Infineon BAT66 Silicon schottky diode Datasheet

BAT66...
Silicon Schottky Diode
Power rectifier diode
For low-loss, fast-recovery rectification,
meter protection, bias isolation and
clamping purpose
BAT66-05
4
D 1
1
D 2
2
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BAT66-05
Package
SOT223
Configuration
common cathode
Marking
BAT66-05
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
VR
30
V
Forward current
IF
2
A
Surge forward current, (t 10ms)
IFSM
10
Average forward current (50/60Hz, sinus)
IFAV
1
Total power dissipation
Ptot
1.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
TS 126°C
1For
-55 ... 150
Value
Unit
20
K/W
calculation of RthJA please refer to Application Note Thermal Resistance
1
Feb-14-2003
BAT66...
Electrical Characteristics at T A = 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ. max.
DC Characteristics
Reverse current
IR
µA
VR = 25 V
-
-
10
VR = 25 V, TA = 85 °C
-
-
1000
Forward voltage
V
VF
I F = 10 mA
-
0.28
0.35
I F = 100 mA
-
0.35
-
IF = 1 A
-
0.47
0.6
-
30
40
AC Characteristics
Diode capacitance
CT
Unit
pF
VR = 10 V, f = 1 MHz
2
Feb-14-2003
BAT66...
Reverse current IR = (VR)
TA = Parameter
BAT 66-05
10 4
ΙR
Forward current IF = (VF)
EHB00063
µA
ΙR
TA = 125 ˚C
10 3
10 3
BAT 66-05
EHB00062
mA
10 2
85 ˚C
10 2
TA = 25 ˚C
85 ˚C
10 1
10 1
10
10 0
25 ˚C
0
10 -1
10 -1
0
10
20
V
30
VR
0
0.25
0.5
V
0.75
VF
Forward current IF = (TS )
2400
mA
IF
1600
1200
800
400
0
0
15
30
45
60
75
90 105 120 °C
150
TS
3
Feb-14-2003
Similar pages