BYP 300 Preliminary data FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type VRRM IFRMS trr Package Ordering Code BYP 300 1200V 6.5A 55ns TO-218 AD C67047-A2250-A2 Maximum Ratings Parameter Symbol Mean forward current IFAV TC = 90 °C, D = 0.5 Values A 4 RMS forward current IFRMS Surge forward current, sine halfwave, aperiodic IFSM Tj = 100 °C, f = 50 Hz 6.5 15 IFRM Repetitive peak forward current Tj = 100 °C, tp ≤ 10 µs 40 ∫i2dt i 2t value Tj = 100 °C, tp = 10 ms A2s 1.1 Repetitive peak reverse voltage VRRM 1200 Surge peak reverse voltage VRSM 1200 Power dissipation Ptot TC = 90 °C V W 15 Chip or operating temperature Tj -40 ... + 150 Storage temperature Tstg -40 ... + 150 Thermal resistance, chip case RthJC ≤ 3.8 Thermal resistance, chip-ambient RthJA ≤ 46 DIN humidity category, DIN 40 040 - E IEC climatic category, DIN IEC 68-1 - Semiconductor Group Unit 1 °C K/W - 40 / 150 / 56 09.96 BYP 300 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Forward voltage drop VF V IF = 4 A, Tj = 25 °C - 2.3 3 IF = 4 A, Tj = 100 °C - 2 - Reverse current IR mA VR = 1200 V, Tj = 25 °C - 0.01 0.25 VR = 1200 V, Tj = 100 °C - 0.05 - VR = 1200 V, Tj = 150 °C - 0.15 - AC Characteristics Reverse recovery charge Qrr µC IF = 4 A, VCC = 300 V, diF/dt = -800 A/µs Tj = 100 °C Peak reverse recovery current - 0.8 - IRRM A IF = 4 A, VCC = 300 V, diF/dt = -800 A/µs Tj = 100 °C Reverse recovery time - 22 - trr ns IF = 4 A, VCC = 300 V, diF/dt = -800 A/µs Tj = 100 °C Storage time - 55 - - 30 - tS IF = 4 A, VCC = 300 V, diF/dt = -800 A/µs Tj = 100 °C Softfaktor S - IF = 4 A, VCC = 300 V, diF/dt = -800 A/µs Tj = 100 °C Semiconductor Group - 2 0.8 - 09.96