isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUS24B/C DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min)-BUS24B 450V (Min)-BUS24C APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage MAX BUS24B 850 BUS24C 1000 BUS24B 400 BUS24C 450 UNIT V V Emitter-Base Voltage 9 V IC Collector Current-Continuous 30 A ICM Collector Current-Peak 50 A IB Base Current-Continuous 6 A IBM Base Current-Peak 10 A PC Collector Power Dissipation @TC=25℃ 250 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.7 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUS24B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUS24B VCEO(SUS) Collector-Emitter Sustaining Voltage MAX IC= 0.1A ; IB= 0; L= 25mH BUS24B VBE(sat) TYP. UNIT 400 BUS24C VCE(sat) MIN V 450 IC= 20A; IB= 2.66A 1.5 Collector-Emitter Saturation Voltage V BUS24C IC= 20A; IB= 3.34A 1.5 BUS24B IC= 20A; IB= 2.66A 1.5 Base-Emitter Saturation Voltage V BUS24C IC= 20A; IB= 3.34A 1.5 ICES Collector Cutoff Current VCE=VCESMmax; VBE= 0 1 mA IEBO Emitter Cutoff Current VEB= 9V; IC= 0 10 mA hFE DC Current Gain IC= 3A ; VCE= 5V 1.0 μs 4.5 μs 0.7 μs 25 Switching Times , Resistive Load ton Turn-On Time tstg Storage Time For BUS24B IC= 20A ;IB1= -IB2= 2.66A For BUS24C IC= 20A ;IB1= -IB2= 3.34A tf Fall Time isc Website：www.iscsemi.cn