POINN BUL791 Npn silicon power transistor Datasheet

BUL791
NPN SILICON POWER TRANSISTOR
Copyright © 1997, Power Innovations Limited, UK
●
Designed Specifically for High Frequency
Electronic Ballasts up to 125 W
●
hFE 6 to 22 at VCE = 1 V, IC = 2 A
●
Low Power Losses (On-state and Switching)
●
Key Parameters Characterised at High
Temperature
●
Tight and Reproducible Parametric
Distributions
JULY 1991 - REVISED SEPTEMBER 1997
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (V BE = 0)
VCES
700
V
Collector-base voltage (IE = 0)
VCBO
700
V
Collector-emitter voltage (IB = 0)
VCEO
400
V
Emitter-base voltage
V EBO
9
V
IC
4
A
Peak collector current (see Note 1)
ICM
8
A
Peak collector current (see Note 2)
ICM
14
A
IB
2.5
A
Peak base current (see Note 2)
IBM
3.5
A
Continuous device dissipation at (or below) 25°C case temperature
Ptot
75
W
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
Continuous collector current
Continuous base current
Operating junction temperature range
Storage temperature range
NOTES: 1. This value applies for tp = 10 ms, duty cycle ≤ 2%.
2. This value applies for tp = 300 µs, duty cycle ≤ 2%.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BUL791
NPN SILICON POWER TRANSISTOR
JULY 1991 - REVISED SEPTEMBER 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
VCEO(sus)
ICES
IEBO
VBE(sat)
VCE(sat)
hFE
V FCB
TEST CONDITIONS
Collector-emitter
sustaining voltage
IC = 100 mA
L = 25 mH
Collector-emitter
VCE = 700 V
VBE = 0
cut-off current
VCE = 700 V
VBE = 0
VEB =
IC = 0
Emitter cut-off
current
9V
MIN
(see Note 3)
TYP
400
10
TC = 90°C
200
1
IB = 400 mA
IC =
2A
(see Notes 4 and 5)
0.94
saturation voltage
IB = 400 mA
IC =
2A
TC = 90°C
0.86
Collector-emitter
IB = 400 mA
IC =
2A
(see Notes 4 and 5)
0.25
saturation voltage
IB = 400 mA
IC =
2A
TC = 90°C
0.3
transfer ratio
Collector-base forward
bias diode voltage
1
0.4
VCE =
1V
IC = 10 mA
10
VCE =
1V
IC =
2A
6
12
22
VCE =
5V
IC =
8A
2
6.5
14
ICB = 60 mA
UNIT
V
Base-emitter
Forward current
MAX
µA
mA
V
V
16.5
850
mV
NOTES: 3. Inductive loop switching measurement.
4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 3.2 mm from the device body.
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJA
Junction to free air thermal resistance
62.5
°C/W
RθJC
Junction to case thermal resistance
1.66
°C/W
TYP
MAX
UNIT
2.2
3
µs
95
180
ns
210
300
ns
inductive-load switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
tsv
Storage time
tfi
Current fall time
txo
Cross over time
tsv
Storage time
IC = 2 A
IB(on) = 400 mA
VCC = 40 V
tfi
Current fall time
L = 1 mH
IB(off) = 250 mA
V CLAMP = 300 V
IC = 2 A
IB(on) = 400 mA
VCC = 40 V
L = 1 mH
IB(off) = 800 mA
V CLAMP = 300 V
4
6
µs
120
230
ns
TYP
MAX
UNIT
resistive-load switching characteristics at 25°C case temperature
PARAMETER
MIN
tsv
Storage time
IC = 2 A
IB(on) = 400 mA
2.2
3
µs
tfi
Current fall time
V CC = 300 V
IB(off) = 400 mA
160
250
ns
PRODUCT
2
TEST CONDITIONS
INFORMATION
BUL791
NPN SILICON POWER TRANSISTOR
JULY 1991 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
L791CHF
VCE(sat) - Collector-Emitter Saturation Voltage - V
30
TC = 25°C
hFE - Forward Current Transfer Ratio
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
10
VCE = 1 V
VCE = 5 V
1·0
0·01
0·1
1·0
10
L791CVB
10
IB = IC / 5
TC = 25°C
TC = 90°C
1·0
0·1
0·01
0·1
20
1·0
IC - Collector Current - A
Figure 1.
