isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU931RPFI DESCRIPTION ·High Voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 15 A ICM Collector Current-peak 30 A IB Base Current 1 A IBM Base Current-peak 5 A PC Collector Power Dissipation @TC=25℃ 60 W Tj Junction Temperature 150 ℃ -40~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU931RPFI ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0; L= 10mH VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA 1.6 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.8 V V CE(sat)-3 Collector-Emitter Saturation Voltage IC= 10 A; IB= 250mA 1.8 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 8 A; IB= 100mA 2.2 V V BE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 250mA 2.2 V ICES Collector Cutoff Current VCE= 450V;VBE= 0 VCE= 450V;VBE= 0;Tj= 125℃ 1.0 5.0 mA ICEO Collector Cutoff Current VCE= 400V;IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 mA hFE DC Current Gain IC= 5A; VCE= 10V VECF C-E Diode Forward Voltage IF= 10A 2.8 V isc Website：www.iscsemi.cn CONDITIONS MIN TYP. MAX 400 B B UNIT V 300