Jiangsu CJU60N08 N-channel power mosfet Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L(4R) Plastic-Encapsulate MOSFETS
CJU60N08
N-Channel Power MOSFET
V(BR)DSS
RDS(on)MAX
ID
80V
8.5mΩ@10V
60A
TO-252-2L(4R)
GENERAL DESCRIPTION
The CJU60N08 uses advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of
applications.
FEATURE
VDS =80V,ID =60A

RDS(ON) < 8.5mΩ @ VGS=10V

Good stability and uniformity with high EAS

Excellent package for good heat dissipation

High density cell design for ultra low Rdson

Special process technology for high ESD capability

Fully characterized avalanche voltage and current
MARKING
XXX
2
1
3
APPLICATION

CJU 60 N 0 8
1. GATE
2. DRAIN
3. SOURCE

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply
EQUIV
ALENT CIRCUIT
CJU60N08= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
Drain-Source Voltage
VDS
80
Gate-Source Voltage
VGS
±20
Continuous Drain Current
ID
60
Pulsed Drain Current
IDM
240
Single Pulsed Avalanche Energy (note1)
EAS
300
mJ
Thermal Resistance from Junction to Ambient
RθJA
100
℃/W
Junction Temperature
TJ
150
Storage Temperature Range
TSTG
-55 ~+150
TL
260
Maximum lead temperature for soldering purposes ,
1/8”from case for 5 seconds
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Ta =25 Я unless otherwise specified
Symbol
Test Condition
Min
V(BR) DSS
VGS = 0V, ID =250µA
80
Zero gate voltage drain current
IDSS
VDS =80V, VGS =0V
1
µA
Gate-body leakage current
IGSS
VDS =0V, VGS =±20V
±100
nA
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =250µA
3
4
V
Static drain-source on-sate resistance
RDS(on)
VGS =10V, ID =30A
7.0
8.5
mΩ
Parameter
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
V
On characteristics (note2)
2
Dynamic characteristics (note 3)
Input capacitance
4400
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
VDS =25V,VGS =0V,
f =1MHz
340
pF
260
Switching characteristics (note 3)
Total gate charge
100
Qg
VDS=30V, VGS=10V,
20
Gate-source charge
Qgs
Gate-drain charge
Qgd
30
Turn-on delay time
td(on)
18
Turn-on rise time
Turn-off delay time
Turn-off fall time
ID=30A
VDD=30V,VGS=10V,
tr
RG=2.5Ω, ID=2A,
td(off)
RL=15Ω
nC
12
ns
56
15
tf
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note2)
Continuous drain-source diode forward
current
Pulsed drain-source diode forward current
VSD
VGS =0V, IS=30A
1.2
V
IS
60
A
ISM
240
A
Notes:
1.
L=0.5mH,VDD=40V,VG=10V,RG=25Ω,Starting TJ=25℃.
2.
Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
3.
Guaranteed by design, not subject to production.
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Typical Characteristics
Transfer Characteristics
Output Characteristics
1000
1000
VGS= 15,10,8V
Ta=25℃
VDS=25.0V
Pulsed
Pulsed
ID
ID
VGS=5V
VGS= 4.8V
DRAIN CURRENT
VGS= 5.5V
100
DRAIN CURRENT
(A)
(A)
VGS= 6V
VGS= 4.5V
10
100
Ta=25℃
10
1
1
0.1
0.1
1
10
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
100
VDS
2
(V)
3
4
5
6
GATE TO SOURCE VOLTAGE
VGS
7
RDS(ON)—— VGS
ID
12
40
Ta=25℃
Pulsed
ID=30A
Pulsed
(m)
(m)
10
ON-RESISTANCE
30
RDS(ON)
6
ON-RESISTANCE
RDS(ON)
8
VGS=10V
4
20
Ta=100℃
10
2
0
10
8
(V)
Ta=25℃
0
20
30
40
50
DRAIN CURRENT
60
ID
70
80
4
(A)
6
8
GATE TO SOURCE VOLTAGE
VGS
10
(V)
Threshold Voltage
IS —— VSD
4.0
100
Pulsed
3.5
VTH
Ta=100℃
Ta=25℃
1
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
(V)
10
0.1
0.01
3.0
2.5
ID=250uA
2.0
1.5
1E-3
0.0
0.2
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
1.0
VSD (V)
1.2
1.4
1.0
25
50
75
JUNCTION TEMPERATURE
100
TJ
125
( ℃)
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Symbol
A
A1
B
b
c
c1
D
D1
E
e
e1
M
N
L
L1
L2
V
ĭ
Dimensions In Millimeters
Max.
Min.
2.380
2.200
0.000
0.100
0.800
1.400
0.710
0.810
0.460
0.560
0.460
0.560
6.500
6.700
5.130
5.460
6.000
6.200
2.286 TYP.
4.327
4.727
1.778REF.
0.762REF.
9.800
10.400
2.9REF.
1.400
1.700
4.830 REF.
Dimensions In Inches
Min.
Max.
0.087
0.094
0.000
0.004
0.031
0.055
0.028
0.032
0.018
0.022
0.018
0.022
0.256
0.264
0.202
0.215
0.236
0.244
0.090 TYP.
0.170
0.186
0.070REF.
0.018REF.
0.386
0.409
0.114REF.
0.055
0.067
0.190 REF.
72 5 /6XJJHVWHG3DG/D\RXW
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