CJB04N60A TO-263-2L Plastic-Encapsulate MOSFETS CJB04N60A N-Channel Power MOSFET TO-263-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. 1. GATE 2. DRAIN 3. SOURCE FEATURE z High Current Rating Lower RDS(on) z Lower Capacitance z z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current ID 4.0 Pulsed Drain Current IDM 16 Single Pulsed Avalanche Energy (note1) EAS 260 mJ Thermal Resistance from Junction to Ambient RθJA 62.5 ℃/W TJ, TSTG -55 ~+150 TL 260 Operating and Storage Temperature Range Maximum lead temperure for soldering purposes , 1/8”from case for 5 seconds [email protected] www.zpsemi.com V A ℃ 1 of 2 CJB04N60A Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 600 V Drain-source diode forward voltage(note2) VSD VGS = 0V, IS =4.0A 1.5 Zero gate voltage drain current IDSS VDS =600V, VGS =0V 25 µA Gate-body leakage current (note2) IGSS VDS =0V, VGS =±30V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 4.0 V Static drain-source on-resistance RDS(on) VGS =10V, ID =2.0A On characteristics (note2) Forward transconductance gfs VDS =50V, ID =2A 2.0 2.0 3.0 2.5 Ω S Dynamic characteristics (note 3) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 760 VDS =25V,VGS =0V,f =1MHz 180 pF 20 Switching characteristics (note 3) Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time (note3) td(on) Turn-on rise time (note3) Turn-off delay time (note3) Turn-off fall time (note3) tr td(off) 5.0 VDS =480V,VGS =10V,ID =4.0A 10 nC 2.7 2.0 20 VDD=300V, VGS=10V, 10 RG=9.1Ω, ID =4.0A 40 tf ns 20 Notes : 1. L=30mH, IL=4A, VDD=100V, VGS=10V,RG=25Ω,Starting TJ=25℃. 2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 3. These parameters have no way to verify. [email protected] www.zpsemi.com 2 of 2