AO4407A 30V P-Channel MOSFET General Description Product Summary The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. VDS = -30V ID = -12A (VGS = -20V) RDS(ON) < 11mΩ (VGS = -20V) RDS(ON) < 13mΩ (VGS = -10V) RDS(ON) < 17mΩ (VGS = -6V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C Avalanche Current G Repetitive avalanche energy L=0.3mH TA=25°C Power Dissipation A TA=70°C G Junction and Storage Temperature Range Maximum Junction-to-Lead C Units V ±25 V -12 B Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A -30 Maximum ID -10 IDM -60 IAR -26 EAR 101 Alpha & Omega Semiconductor, Ltd. mJ 3.1 PD W 2.0 TJ, TSTG Symbol t ≤ 10s Steady State Steady State A RθJA RθJL -55 to 150 Typ 32 60 17 Max 40 75 24 °C Units °C/W °C/W °C/W www.aosmd.com AO4407A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID = -250µA, VGS = 0V -30 IGSS Gate-Body leakage current VDS = 0V, VGS = ±25V VGS(th) Gate Threshold Voltage VDS = VGS ID = -250µA -1.7 ID(ON) On state drain current VGS = -10V, VDS = -5V -60 TJ = 55°C 15 VGS = -10V, ID = -12A 10 13 VGS = -6V, ID = -10A 12.7 17 21 Diode Forward Voltage IS = -1A,VGS = 0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance -0.7 2060 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=-10V, VDS=-15V, ID=-12A nA V mΩ S -1 V -3 A 2600 pF 370 pF 295 pF 2.4 3.6 Ω 30 39 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-12A, dI/dt=100A/µs 30 Qrr Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs 22 VGS=-10V, VDS=-15V, RL=1.25Ω, RGEN=3Ω µA A 11.5 TJ=125°C VSD Crss -3 11 VDS = -5V, ID = -10A Output Capacitance -2.3 8.5 Forward Transconductance Coss -5 ±100 VGS = -20V, ID = -12A gFS Units -1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max V VDS = -30V, VGS = 0V IDSS RDS(ON) Typ 4.6 nC 10 nC 11 ns 9.4 ns 24 ns 12 ns 40 ns nC 2 A: The value of R θJA is measured with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C. Rev10: Nov 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4407A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 -10V VDS= -5V -6V 60 -5V -ID(A) -ID (A) 60 -4.5V 40 40 -4V 125°C 20 20 25°C VGS= -3.5V 0 0 0 1 2 3 4 5 0 0.5 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 20 Normalized On-Resistance 1.8 15 RDS(ON) (mΩ ) 1 VGS=-6V 10 VGS=-10V VGS=-20V 5 0 VGS=-20V ID=-12A 1.6 1.4 VGS=-10V ID=-12A 1.2 VGS=-6V ID=-10A 1.0 0.8 0 4 I12 dI/dt=100A/µs 20 F=-6.5A, 16 8 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 1E+01 ID=-12A 1E+00 25 20 -IS (A) RDS(ON) (mΩ ) 1E-01 125°C 15 125°C 1E-02 1E-03 25°C 1E-04 10 1E-05 25°C 1E-06 5 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4407A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 Ciss Capacitance (pF) -VGS (Volts) 2500 VDS=-15V ID=-12A 8 6 4 2 2000 1500 1000 Coss 500 Crss 0 0 0 5 10 15 20 25 30 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 30 1000 10µs 10 TJ(Max)=150°C TA=25°C 100µs 1ms 1 10ms RDS(ON) limited 100ms 0.1 TJ(Max)=150°C TA=25°C Power (W) -ID (Amps) 25 -VDS (Volts) Figure 8: Capacitance Characteristics 100 0.1 1 10 100 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1 10 1 0.00001 -VDS (Volts) 10 100 10s DC 0.01 Zθ JA Normalized Transient Thermal Resistance 20 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.001 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4407A G ate C harge Test C ircuit & W aveform Vgs Qg -10V - - VD C + VD C Qgd Q gs Vds + DUT V gs Ig C harge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com