS=4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating. _________________________________________________________________________________ D G S Absolute Maximum Ratings T C = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage FDP603AL 30 V VGSS Gate-Source Voltage - Continuous ±20 V ID Drain Current 33 A - Continuous - Pulsed PD (Note 1) Total Power Dissipation @ TC = 25°C Derate above 25°C TJ,TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FDB603AL Units 100 50 W 0.33 W/°C -65 to 175 °C 275 °C 3 °C/W 62.5 °C/W THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient © 1998 Fairchild Semiconductor Corporation FDP603AL Rev.D Electrical Characteristics Symbol T C = 25°C unless otherwise noted) Parameter Conditions Min Typ Max Unit 100 mJ 12 A DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS Single Pulse Drain-Source Avalanche Energy IAR Maximum Drain-Source Avalanche Current VDD = 15 V, ID = 12 A OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient VGS = 0 V, ID = 250 µA 30 o V mV/oC 32 ID = 250 µA, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10 µA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th)/∆TJ Gate Threshold Voltage Temp.Coefficient ID = 250 µA, Referenced to 25 oC 1 RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 25 A 1.8 3 V mV/oC -4.5 TJ =125 °C VGS = 4.5 V, ID = 10 A 0.018 0.022 0.026 0.035 0.03 0.036 Ω ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 60 A ID(on) On-State Drain Current VGS = 4.5 V, VDS = 10 V 15 A gFS Forward Transconductance VDS = 10 V, ID = 25 A 24 S VDS = 15 V, VGS = 0 V, f = 1.0 MHz 670 pF 345 pF 95 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 1) tD(on) Turn - On Delay Time VDD = 15 V, ID = 25 A tr Turn - On Rise Time VGS = 10 V, RGEN = 24 Ω tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 10 V ID = 25 A, VGS = 10 V 8 16 nS 102 140 nS 20 36 nS 80 115 nS 19 26 nC 3.5 nC 5.5 nC DRAIN-SOURCE DIODE CHARACTERISTICS IS Maximum Continuos Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 25 A (Note 1) TJ = 125°C 25 A 1 1.3 V 0.85 1.1 Note 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. FDP603AL Rev.D Typical Electrical Characteristics 3 V GS =10V 8.0 7.0 6.0 R DS(ON) , NORMALIZED 60 5.0 40 4.5 4.0 20 3.0 0 0 1 2 3 4 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 80 V GS 7.0 8.0 10 1 0 20 40 I D , DRAIN CURRENT (A) 60 80 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.06 ID= 12.5A ID = 25A V GS = 10V 1.6 R DS(ON) , ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED 6.0 0.5 5 1.8 DRAIN-SOURCE ON-RESISTANCE 5.0 1.5 Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 0.05 0.04 TJ = 125°C 0.03 25°C 0.02 0.01 TJ , JUNCTION TEMPERATURE (°C) 3 4 5 6 7 8 9 10 VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 I S , REVERSE DRAIN CURRENT (A) 30 V DS = 10V ID , DRAIN CURRENT (A) 4.5 2 VDS , DRAIN-SOURCE VOLTAGE (V) 25 20 15 10 T = 125°C J 25°C 5 -55°C 0 = 4.0V 2.5 1 2 3 4 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 VGS = 0V TJ = 125°C 1 25°C 0.1 -55°C 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 6 . Body Diode Forward Voltage Variation with Source Current and Temperature. FDP603AL Rev.D Typical Electrical Characteristics (continued) 2000 V GS , GATE-SOURCE VOLTAGE (V) 10 I D = 25A VDS = 5.0V 10V 1000 CAPACITANCE (pF) 8 20V 6 4 Ciss 500 Coss 200 2 f = 1 MHz VGS = 0V 100 0 0 5 10 15 60 0.1 20 Q g , GATE CHARGE (nC) 0.3 1 4 10 30 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 200 2000 100 50 R N) (O DS 10 0µ s 10 µs it Lim 1m s 20 10m 100 s m DC s 10 5 VGS = 10V SINGLE PULSE RθJC = 3 o C/W TA = 25 °C 2 1 0.5 0.5 SINGLE PULSE R θJC =3.0° C/W TC = 25°C 1600 POWER (W) I D , DRAIN CURRENT (A) Crss 1200 800 400 1 3 5 10 20 30 0 0.01 50 V DS , DRAIN-SOURCE VOLTAGE (V)) 0.1 1 10 100 1000 SINGLE PULSE TIME (ms) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.5 0.3 R θJC (t) = r(t) * RθJC R θJC = 3.0 °C/W 0.2 0.2 0.1 0.1 P(pk) 0.05 0.05 t1 0.02 0.03 0.02 Single Pulse 0.01 0.01 0.05 t2 TJ - T C = P * R θ JC (t) Duty Cycle, D = t 1 /t2 0.01 0.1 0.5 1 5 t1 , TIME (ms) 10 50 100 500 1000 Figure 11. Transient Thermal Response Curve. FDP603AL Rev.D