DPG60C200QB HiPerFRED² VRRM = 200 V I FAV = 2x 30 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG60C200QB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-3P ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline compatible with TO-247 ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131126b DPG60C200QB Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 200 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 200 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case typ. VR = 200 V TVJ = 25°C 1 µA VR = 200 V TVJ = 150°C 0.1 mA TVJ = 25°C 1.34 V 1.63 V 1.06 V IF = forward voltage drop min. 30 A IF = 60 A IF = 30 A IF = 60 A TVJ = 150 °C TC = 140°C rectangular 1.39 V T VJ = 175 °C 30 A TVJ = 175 °C 0.70 V d = 0.5 for power loss calculation only 10.5 mΩ 0.95 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 150 V f = 1 MHz TVJ = 25°C 42 pF I RM max. reverse recovery current TVJ = 25 °C 3 A t rr reverse recovery time IF = IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved K/W 0.25 TC = 25°C 30 A; VR = 130 V -di F /dt = 200 A/µs 160 360 W A TVJ = 125°C 7 A TVJ = 25 °C 35 ns TVJ = 125°C 55 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20131126b DPG60C200QB Package Ratings TO-3P Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 °C -55 150 °C 150 °C 1) Weight 5 MD mounting torque FC mounting force with clip Product Marking Logo Part No. Assembly Line Assembly Code g 0.8 1.2 Nm 20 120 N Part number D P G 60 C 200 QB IXYS Zyyww = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-3P (3) abcd Date Code Ordering Standard Part Number DPG60C200QB Similar Part DPG60C200HB DPF60C200HB DPF60C200HJ Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG60C200QB Package TO-247AD (3) TO-247AD (3) ISOPLUS247 (3) * on die level Delivery Mode Tube Code No. 502213 Voltage class 200 200 200 T VJ = 175 °C Fast Diode V 0 max threshold voltage 0.7 V R 0 max slope resistance * 7.9 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20131126b DPG60C200QB Outlines TO-3P 1 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131126b DPG60C200QB Fast Diode 16 80 70 0.4 14 IF = 60 A 30 A 15 A 60 50 IF TVJ = 150°C [A] 40 Qrr 30 [μC] IF = 60 A 30 A 15 A 12 0.3 IRM 10 8 [A] 0.2 20 6 25°C TVJ = 125°C VR = 130 V 10 0.1 0.0 0.4 0.8 1.2 1.6 2 0 2.0 TVJ = 125°C VR = 130 V 4 V F [ V] 200 400 600 0 200 -diF /dt [A/μs] Fig. 1 Forward current IF versus VF 600 70 TVJ = 125°C VR = 130 V 1.2 600 Fig. 3 Typ. reverse recov. current IRM versus -diF /dt Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 1.4 400 -diF /dt [A/μs] VFR tfr 12 500 10 400 8 300 6 60 1.0 Kf 0.8 0.6 50 I = 60 A F [ns] 30 A 15 A IRM VFR tfr trr [V] [ns] 200 4 40 0.4 TVJ = 125°C VR = 130 V IF = 30 A 100 Qrr 0.2 0 30 40 80 120 160 0 0 200 400 600 TVJ [°C] -diF /dt [A/μs] Fig. 4 Typ. dynamic parameters Qrr, IRM versus TVJ Fig. 5 Typ. reverse recov. time trr versus -diF /dt 14 0 200 0 600 400 -diF /dt [A/μs] Fig. 6 Typ. forward recov. voltage VFR and tfr versus diF /dt 1.0 TVJ = 125°C VR = 130 V 12 2 0.8 10 IF = 15 A Erec 8 0.6 30 A 60 A ZthJC [μJ] 6 0.4 [K/W] 4 0.2 2 0.0 0 200 400 600 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1 10 100 Rthi [K/W] ti [s] 0.1311 0.1377 0.3468 0.2394 0.095 0.0018 0.002 0.012 0.07 0.345 1000 10000 t [ms] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20131126b