DNB63 DNB63 Rectifier Diode Replaces January 2000 version, DS4179-5.0 DS4179-6.0 August 2001 APPLICATIONS KEY PARAMETERS ■ Rectification VRRM 1500V ■ Freewheel Diode IF(AV) 5794A IFSM 57000A ■ DC Motor Control ■ Power Supplies ■ Welding ■ Battery Chargers FEATURES ■ Double Side Cooling ■ High Surge Capability VOLTAGE RATINGS Type Number DNB63 15 DNB63 14 DNB63 13 DNB63 12 DNB63 11 Repetitive Peak Reverse Voltage VRRM V 1500 1400 1300 1200 1100 Conditions VRSM = VRRM + 100V Outline type code: DO200AD See Package Details for further information. Fig. 1 Package outline Lower voltage grades available. 1/7 www.dynexsemi.com DNB63 CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Parameter Conditions Max. Units 5794 A Double Side Cooled Half wave resistive load IF(AV) Mean forward current IF(RMS) RMS value - 9101 A Continuous (direct) forward current - 7934 A 4230 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 6645 A Continuous (direct) forward current - 5468 A Conditions Max. Units IF Half wave resistive load Tcase = 100oC unless otherwise stated Symbol Parameter Double Side Cooled IF(AV) Mean forward current Half wave resistive load, Tcase = 100oC 4850 A IF(RMS) RMS value Tcase = 100oC 7615 A Continuous (direct) forward current Tcase = 100oC 6600 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current Half wave resistive load, Tcase = 100oC 3540 A IF(RMS) RMS value Tcase = 100oC 5560 A Continuous (direct) forward current Tcase = 100oC 4500 A IF 2/7 www.dynexsemi.com DNB63 SURGE RATINGS Parameter Symbol IFSM I2t IFSM I2t Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current Conditions Max. Units 10ms half sine; Tcase = 190oC 52.0 kA VR = 50% VRRM - 1/4 sine 13.5 x 106 A2s 10ms half sine; Tcase = 190oC 57.0 kA VR = 0 16.2 x 106 A2s I2t for fusing THERMAL AND MECHANICAL DATA Min. Max. Units dc - 0.013 o Anode dc - 0.021 o Cathode dc - 0.034 o Double side - 0.003 o Single side - 0.006 o Forward (conducting) - 200 o C Reverse (blocking) - 190 o C Storage temperature range -55 190 o C Clamping force 40.0 48.0 Parameter Symbol Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 45.0kN with mounting compound C/W C/W C/W Virtual junction temperature kN 3/7 www.dynexsemi.com DNB63 CHARACTERISTICS Symbol Conditions Parameter Min. Max. Units VFM Forward voltage At 3000A peak, Tcase = 25oC - 1.05 V IRRM Peak reverse current At VRRM, Tcase = 190oC - 60 mA QS Total stored charge - 4000 µC - 600 A - 20 µs IF = 1000A, dIRR/dt = 50A/µs IRM Peak recovery current Tcase = 175˚C, VR = 100V trr Reverse recovery time VTO rT Threshold voltage At Tvj = 190˚C - 0.75 V Slope resistance At Tvj = 190˚C - 0.046 mΩ CURVES 10000 10000 Measured under pulse conditions 6 phase 3 phase Half wave dc 8000 Mean power dissipation - (W) Instantaneous forward current, IF - (A) 8000 6000 Tj = 190˚C 4000 6000 4000 2000 2000 0 0.5 1.0 1.5 Instantaneous forward voltage, VF - (V) 2.0 0 0 Fig.2 Maximum (limit) forward characteristics VFM Equation:VFM = A + Bln (IF) + C.IF+D.√IF 2000 4000 6000 Mean forward current, IF(AV) - (A) 8000 Fig.3 Dissipation curves Where A = 0.517184 B = 0.035583 C = 4.94 x 10–5 D = –0.0011 these values are valid for Tj = 125˚C for IF 500A to 10000A 4/7 www.dynexsemi.com DNB63 0.1 140 I2t = Î2 x t Conduction 2 d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 15 80 60 40 I2t 10 20 0 1 10 ms 1 2 3 5 10 20 5 50 Cycles at 50Hz Duration Fig.4 Surge (non-repetitive) forward current vs time (with 50% VRRM at Tcase 190˚C) Thermal impedance - (˚C/W) 100 I2t value - (A2s x 106) Peak half sine forward current - (kA) 120 Effective thermal resistance Junction to case ˚C/W Double side 0.0130 0.0141 0.0170 0.0200 Anode side 0.0210 0.0221 0.0250 0.0280 0.01 Anode side cooled Double side cooled 0.001 0.0001 0.001 0.01 0.1 1 Time - (s) 10 100 Fig.5 Maximum (limit) transient thermal impedance junction to case 5/7 www.dynexsemi.com DNB63 PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole Ø3.6 x 2.0 deep (One in each electrode) Cathode Ø102 max 32.9 34.1 Ø63nom Ø63nom Anode Ø92 max Nominal weight: 1100g Clamping force: 45kN ±10% Package outine type code: DO200AD Note: 1. Package maybe supplied with pins and/or tags. 6/7 www.dynexsemi.com DNB63 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4179-6 Issue No. 6.0 August 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. 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