EIC BZX55C8V2 Silicon zener diode Datasheet

BZX55C2V0 ~ BZX55C100
SILICON ZENER DIODES
DO - 35
VZ : 2.0 - 100 Volts
PD : 500 mW
1.00 (25.4)
min.
0.079(2.0 )max.
FEATURES :
0.150 (3.8)
max.
* Complete 2.0 to 100 Volts
* High surge current capability
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
1.00 (25.4)
min.
0.020 (0.52)max.
Dimensions in inches and ( millimeters )
MECHANICAL DATA
* Case : Molded glass
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end. When operated in zener mode,
cathode will be positive with respect to anode
* Mounting position : Any
* Weight : 0.13 gram (approx.)
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified
Rating
Symbol
Value
Unit
Power Dissipation (Note1)
PD
500
mW
Maximum Forward Voltage at IF =100 mA
VF
1.0
V
RθJA
300
°C/W
Junction Temperature Range
Tj
- 65 to + 200
°C
Storage Temperature Range
Ts
- 65 to + 200
°C
Maximum Thermal Resistance Junction to Ambient Air (Note1)
Note : (1) Valid provided that leads at a distance of 3/8” from case are kept at ambient temperature.
Page 1 of 2
Rev. 05 : June 25, 2005
ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified
Zener Voltage
Maximum Zener
Maximum Reverse
Temp. coefficient Admissible
VZ @ IZT
Impedance
Leakage Current, IR
of Zener Voltage
Zener
(µA)
at VR
(V)
TKVZ
(% / K)
Current(2)
IZM (mA)
200
1.0
-0.09...-0.06
175
100
1.0
-0.09...-0.06
160
50
100
1.0
-0.09...-0.06
145
1.0
10
50
1.0
-0.09...-0.06
135
600
1.0
4.0
40
1.0
-0.08...-0.05
125
85
600
1.0
2.0
40
1.0
-0.08...-0.05
115
5.0
85
600
1.0
2.0
40
1.0
-0.08...-0.05
105
4.1
5.0
85
600
1.0
2.0
40
1.0
-0.08...-0.05
95
4.0
4.6
5.0
75
600
1.0
1.0
20
1.0
-0.06...-0.03
90
4.7
4.4
5.0
5.0
60
600
1.0
0.5
10
1.0
-0.05...+0.02
85
BZX55C5V1
5.1
4.8
5.4
5.0
35
550
1.0
0.1
2.0
1.0
-0.02...+0.02
80
BZX55C5V6
5.6
5.2
6.0
5.0
25
450
1.0
0.1
2.0
1.0
-0.05...+0.05
70
BZX55C6V2
6.2
5.8
6.6
5.0
10
200
1.0
0.1
2.0
2.0
0.03...0.06
64
BZX55C6V8
6.8
6.4
7.2
5.0
8
150
1.0
0.1
2.0
3.0
0.03...0.07
58
BZX55C7V5
7.5
7.0
7.9
5.0
7
50
1.0
0.1
2.0
5.0
0.03...0.07
53
BZX55C8V2
8.2
7.7
8.7
5.0
7
50
1.0
0.1
2.0
6.2
0.03...0.08
47
BZX55C9V1
9.1
8.5
9.6
5.0
10
50
1.0
0.1
2.0
6.8
0.03...0.09
43
BZX55C10
10
9.4
10.6
5.0
15
70
1.0
0.1
2.0
7.5
0.03...0.10
40
BZX55C11
11
10.4
11.6
5.0
20
70
1.0
0.1
2.0
8.2
0.03...0.11
36
BZX55C12
12
11.4
12.7
5.0
20
90
1.0
0.1
2.0
9.1
0.03...0.11
32
BZX55C13
13
12.4
14.1
5.0
26
110
1.0
0.1
2.0
10.0
0.03...0.11
29
BZX55C14
14
13.1
15.0
5.0
28
110
1.0
0.1
2.0
10.5
0.03...0.11
28
BZX55C15
15
13.8
15.6
5.0
30
110
1.0
0.1
2.0
11
0.03...0.11
27
BZX55C16
16
15.3
17.1
5.0
40
170
1.0
0.1
2.0
12
0.03...0.11
24
BZX55C18
18
16.8
19.1
5.0
50
170
1.0
0.1
2.0
13
0.03...0.11
21
BZX55C20
20
18.8
21.2
5.0
55
220
1.0
0.1
2.0
15
0.03...0.11
20
BZX55C22
22
20.8
23.3
5.0
55
220
1.0
0.1
2.0
16
0.04...0.12
18
BZX55C24
24
22.8
25.6
5.0
80
220
1.0
0.1
2.0
18
0.04...0.12
16
BZX55C27
27
25.1
28.9
5.0
80
220
1.0
0.1
2.0
20
0.04...0.12
14
BZX55C30
30
28
32
5.0
80
220
1.0
0.1
2.0
22
0.04...0.12
13
BZX55C33
33
31
35
5.0
80
220
1.0
0.1
2.0
24
0.04...0.12
12
BZX55C36
36
34
38
5.0
80
220
1.0
0.1
2.0
27
0.04...0.12
11
BZX55C39
39
37
41
2.5
90
500
0.5
0.1
5.0
30
0.04...0.12
10
BZX55C43
43
40
46
2.5
90
500
0.5
0.1
5.0
33
0.04...0.12
9.2
BZX55C47
47
44
50
2.5
110
600
0.5
0.1
5.0
36
0.04...0.12
8.5
BZX55C51
51
48
54
2.5
125
700
0.5
0.1
10
39
0.04...0.12
7.8
BZX55C56
56
52
60
2.5
135
700
0.5
0.1
10
43
typ. 0.1(4)
7.0
BZX55C62
62
58
66
2.5
150
1000
0.5
0.1
10
47
typ. 0.1(4)
6.4
BZX55C68
68
64
72
2.5
200
1000
0.5
0.1
10
51
typ. 0.1(4)
5.9
BZX55C75
75
70
79
2.5
250
1000
0.5
0.1
10
56
typ. 0.1(4)
5.3
BZX55C82
82
77
87
2.5
300
1500
0.25
0.1
10
62
typ. 0.1(4)
4.8
BZX55C91
91
85
96
1.0
450
2000
0.1
0.1
10
68
typ. 0.1(4)
4.4
BZX55C100
100
94
106
1.0
450
5000
0.1
0.1
10
75
typ. 0.1(4)
4.0
Type
1)
2)
2)
IZT
ZZT @ IZT ZZk @ IZK
(mA)
(Ω)
(Ω)
IZK
(mA)
Number
Nom
(V)
Min
(V)
Max
(V)
(µA)
BZX55C2V0
2.0
1.9
2.1
5.0
85
600
1.0
100
BZX55C2V2
2.2
2.08
2.41
5.0
85
600
1.0
50
BZX55C2V4
2.4
2.28
2.56
5.0
85
600
1.0
BZX55C2V7
2.7
2.5
2.9
5.0
85
600
BZX55C3V0
3.0
2.8
3.2
5.0
85
BZX55C3V3
3.3
3.1
3.5
5.0
BZX55C3V6
3.6
3.4
3.8
BZX55C3V9
3.9
3.7
BZX55C4V3
4.3
BZX55C4V7
Ta=25°C Ta=150°C
Notes: 1) Tested with pulses tp = 20 ms
2) Valid Provided that leads are kept at ambient temperature at a distance of 8 mm from case
3) For ± 2% tolerance altered the sixth letter of type from "C" to be "B"
(4) at Iz = 2.5 mA
Page 2 of 2
Rev. 05 : June 25, 2005