BCR08AM-12A Triac Low Power Use REJ03G0343-0200 Rev.2.00 Nov 30, 2007 Features • • • • IT (RMS) : 0.8 A VDRM : 600 V IRGTI, IRGT III : 5 mA Planar Passivation Type Outline RENESAS Package code: PRSS0003EA-A (Package name: TO-92) 2 3 13 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 2 Applications Electric fan, air cleaner, and other general purpose control applications Maximum Ratings Parameter Symbol Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 REJ03G0343-0200 Page 1 of 6 Rev.2.00 Nov 30, 2007 VDRM VDSM Voltage class 12 600 720 Unit V V BCR08AM-12A Parameter RMS on-state current Symbol IT (RMS) Ratings 0.8 Unit A Surge on-state current ITSM 8 A I2 t 0.26 A2s PGM PG (AV) VGM IGM Tj Tstg — 1 0.1 6 0.5 – 40 to +125 – 40 to +125 0.23 W W V A °C °C g Symbol IDRM VTM Min. — — Typ. — — Max. 1.0 2.0 Unit mA V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine full wave 360° conduction, Tc = 56°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger currentNote2 Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 1.2 A, Instantaneous measurement ΙΙ VRGTΙ — — 2.0 V ΙΙΙ VRGTΙΙΙ — — 2.0 V ΙΙ IRGTΙ — — 5 mA ΙΙΙ IRGTΙΙΙ — — 5 mA VGD Rth (j-c) 0.1 — — — — 60 V °C/W Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 0.5 — — V/µs Tj = 125°C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 0.4 A/ms 3. Peak off-state voltage VD = 400 V REJ03G0343-0200 Page 2 of 6 Rev.2.00 Nov 30, 2007 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR08AM-12A Performance Curves Maximum On-State Characteristics 10 Surge On-State Current (A) Tj = 25°C 3 2 100 7 5 3 2 Gate Voltage (V) 3 2 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 2.0 2.5 3.0 3.5 4.0 5 4 3 2 1 2 3 4 5 7 101 2 3 4 5 7 102 Gate Trigger Current vs. Junction Temperature PGM = 1W PG(AV) = 0.1W IRGT I, IRGT III VGD = 0.1V 3 5 7 101 2 3 5 7 10 2 2 3 5 7 103 103 7 5 Typical Example 3 2 102 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case, Junction to ambient) 103 7 5 Typical Example 3 2 102 7 5 3 2 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) REJ03G0343-0200 Page 3 of 6 6 Gate Characteristics ( II and III) IGM = 0.5A 101 7 Conduction Time (Cycles at 60Hz) VGT 100 7 5 3 2 8 On-State Voltage (V) VGM = 6V 101 7 5 3 2 10–1 7 5 3 1.5 9 0 100 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) 10–1 1.0 Rev.2.00 Nov 30, 2007 Transient Thermal Impedance (°C/W) On-State Current (A) 101 7 5 Rated Surge On-State Current 2 3 4 5 310 2 3 5 7 10 2 3 5 7 10 2 3 5 7 10 2 Junction to ambient 102 7 5 Junction to case 3 2 101 7 5 3 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR08AM-12A Allowable Case Temperature vs. RMS On-State Current Maximum On-State Power Dissipation 160 1.6 360° Conduction 1.4 Resistive, 1.2 inductive loads 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Curves apply regardless of conduction angle 140 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Ambient Temperature (°C) Case Temperature (°C) 1.8 Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) On-State Power Dissipation (W) 2.0 105 7 5 3 2 Typical Example 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 Latching Current vs. Junction Temperature 102 103 Typical Example 7 5 Latching Current (mA) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) 20 40 60 80 100 120 140 Junction Temperature (°C) Holding Current vs. Junction Temperature 3 2 102 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) REJ03G0343-0200 Page 4 of 6 0 Rev.2.00 Nov 30, 2007 7 5 3 2 Distribution T2+, G– Typical Example 101 7 5 3 2 100 7 5 3 2 10–1 T2–, G– Typical Example –40 0 40 80 120 Junction Temperature (°C) 160 BCR08AM-12A Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 Typical Example Tj = 125°C 140 120 I Quadrant 100 80 60 40 III Quadrant 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Commutation Characteristics Gate Trigger Current vs. Gate Current Pulse Width Typical Example Tj = 125°C IT = 1A τ = 500µs VD = 200V 3 2 100 7 5 III Quadrant Minimum Characteristics Value 10–1 10–1 2 I Quadrant 5 7 100 3 2 3 5 7 101 Rate of Decay of On-State Commutating Current (A/ms) 6Ω 6Ω A 6V V 330Ω Test Procedure II Rev.2.00 A 6V V 330Ω Test Procedure III Nov 30, 2007 103 7 5 3 2 Typical Example IRGT I IRGT III 102 7 5 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits REJ03G0343-0200 Page 5 of 6 160 Rate of Rise of Off-State Voltage (V/µs) 101 7 5 3 2 Breakover Voltage vs. Rate of Rise of Off-State Voltage Junction Temperature (°C) Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Breakover Voltage vs. Junction Temperature BCR08AM-12A Package Dimensions Package Name TO-92* JEITA Package Code SC-43A RENESAS Code PRSS0003EA-A Previous Code MASS[Typ.] 0.23g Unit: mm φ5.0Max 11.5Min 5.0Max 4.4 1.25 1.25 3.6 1.1 Circumscribed circle φ0.7 Order Code Lead form Straight type Lead form Form A8 Standard packing Vinyl sack Vinyl sack Taping Quantity 500 500 2000 Standard order code Type name Type name – Lead forming code Type name – TB Note : Please confirm the specification about the shipping in detail. REJ03G0343-0200 Page 6 of 6 Rev.2.00 Nov 30, 2007 Standard order code example BCR08AM-12A BCR08AM-12A-A6 BCR08AM-12A-TB Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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