Siemens C67047-A2250-A2 Fred diode (fast recovery epitaxial diode soft recovery characteristics) Datasheet

BYP 300
Preliminary data
FRED Diode
• Fast recovery epitaxial diode
• Soft recovery characteristics
Type
VRRM
IFRMS
trr
Package
Ordering Code
BYP 300
1200V
6.5A
55ns
TO-218 AD
C67047-A2250-A2
Maximum Ratings
Parameter
Symbol
Mean forward current
IFAV
TC = 90 °C, D = 0.5
Values
A
4
RMS forward current
IFRMS
Surge forward current, sine halfwave, aperiodic
IFSM
Tj = 100 °C, f = 50 Hz
6.5
15
IFRM
Repetitive peak forward current
Tj = 100 °C, tp ≤ 10 µs
40
∫i2dt
i 2t value
Tj = 100 °C, tp = 10 ms
A2s
1.1
Repetitive peak reverse voltage
VRRM
1200
Surge peak reverse voltage
VRSM
1200
Power dissipation
Ptot
TC = 90 °C
V
W
15
Chip or operating temperature
Tj
-40 ... + 150
Storage temperature
Tstg
-40 ... + 150
Thermal resistance, chip case
RthJC
≤ 3.8
Thermal resistance, chip-ambient
RthJA
≤ 46
DIN humidity category, DIN 40 040
-
E
IEC climatic category, DIN IEC 68-1
-
Semiconductor Group
Unit
1
°C
K/W
-
40 / 150 / 56
09.96
BYP 300
Preliminary data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Forward voltage drop
VF
V
IF = 4 A, Tj = 25 °C
-
2.3
3
IF = 4 A, Tj = 100 °C
-
2
-
Reverse current
IR
mA
VR = 1200 V, Tj = 25 °C
-
0.01
0.25
VR = 1200 V, Tj = 100 °C
-
0.05
-
VR = 1200 V, Tj = 150 °C
-
0.15
-
AC Characteristics
Reverse recovery charge
Qrr
µC
IF = 4 A, VCC = 300 V, diF/dt = -800 A/µs
Tj = 100 °C
Peak reverse recovery current
-
0.8
-
IRRM
A
IF = 4 A, VCC = 300 V, diF/dt = -800 A/µs
Tj = 100 °C
Reverse recovery time
-
22
-
trr
ns
IF = 4 A, VCC = 300 V, diF/dt = -800 A/µs
Tj = 100 °C
Storage time
-
55
-
-
30
-
tS
IF = 4 A, VCC = 300 V, diF/dt = -800 A/µs
Tj = 100 °C
Softfaktor
S
-
IF = 4 A, VCC = 300 V, diF/dt = -800 A/µs
Tj = 100 °C
Semiconductor Group
-
2
0.8
-
09.96
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