Transistors IC SMD Type NPN General Purpose Transistor BC846,BC847,BC848 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 0.4 3 1 0.55 Low voltage (max. 65 V). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol BC846 BC847 BC848 Unit Collector-base voltage VCBO 80 50 30 V Collector-emitter voltage VCEO 65 45 30 V Emitter-base voltage VEBO 6 6 5 V Collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 mA Total power dissipation * mW Ptot 250 Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board, standard footprint. www.kexin.com.cn 1 Transistors IC SMD Type BC846,BC847,BC848 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current Emitter cutoff current Testconditons Min VCB = 30 V, IE = 0 15 nA VCB = 30 V, IE = 0 , Tj = 150 5 ìA IEBO VEB = 5 V, IC = 0 100 nA BC847 450 110 hFE IC = 2 mA; VCE = 5 V 110 800 180 200 290 450 BC847C 420 520 800 IC = 10 mA; IB = 0.5 mA 90 250 mV 600 mV VCE(sat) Base-emitter saturation voltage VBE(sat) Base-emitter voltage VBE IC = 100 mA; IB = 5 mA; * 200 IC = 10 mA; IB = 0.5 mA 700 mV IC = 100 mA; IB = 5 mA; * 900 mV IC = 2 mA; VCE = 5 V 580 660 IC = 10 mA; VCE = 5 V Collector capacitance CC VCB = 10 V; IE = Ie = 0;f = 1 MHz Transition frequency fT VCE = 5 V; IC = 10 mA;f = 100 MHz NF IC = 200ìA; VCE = 5 V;RS = 2 kÙ; = 1 kHz;B = 200 Hz Noise figure 300µs, ä 0.02. hFE Classification 2 220 BC846B,BC847B,BC848B Collector-emitter saturation voltage * Pulse test: tp Unit ICBO 110 BC846A,BC847A Max ICBO BC846 DC current gain Typ TYPE BC846 BC846A BC846B Marking 1D 1A 1B TYPE BC847 BC847A BC847B BC847C Marking 1H 1E 1F 1G TYPE BC848 Marking 1K www.kexin.com.cn 700 mV 770 mV 2.5 pF 100 f MHz 2 10 dB