Diodes DMN60H3D5SK3-13 600v n-channel enhancement mode mosfet Datasheet

DMN60H3D5SK3
Green
600V N-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
ADVANCED INFORMATION
Product Summary
Features
BVDSS
RDS(ON) Max
600V
3.5 @ VGS = 10V
ID
TC = +25°C
2.8A



Low Input Capacitance
High BVDSS Rating for Power Application
Low Input/Output Leakage


Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power
management applications.
Mechanical Data
Applications









Motor Control
Backlighting
DC-DC Converters
Power Management Functions

Case: TO252 (DPAK) (Type TH)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
D
TO252 (DPAK) (Type TH)
D
G
Top View
S
Top View
Pin Out
Internal Schematic
Ordering Information (Note 4)
Part Number
DMN60H3D5SK3-13
Notes:
Case
TO252 (DPAK) (Type TH)
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
60H3D5S
YYWW
DMN60H3D5SK3
Document number: DS37884 Rev. 2 - 2
=Manufacturer’s Marking
60H3D5S = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 17 = 2017)
WW or WW = Week Code (01 to 53)
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DMN60H3D5SK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
NEW PRODUCT
ADVANCED INFORMATION
Continuous Drain Current (Note 5) VGS = 10V
TC = +25°C
TC = +100°C
Steady
State
Value
600
±30
2.8
1.8
2.5
4.4
1.0
30
2.7
ID
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
Avalanche Current, L = 60mH (Note 7)
Avalanche Energy, L = 60mH (Note 7)
IS
IDM
IAS
EAS
dv/dt
Peak Diode Recovery dv/dt (VDD = 400V, ID = 2.7A)
Unit
V
V
A
A
A
A
mJ
V/ns
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
TC = +25°C
TC = +100°C
Total Power Dissipation (Note 5)
PD
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
RJA
RJC
TJ, TSTG
Value
41
16
46
3.0
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
IGSS
600






1.0
±100
V
µA
nA
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS(TH)
RDS(ON)
VSD
2.0


3.1
2.7
0.9
4.0
3.5
1.5
V

V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1.5A
VGS = 0V, IS = 3.0A
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR













354
41
4
2.6
12.6
1.7
7.1
10.6
22
34
28
198
952













pF
VDS = 25V, VGS = 0V, f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = 480V, ID = 2.5A
ns
VGS = 10V , VDD = 300V, RG = 25,
ID = 2.5A
ns
nC
VGS = 0V, IS = 2.5A, dI/dt = 100A/μs
5. Device mounted on infinite heatsink.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
DMN60H3D5SK3
Document number: DS37884 Rev. 2 - 2
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DMN60H3D5SK3
5.0
1
VDS=10V
VGS=20.0V
0.8
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
4.0
VGS=10.0V
3.0
VGS=4.5V
VGS=6.0V
2.0
VGS=8.0V
1.0
0.6
0.4
0.2
25℃
150℃
0.0
-55℃
0
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
30
2
Figure 1. Typical Output Characteristic
4
3.5
3
2.5
3
3.5
4
4.5
VGS, GATE-SOURCE VOLTAGE (V)
5
Figure 2. Typical Transfer Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
85℃
125℃
VGS=4.0V
VGS=10V
2.5
2
1.5
10
8
6
ID=1.5A
4
2
0
0
0.5
1
1.5
2
2.5
3
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
5
10
15
20
25
30
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
3
9
VGS=10V
8
150℃
125℃
7
85℃
6
5
4
25℃
3
2
-55℃
1
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
NEW PRODUCT
ADVANCED INFORMATION
VGS=5.0V
0
0
0.5
1
1.5
2
2.5
3
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
DMN60H3D5SK3
Document number: DS37884 Rev. 2 - 2
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2.5
2
VGS=10V, ID=4A
1.5
1
0.5
0
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
January 2017
© Diodes Incorporated
DMN60H3D5SK3
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
3.8
7
6
5
4
VGS=10V, ID=1.5A
3
2
1
0
3.6
3.4
ID=1mA
3.2
3
2.8
ID=250μA
2.6
2.4
2.2
2
-50
-25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE (℃)
150
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Temperature
Figure 7. On-Resistance Variation with Temperature
3
1000
IS, SOURCE CURRENT (A)
2.5
VGS=0V, TA=125℃
2
VGS=0V, TA=150℃
1.5
VGS=0V, TA=85℃
1
VGS=0V, TA=25℃
0.5
VGS=0V, TA=-55℃
CT, JUNCTION CAPACITANCE (pF)
f=1MHz
0
Ciss
100
Coss
10
Crss
1
0
0.3
0.6
0.9
1.2
1.5
0
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
5
10
15
20
25
30
35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
40
PW =10μs
RDS(ON) Limited
ID, DRAIN CURRENT (A)
8
VDS=480V, ID=2.5A
6
VGS (V)
NEW PRODUCT
ADVANCED INFORMATION
8
4
PW =1μs
1
PW =100μs
PW =1ms
PW =10ms
0.1
TJ(MAX)=150℃
TA=25℃
Single Pulse
DUT on infinite heatsink
VGS=10V
2
0
0.01
0
2
4
6
8
10
Qg (nC)
Figure 11. Gate Charge
DMN60H3D5SK3
Document number: DS37884 Rev. 2 - 2
12
14
1
PW =100ms
DC
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
1000
Figure 12. SOA, Safe Operation Area
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DMN60H3D5SK3
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
ADVANCED INFORMATION
1
D=0.5
D=0.9
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJC (t)=r(t) * RθJC
RθJC=2.79℃ /W
Duty Cycle, D=t1 / t2
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
DMN60H3D5SK3
Document number: DS37884 Rev. 2 - 2
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DMN60H3D5SK3
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO252 (DPAK) (Type TH)
A
b3
7° ± 2°
L5
Ø
c
A4
D
1.
L4
0
20
NEW PRODUCT
ADVANCED INFORMATION
E
L3
H
A2
7° ± 2°
e
b(3x)
Gauge Plane
E1
7° ± 2°
L2
D1
Seating Plane
a
L
A1
2.90REF
TO252 (DPAK)
(Type TH)
Dim Min Max Typ
A 2.20 2.38 2.30
A1 0.00 0.10
A2 0.97 1.17 1.07
A4
0.10 REF
b 0.72 0.85 0.78
b3 5.23 5.45 5.33
c
0.47 0.58 0.53
D 6.00 6.20 6.10
D1
5.30 REF
e
2.286 BSC
E 6.50 6.70 6.60
E1 4.70 4.92 4.83
H 9.90 10.10 10.30
L 1.40 1.70 1.60
L2
0.51 BSC
L3 0.90 1.25
L4 0.60 1.00 0.80
L5 1.70 1.90 1.80
a
0°
8°
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO252 (DPAK) (Type TH)
X1
Dimensions
C
X
X1
Y
Y1
Y2
Y1
Y2
C
Value (in mm)
4.572
1.060
5.632
2.600
5.700
10.700
Y
X
DMN60H3D5SK3
Document number: DS37884 Rev. 2 - 2
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IMPORTANT NOTICE
NEW PRODUCT
ADVANCED INFORMATION
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
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Document number: DS37884 Rev. 2 - 2
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