Figure 2.
INDUCTIVE SWITCHING TIMES
vs
COLLECTOR CURRENT
t sv
t xo
t fi
IB(on) = IC / 5
IB(off) = I C / 2.5
VCC
= 40 V
VCLAMP = 300 V
L
= 1 mH
TC
= 25°C
0·1
L791CI3
10
Inductive Switching Time - µs
Inductive Switching Time - µs
1·0
INDUCTIVE SWITCHING TIMES
vs
CASE TEMPERATURE
L791CI1
10
10
IC - Collector Current - A
IB(on) = 400 mA, VCC
= 40 V, L = 1 mH
IB(off) = 800 mA, VCLAMP = 300 V, IC = 2 A
1·0
0·1
tsv
tfi
0·01
0·1
0·01
1·0
IC - Collector Current - A
Figure 3.
PRODUCT
10
0
20
40
60
80
100
TC - Case Temperature - °C
Figure 4.
INFORMATION
3
BUL791
NPN SILICON POWER TRANSISTOR
JULY 1991 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
INDUCTIVE SWITCHING TIMES
vs
COLLECTOR CURRENT
L791CI2
10
L791CI4
10
IB(on) = 400 mA, VCC
= 40 V, L = 1 mH
IB(off) = 250 mA, VCLAMP = 300 V, IC = 2 A
tsv
tfi
IB(on) = IC / 5
IB(off) = I C / 8
VCC
= 40 V
VCLAMP = 300 V
L
= 1 mH
TC
= 25°C
Inductive Switching Time - µs
Inductive Switching Time - µs
INDUCTIVE SWITCHING TIMES
vs
CASE TEMPERATURE
1·0
1·0
tsv
tfi
0·1
0·1
0·1
1·0
10
0
20
IC - Collector Current - A
IB(on) = 400 mA, VCC = 300 V
IB(off) = 400 mA, I C = 2 A
Resistive Switching Time - µs
Resistive Switching Time - µs
L791CR2
10
= IC / 5, VCC = 300 V
= IC / 5, T C = 25°C
1·0
1·0
tsv
tfi
tsv
tfi
0·1
1·0
IC - Collector Current - A
Figure 7.
PRODUCT
4
100
RESISTIVE SWITCHING TIMES
vs
CASE TEMPERATURE
L791CR1
0·1
0·1
80
Figure 6.
RESISTIVE SWITCHING TIMES
vs
COLLECTOR CURRENT
IB(on)
IB(off)
60
TC - Case Temperature - °C
Figure 5.
10
40
INFORMATION
10
0
20
40
60
TC - Case Temperature - °C
Figure 8.
80
100
BUL791
NPN SILICON POWER TRANSISTOR
JULY 1991 - REVISED SEPTEMBER 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
10
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
L791CFB
L791CRB
10
IB(on) = IC / 5
VBE(off) = -5 V
TC
= 25°C
IC - Collector Current - A
IC - Collector Current - A
8
1·0
0·1
TC = 25°C
tp = 10 µs
tp = 100 µs
tp = 1 ms
tp = 10 ms
DC Operation
0·01
1·0
6
4
2
0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 9.
PRODUCT
0
100
200
300
400
500
600
700
800
VCE - Collector-Emitter Voltage - V
Figure 10.
INFORMATION
5
BUL791
NPN SILICON POWER TRANSISTOR
JULY 1991 - REVISED SEPTEMBER 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
1,70
1,07
0,97
0,61
1
2
14,1
12,7
3
2,74
2,34
5,28
4,88
VERSION 1
0,64
0,41
2,90
2,40
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
PRODUCT
6
INFORMATION
MDXXBE
BUL791
NPN SILICON POWER TRANSISTOR
JULY 1991 - REVISED SEPTEMBER 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT
INFORMATION
7
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