BTA16, BTB16 T1610, T1635 16 A Snubberless™, logic level and standard Triacs TO-220AB insulated BTA16 Features ■ Medium current Triac ■ Low thermal resistance with clip bonding ■ Low thermal resistance insulation ceramic for insulated BTA ■ High commutation (4Q) or very high commutation (3Q) capability ■ BTA series UL1557 certified (File ref: 81734) ■ RoHS ( 2002/95/EC) compliant ■ Insulated tab (BTA series, rated at 2500 VRMS) TO-220AB BTB16 D2PAK T1635G T1610G Applications ■ ■ A2 Snubberless versions (BTA/BTB...W and T1635) especially recommended for use on inductive loads, because of their high commutation performances G A1 On/off or phase angle function in applications such as static relays, light dimmers and appliance motor speed controllers Description Available either in through-hole or surface-mount packages, the BTA16, BTB16, T1610 and T1635 Triacs series are suitable for general purpose mains power AC switching. Table 1. Device summary Symbol IT(RMS) VDRM/VRRM Parameter On-state rms current Repetitive peak off-state voltage IGT (Snubberless) Triggering gate current BTA16 (1) BTB16 T1610 T1635 16 16 16 16 600/800 600/800 600/800 600/800 35/50 35/50 - 35 IGT (logic level) Triggering gate current 10 10 10 - IGT (standard) Triggering gate current 25/50 25/50 - - 1. Insulated TM: Snubberless is a trademark of STMicroelectronics 2014-6-9 1 www.kersemi.com BTA16, BTB16 T1610, T1635 Table 2. Absolute maximum ratings Symbol IT(RMS) ITSM I²t dI/dt VDSM/ VRSM IGM PG(AV) Tstg Tj Table 3. Parameter Value Unit 16 A D2PAK / TO-220AB Tc = 100 °C TO-220AB insulated Tc = 86 °C Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) F = 50 Hz t = 20 ms 160 F = 60 Hz t = 16.7 ms 168 I²t value for fusing tp = 10 ms On-state rms current (full sine wave) A 144 A ²s Critical rate of rise of on-state current F = 120 Hz IG = 2 x IGT , tr ≤ 100 ns Tj = 125 °C 50 A/µs Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25 °C VDRM/VRRM + 100 V Peak gate current tp = 20 µs Tj = 125 °C 4 A Tj = 125 °C 1 W Average gate power dissipation Storage temperature range -40 to + 150 Maximum operating junction temperature -40 to + 125 Electrical characteristics (Tj = 25 °C, unless otherwise specified) Snubberless and logic level (3 quadrants) BTA16 / BTB16 Symbol IGT (1) VGT Test conditions VD = 12 V RL = 33 Ω VGD VD = VDRM RL = 3.3 kΩ Tj = 125 °C IH (2) IT = 500 mA IL IG = 1.2 IGT Quadrant T1610 T1635 dV/dt (2) VD = 67 %VDRM gate open (2) 10 35 50 I - II - III Max. 1.3 V I - II - III Min. 0.2 V 15 35 15 35 50 25 50 25 50 70 30 60 30 60 80 40 500 40 500 1000 8.5 - 8.5 - - 3.0 - 3.0 - - - 8.5 - 8.5 14 Max. II Tj = 125 °C Min. (dV/dt)c = 0.1 V/µs Tj = 125 °C (dI/dt)c BW Max. I - III 35 CW I - II - III Max. 10 Unit SW (dV/dt)c = 10 V/µs Tj = 125 °C Without snubber Tj = 125 °C Min. mA mA mA V/µs A/ms 1. Minimum IGT is guaranted at 5% of IGT max 2. For both polarities of A2 referenced to A1 2014-6-9 2 www.kersemi.com BTA16, BTB16 T1610, T1635 Table 4. Electrical characteristics (Tj = 25 °C, unless otherwise specified) standard (4 quadrants) BTA16 / BTB16 Symbol IGT (1) Test conditions VD = 12 V Quadrant RL = 33 Ω VD = VDRM RL = 3.3 kΩ Tj = 125 °C IH (2) IT = 500 mA IL IG = 1.2 IGT 50 100 ALL Max. 1.3 V ALL Min. 0.2 V Max. 25 50 40 60 80 120 Max. II dV/dt (2) VD = 67 %VDRM gate open (2) 25 50 Max. I - III - IV (dV/dt)c B I - II - III IV VGT VGD Unit C (dI/dt)c = 7 A/ms mA mA mA Tj = 125 °C Min. 200 400 V/µs Tj = 125 °C Min. 5 10 V/µs 1. Minimum IGT is guaranted at 5% of IGT max 2. For both polarities of A2 referenced to A1 Table 5. Static characteristics Symbol Test conditions VT (2) ITM = 22.5 A Vto (2) Unit Tj = 25 °C Max. 1.55 V Threshold voltage Tj = 125 °C Max. 