EC4409C Ordering number : ENA1197 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4409C General-Purpose Switching Device Applications Features • • 1.5V drive. Halogen Free compliance (UL94 HB). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS 30 V ±10 V ID 0.35 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% Allowable Power Dissipation PD When mounted on glass epoxy substrate (145mm✕80mm✕1.6mm) 1.4 A 0.15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS Conditions ID=1mA, VGS=0V Ratings min typ Unit max 30 V VDS=30V, VGS=0V 1 μA ±10 μA IGSS VGS(off) VGS=±8V, VDS=0V VDS=10V, ID=100μA 0.4 Forward Transfer Admittance ⏐yfs⏐ RDS(on)1 VDS=10V, ID=200mA 360 0.75 1.0 Ω Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 ID=100mA, VGS=2.5V 0.9 1.3 Ω ID=10mA, VGS=1.5V 1.8 3.6 Cutoff Voltage ID=200mA, VGS=4V 1.3 600 V mS Ω Input Capacitance Ciss VDS=10V, f=1MHz 28 pF Output Capacitance Coss VDS=10V, f=1MHz 6.0 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 3.1 pF Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51408PE TI IM TC-00001350 No. A1197-1/4 EC4409C Continued from preceding page. Parameter Symbol Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time td(off) tf Fall Time Ratings Conditions min typ Unit max See specified Test Circuit. 17.5 ns See specified Test Circuit. 34.2 ns See specified Test Circuit. 104 ns See specified Test Circuit. 55.5 ns 0.87 nC 0.39 nC 0.86 Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=350mA VDS=10V, VGS=4V, ID=350mA VDS=10V, VGS=4V, ID=350mA Diode Forward Voltage VSD IS=350mA, VGS=0V Package Dimensions 0.14 Type No. Indication unit : mm (typ) 7036-001 nC 1.2 V Electrical Connection Polarity mark (Top) Gate KB Top View Drain 0.8 Source 3 1 2 Top view *Electrodes : on the bottom Top view Polarity mark (Top) 1.0 4 Polarity Discriminating Mark Drain 0.6 Gate Source 0.5 0.3 0.2 2 4 3 1 : Gate 2 : Source 3 : Drain 4 : Drain 0.6 1 SANYO : ECSP1008-4 Bottom View Switching Time Test Circuit VDD=15V VIN 4V 0V ID=200mA RL=75Ω VOUT VIN D PW=10μs D.C.≤1% G P.G Rg EC4409C 50Ω S Rg=1.2kΩ No. A1197-2/4 EC4409C ID -- VDS VDS=10V V 2.5 2.0 180 VGS=1.5V 100 80 60 --25°C 100 120 Ta=75 °C 6.0V 150 140 25° C Drain Current, ID -- mA 160 250 200 ID -- VGS 200 8.0V Drain Current, ID -- mA 300 V 5.0V 4.0 V 350 40 50 20 0 0 0 0.2 0.4 0.6 0.8 0 1.0 Drain-to-Source Voltage, VDS -- V 1.5 2.0 2.5 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 4.0 1.0 0.5 IT11709 IT11710 RDS(on) -- Ta 3.0 3.0 ID=200mA 2.5 100mA 1.5 1.0 0.5 0 2 3 4 5 6 7 Gate-to-Source Voltage, VGS -- V 5 2 Ta 75 °C 100 7 25 5 °C 3 20 40 60 80 100 120 140 160 IT11712 IS -- VSD VGS=0V 3 2 100 7 5 3 2 10 7 5 2 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT11713 Drain Current, ID -- mA 0 2 5 tr 3 td(on) 2 0.8 1.0 1.2 1.4 IT11714 f=1MHz 5 Ciss, Coss, Crss -- pF tf 0.6 7 td (off) 100 0.4 Ciss, Coss, Crss -- VDS 100 VDS=15V VGS=4V 7 0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 3 Switching Time, SW Time -- ns 0 3 2 10 1.0 --20 1000 7 5 Source Current, IS -- mA Forward Transfer Admittance, ⏐yfs⏐ -- mS 7 °C -25 =- --40 Ambient Temperature, Ta -- °C 1000 3 0.5 IT11711 VDS=10V 2 1.0 0 --60 8 ⏐yfs⏐ -- ID 3 00mA I =1 2.5V, D = VGS A =200m 4.0V, I D V GS= 25°C 1 1.5 °C 0 A m I =10 1.5V, D V GS= 2.0 Ta=7 5 10mA 2.0 2.5 --25° C 3.5 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta=25°C Ciss 3 2 10 7 Coss 5 Crss 3 2 10 7 10 1.0 2 3 5 7 100 2 Drain Current, ID -- mA 3 5 7 1000 IT11715 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT11716 No. A1197-3/4 EC4409C VGS -- Qg 3.5 PD -- Ta 0.16 VDS=10V ID=350mA Allowable Power Dissipation, PD -- W Gate-to-Source Voltage, VGS -- V 4.0 3.0 2.5 2.0 1.5 1.0 0.5 0 When mounted on glass epoxy substrate (145mm✕80mm✕1.6mm) 0.15 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Total Gate Charge, Qg -- nC 0.8 0.9 1.0 IT11717 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT13626 Note on usage : Since the EC4409C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2008. Specifications and information herein are subject to change without notice. PS No. A1197-4/4