AOSMD AOD403 P-channel enhancement mode field effect transistor Datasheet

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AOD403/AOI403
30V P-Channel MOSFET
General Description
Product Summary
The AOD403/AOI403 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low gate
resistance. With the excellent thermal resistance of the
DPAK/IPAK package, this device is well suited for high
current load applications.
VDS
ID (at VGS= -20V)
-30V
-70A
RDS(ON) (at VGS= -20V)
< 6.2mΩ (< 6.7mΩ∗)
RDS(ON) (at VGS = -10V)
< 8mΩ
(< 8.5mΩ∗)
100% UIS Tested
100% Rg Tested
TO252
DPAK
Top View
TO251A
IPAK
Bottom View
D
Bottom View
Top View
D
D
S
G
G
G
S
Gate-Source Voltage
VGS
TC=25°C
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
A
IAS, IAR
-50
A
EAS, EAR
125
mJ
90
W
45
2.5
RθJA
RθJC
W
1.6
TJ, TSTG
Symbol
t ≤ 10s
A
-12
PDSM
TA=70°C
V
-15
PD
TC=100°C
±25
-200
IDSM
TA=70°C
Units
V
-55
IDM
TA=25°C
Continuous Drain
Current
Maximum
-30
-70
ID
TC=100°C
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain
Current G
D
D
S
G
-55 to 175
Typ
16
41
0.9
°C
Max
20
50
1.6
Units
°C/W
°C/W
°C/W
* package TO251A
Rev.9.0: July 2013
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
Typ
Max
V
VDS=-30V, VGS=0V
-1
TJ=55°C
-5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±25V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-200
Units
µA
±100
nA
-2.5
-3.5
V
5.1
6.2
7.6
9.2
6.2
8
mΩ
VGS=-20V, ID=-20A
TO251A
5.6
6.7
mΩ
VGS=-10V, ID=-20A
TO251A
6.7
8.5
mΩ
Forward Transconductance
VDS=-5V, ID=-20A
42
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous CurrentG
VGS=-20V, ID=-20A
TO252
VGS=-10V, ID=-20A
TO252
RDS(ON)
gFS
Static Drain-Source On-Resistance
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
VGS=-10V, VDS=-15V, ID=-20A
A
-0.7
mΩ
S
-1
V
-70
A
2310
2890
3500
pF
410
585
760
pF
280
470
660
pF
1.9
3.8
5.7
Ω
40
51
61
nC
10
12
14
nC
16
22
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-20A, dI/dt=100A/µs
14
18
22
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs
9
11
13
10
VGS=-10V, VDS=-15V, RL=0.75Ω,
RGEN=3Ω
16
ns
12
ns
45
ns
22
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.9.0: July 2013
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AOD403/AOI403
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
-10V
VDS=-5V
-6V
80
80
-5V
60
-ID(A)
-ID (A)
60
40
125°C
40
-4.5V
25°C
20
20
VGS=-4V
0
0
0
1
2
3
4
1.5
3
3.5
4
4.5
5
5.5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
5
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
10
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
2.5
6
1.8
8
VGS=-10V
6
4
VGS=-20V
2
VGS=-20V
ID=-20A
1.6
1.4
17
5
2
VGS=-10V
10
1.2
ID=-20A
1
0.8
0
15
20
25
30
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
5
10
0
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
20
1.0E+02
ID=-20A
1.0E+01
40
15
1.0E+00
125°C
125°C
-IS (A)
RDS(ON) (mΩ
Ω)
2
10
5
1.0E-01
25°C
1.0E-02
1.0E-03
25°C
1.0E-04
0
1.0E-05
0
10
15
20
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.9.0: July 2013
5
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
5000
VDS=-15V
ID=-20A
8
4000
Capacitance (pF)
-VGS (Volts)
Ciss
6
4
3000
2000
Coss
2
1000
0
0
0
10
20
30
40
50
Qg (nC)
Figure 7: Gate-Charge Characteristics
60
0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
400
1000.0
10µs
RDS(ON)
limited
10.0
DC
320
10µs
1ms
10ms
1.0
240
160
TJ(Max)=175°C
TC=25°C
0.1
TJ(Max)=175°C
TC=25°C
100µs
Power (W)
100.0
-ID (Amps)
Crss
80
0.0
0
0.01
0.1
1
10
-VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.6°C/W
40
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.9.0: July 2013
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
TA=25°C
TA=100°C
100.0
TA=150°C
Power Dissipation (W)
-IAR (A) Peak Avalanche Current
1000.0
120
90
60
30
TA=125°C
0
10.0
1
10
100
0
1000
25
50
75
100
175
10000
80
70
TA=25°C
1000
60
Power (W)
Current rating ID(A)
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
Time in avalanche, tA (ms)
Figure 12: Single Pulse Avalanche capability
(Note C)
50
40
30
100
10
20
10
1
0
0.00001
0
10
Zθ JA Normalized Transient
Thermal Resistance
125
1
25
50
75
100
125
150
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
0.1
10
1000
0
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to18
Ambient (Note H)
175
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=50°C/W
40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.9.0: July 2013
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Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgs
Vds
Qgd
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
td(on)
Vgs
-
DUT
Vgs
td(off)
tr
tf
90%
Vdd
VDC
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.9.0: July 2013
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 6 of 6
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