, One. TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon Transistors 029E9-10 D29E9J1-10J1 D33D29-30 D33D29J1-30J1 The PNP D29E9-10 series and the NPN D33D29-30 series are silicon, planar, passivated, epitaxial transistors intended for general purpose applications. These complementary pairs are especially suited for the drive stage in high power amplifiers, and for control and television circuitry. FEATURES: • Low Collector Saturation Voltage • Excellent Beta Linearity over a Wide Current Range • Heatsinking Available on All Units NOTE: Observe proper polarity on biases for PNP's and NPN's. absolute maximum ratings: (25°C) (unless otherwise specified) Voltages Collector to Emitter Emmitter to Base Collector to Base Collector to Emitter VCEO VEBO VCBO VCKS 60 5 70 70 Volts Volts Volts Volts Current Collector (Continuous) Collector (Pulsed, 300 Msec., pulse width,-2% duty cycle) Ic 750 ICM 1000 Dissipation Total Power (Free Air, 500 T,^25°C)* PT Total Power with Jl Heatsink 700 PT (Free Air, TA - 25°C) ** Total Power with Jl Heatsink 1000 (Case Temp., Tc - 25°C) *** PT Temperature -65 to +150 Storage Operating -65 to +150 Lead soldering (Yi«" ± %a" TL + 260 from case for 10 sec. max.) *Derate 4.0 mW/°C increase in ambient temperature above 25°C. **Derate 5.6 mW/°C increase in ambient temperature above 25°C. ***Derate 8.0 mW/°C increase in case temperature above 25"C. electrical characteristics: (25°C) (unless otherwise specified) NOTE: Characteristics apply to both heatsinked and non-heatsinked devices. STATIC CHARACTERISTICS Collector Cutoff Current (vco = 25V) (Vc» = 25V, Ti = 100°C) Forward Current Transfer Ratio (Io = 2mA,Vca = 2V) D29E9/D33D29 D29E10/D33D30 (Ic = 500mA, VCE = 2V) D29E9/D33D29 D29E10/D33D30 Min. ICES ICES Max. 100 15 hn h™ GO 100 '*kn **h PB 20 25 **V (B R>CEO 60 70 nA ."A 120 200 Collector Emitter Breakdown Voltage do = 10mA) (Ic = 10 f i A ) V<BH>CES Volts Volts Emitter Base Breakdown Voltage (II = 10^«A) Volts V<BR)EBO Collector Saturation Voltage do = 500 mA, IB = 50 mA) Base Saturation Voltage ** VCB<SAT> 0.75 Volts do = 500 mA, IB = 50 mA) ** V BE , S4 T, 1.2 Volts DYNAMIC CHARACTERISTICS Output Capacitance, Common Base (VcB = 10V, f = 1MHZ) Input Capacitance, Common Base (ViB = 0.5V, f = 1 MHz) Gain Bandwidth Product Ccb 15 PF C.6 55 PP do = 50 mA, VCE = 2V, f = 20 MHz) D29E9/D33D29 ft D29E10/D33D30 ft "Pulse Conditions: Pulse width < 300/Js Duty cycle < 2% 80 120 MHz