0.85 V Rd (2) Dynamic resistance Tj = 125 °C Max. 25 mΩ IDRM IRRM 5 µA VDRM = VRRM 2 mA Value Unit Table 6. tp = 380 µs Value Max. Tj = 125 °C Thermal resistance Symbol Rth(j-c) Tj = 25 °C Parameter D2PAK / TO-220AB 1.2 TO-220AB insulated 2.1 Junction to case (AC) °C/W S(1) = 1 cm² D2PAK Rth(j-a) Junction to ambient TO-220AB / TO-220AB insulated 45 °C/W 60 1. S = Copper surface under tab 2014-6-9 3 www.kersemi.com BTA16, BTB16 T1610, T1635 Figure 1. Maximum power dissipation versus Figure 2. on-state rms current (full cycle) P(W) On-state rms current versus case temperature (full cycle) IT(RMS)(A) 20 18 18 16 16 BTB / T16 14 BTA 14 12 12 10 10 8 8 6 6 4 4 2 2 IT(RMS)(A) TC(°C) 0 0 0 2 Figure 3. 4 6 8 10 12 14 0 16 On-state rms current versus ambient temperature (full cycle) 25 Figure 4. IT(RMS)(A) 50 75 100 125 Relative variation of thermal impedance versus pulse duration K=[Zth/Rth] 4.0 1E+0 printed circuit board FR4, copper thickness: 35 µm D2PAK 3.5 (S=1cm2) Zth(j-c) 3.0 Zth(j-a) 2.5 2.0 1E-1 1.5 1.0 0.5 TC(°C) 0.0 0 25 Figure 5. 50 tp(s) 1E-2 75 100 1E-3 125 On-state characteristics (maximum values) 1E-2 Figure 6. ITM(A) 1E-1 1E+0 1E+1 1E+2 5E+2 Surge peak on-state current versus number of cycles ITSM(A) 200 180 Tj max. Vto = 0.85V Rd = 25 mΩ 100 160 140 Tj = Tj max. t=20ms 120 One cycle Non repetitive Tj initial=25°C 100 Tj = 25°C. 80 10 Repetitive TC=85°C 60 40 20 VTM(V) 0.5 2014-6-9 1.0 1.5 2.0 2.5 3.0 Number of cycles 0 1 3.5 4.0 4.5 5.0 4 1 10 100 1000 www.kersemi.com BTA16, BTB16 T1610, T1635 Figure 7. Non-repetitive surge peak on-state Figure 8. current for a sinusoidal 2 2 Relative variation of gate trigger current IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] ITSM(A), I t (A s) 2.5 3000 holding current and latching current versus junction temperature (typical values) Tj initial=25°C dI/dt limitation: 50A/µs 2.0 IGT 1000 1.5 ITSM IH & I L 1.0 I2t 0.5 2 pulse with width tp < 10 ms and corresponding value of I t 100 0.01 0.10 Figure 9. Tj(°C) tp(ms) 1.00 0.0 -40 10.00 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) -20 0 20 40 60 80 100 120 140 Figure 10. Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (dI/dt)c [Tj] / (dI/dt)c [Tj specified] (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 6 2.0 Standard types Snubberless and Logic level types 1.8 SW 1.6 5 C B 4 1.4 1.2 3 T1635/CW/BW 1.0 2 0.8 1 0.6 Tj(°C) (dV/dt)c (V/µs) 0.4 0 0.1 1.0 10.0 100.0 0 25 50 75 100 125 Figure 11. D2PAK thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 µm) Rth(j-a)(°C/W) 80 70 60 50 D2PAK 40 30 20 10 S(cm²) 0 0 2014-6-9 4 8 12 16 5 20 24 28 32 36 40 www.kersemi.com BTA16, BTB16 T1610, T1635 Figure 12. Ordering information scheme (BTA16 and BTB16 series) BT A 16 - 600 BW RG TRIAC series Insulation A = insulated B = non insulated Current 16 = 16 A Voltage 600 = 600 V 800 = 800 V Sensitivity and type B = 50 mA Standard C = 25 mA Standard SW = 10 mA Logic Level BW = 50 mA Snubberless CW = 35 mA Snubberless Packing mode RG = Tube Figure 13. Ordering information scheme (T16 series) T 16 35 - 600 G (-TR) TRIAC series Current 16 = 16 A Sensitivity 10 = 10 mA 35 = 35 mA Voltage 600 = 600 V 800 = 800 V Package 2 G = D PAK Packing mode Blank = Tube -TR = Tape and reel Table 7. Product selector Device(1) Voltage (xxx) Sensitivity 600 V Type Package 800 V BTA/BTB16-xxxB X X 50 mA Standard TO-220AB BTA/BTB16-xxxBW X X 50 mA Snubberless TO-220AB BTA/BTB16-xxxC X 25 mA Standard TO-220AB BTA/BTB16-xxxCW X X 35 mA Snubberless TO-220AB BTA/BTB16-xxxSW X X 10 mA Logic level TO-220AB T1610-xxxG X X 10 mA Logic level D2PAK T1635-xxxG X X 35 mA Snubberless D2PAK 1. BTB: non insulated TO-220AB package 2014-6-9 6 www.kersemi.com