AP9412GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
30V
RDS(ON)
6mΩ
ID
G
73A
S
Description
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low □
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9412GJ) are available for low-profile applications.
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current
73
A
ID@TC=100℃
Continuous Drain Current
52
A
250
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
53.6
W
Linear Derating Factor
0.36
W/℃
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
2.8
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data & specifications subject to change without notice
200509072-1/4
AP9412GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=250uA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=40A
-
-
6
mΩ
VGS=4.5V, ID=30A
-
-
8
mΩ
VDS=VGS, ID=250uA
1
-
2.5
V
VDS=10V, ID=30A
-
30
-
S
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
VGS=0V, ID=250uA
Min.
IDSS
Drain-Source Leakage Current (T j=25 C)
VDS=30V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=40A
-
26
42
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
4.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
16
-
nC
VDS=15V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
36
-
ns
tf
Fall Time
RD=15Ω
-
20
-
ns
Ciss
Input Capacitance
VGS=0V
-
2020 3230
pF
Coss
Output Capacitance
VDS=25V
-
450
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
295
-
pF
Rg
Gate Resistance
f=1.0MHz
-
0.9
1.35
Ω
Min.
Typ.
Max. Units
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward On Voltage
IS=40A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time2
IS=14A, VGS=0V,
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
29
-
nC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP9412GH/J
250
100
10V
7.0 V
5.0V
4.5 V
ID , Drain Current (A)
200
80
150
V G = 3.0 V
100
50
V G =3.0V
60
40
20
0
0
0.0
1.0
2.0
3.0
4.0
5.0
0.0
V DS , Drain-to-Source Voltage (V)
4.0
6.0
8.0
Fig 2. Typical Output Characteristics
2.0
12
I D =30A
I D =40A
V G =10V
o
T C =25 C
1.6
Normalized RDS(ON)
10
RDS(ON) (mΩ)
2.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
8
1.2
0.8
6
0.4
4
0
2
4
6
8
-50
10
0
Fig 3. On-Resistance v.s. Gate Voltage
100
150
200
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
30
1.2
Normalized VGS(th) (V)
40
T j =175 o C
50
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
IS(A)
10V
7 .0V
5.0V
4.5 V
T C =175 o C
ID , Drain Current (A)
o
T C =25 C
o
T j =25 C
20
10
0
0.8
0.4
0.0
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
200
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9412GH/J
16
f=1.0MHz
10000
12
V DS =16V
V DS =20V
V DS =24V
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D =40A
8
1000
C oss
C rss
4
100
0
0
15
30
45
1
60
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
100
ID (A)
100us
10
1ms
1
10ms
100ms
DC
o
T C =25 C
Single Pulse
0
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
V DS =5V
VG
100
ID , Drain Current (A)
o
o
T j =25 C
T j =175 C
QG
80
4.5V
QGS
60
QGD
40
20
Charge
Q
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4