AP6980GN2-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Size & Lower Profile
▼ Halogen Free & RoHS Compliant Product
G
BVDSS
30V
RDS(ON)
14mΩ
ID
10.3A
S
Top view
Description
D
AP6980 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
D
D
D
S
S
D
S
D
D
G
DFN 2x2
D
D
G
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
30
V
+20
V
3
10.3
A
3
8.2
A
25
A
2.4
W
Continuous Drain Current @ VGS=10V
Continuous Drain Current @ VGS=10V
1
Pulsed Drain Current
IDM
Rating
3
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Value
Unit
Maximum Thermal Resistance, Junction-ambient 3
52
℃/W
Data and specifications subject to change without notice
1
201105221
AP6980GN2-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=8A
-
11.2
14
mΩ
VGS=4.5V, ID=5A
-
18.3
24
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
1.7
3
V
gfs
Forward Transconductance
VDS=10V, ID=8A
-
16
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=8A
-
9.5
15.2
nC
Qgs
Gate-Source Charge
VDS=15V
-
3.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
9
-
ns
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
19
-
ns
tf
Fall Time
VGS=10V
-
4.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
1100 1760
pF
Coss
Output Capacitance
VDS=15V
-
130
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
105
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
2.4
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=2A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=8A, VGS=0V,
-
17
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t < 10s ; 165oC/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6980GN2-HF
40
40
o
30
ID , Drain Current (A)
ID , Drain Current (A)
T A = 150 o C
10V
7.0V
6.0V
5.0V
V G = 4.0V
T A = 25 C
20
10
30
20
10
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
24
2.0
ID=8A
V G = 10 V
Normalized RDS(ON)
ID=5A
T A =25 ℃
20
RDS(ON) (mΩ)
10V
7.0V
6.0V
5.0V
V G = 4.0V
16
12
1.6
1.2
0.8
8
0.4
2
4
6
8
10
-50
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
8
I D =250uA
1.6
IS(A)
Normalized VGS(th)
6
4
T j =150 o C
T j =25 o C
1.2
0.8
2
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6980GN2-HF
f=1.0MHz
1600
I D = 8A
V DS =15V
8
1200
C iss
C (pF)
VGS , Gate to Source Voltage (V)
10
6
800
4
400
2
C oss
C rss
0
0
0
4
8
12
16
1
20
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this
area limited by
RDS(ON)
10
ID (A)
1ms
1
10ms
100ms
0.1
1s
DC
o
T A =25 C
Single Pulse
Normalized Thermal Response (Rthja)
Duty factor=0.5
100us
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 165℃/W
Single Pulse
0.001
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
12
V DS =5V
ID , Drain Current (A)
ID , Drain Current (A)
10
30
20
T j =150 o C
8
6
4
10
T j =25 o C
2
o
T j = -40 C
0
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
o
T A , Ambient Temperature ( C )
Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
4