bq20z45-R1 www.ti.com SLUS992 – DECEMBER 2009 SBS 1.1-Compliant Gas Gauge and Protection Enabled With Impedance Track™ Check for Samples: bq20z45-R1 FEATURES 1 • 2 • • • • • • • • • • Next Generation Patented Impedance Track™ Technology Accurately Measures Available Charge in Li-Ion and Li-Polymer Batteries – Better Than 1% Error Over the Lifetime of the Battery Supports the Smart Battery Specification SBS V1.1 Flexible Configuration for 2 to 4 Series Li-Ion and Li-Polymer Cells Powerful 8-Bit RISC CPU With Ultralow Power Modes Full Array of Programmable Protection Features – Voltage, Current, and Temperature Satisfies JEITA Guidelines Added Flexibility to Handle More Complex Charging Profiles Lifetime Data Logging Supports SHA-1 Authentication Complete Battery Protection and Gas Gauge Solution in One Package Available in a 38-Pin TSSOP (DBT) package DESCRIPTION The bq20z45-R1 SBS-compliant gas gauge and protection IC is a single IC solution designed for battery-pack or in-system installation. The bq20z45-R1 measures and maintains an accurate record of available charge in Li-ion or Li-polymer batteries using its integrated high-performance analog peripherals, monitors capacity change, battery impedance, open-circuit voltage, and other critical parameters of the battery pack as well and reports the information to the system host controller over a serial-communication bus. Together with the integrated analog front-end (AFE) short-circuit and overload protection, the bq20z45-R1 maximizes functionality and safety while minimizing external component count, cost, and size in smart battery circuits. The implemented Impedance Track™ gas gauging technology continuously analyzes the battery impedance, resulting in superior gas-gauging accuracy. This enables remaining capacity to be calculated with discharge rate, temperature, and cell aging all accounted for during each stage of every cycle with high accuracy. APPLICATIONS • • • Notebook PCs Medical and Test Equipment Portable Instrumentation Table 1. AVAILABLE OPTIONS TA –40°C to 85°C (1) (2) (3) PACKAGE (1) 38-PIN TSSOP (DBT) Tube 38-PIN TSSOP (DBT) Tape and Reel bq20z45-R1DBT (2) bq20z45-R1DBTR (3) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. A single tube quantity is 50 units. A single reel quantity is 2000 units 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Impedance Track is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009, Texas Instruments Incorporated bq20z45-R1 SLUS992 – DECEMBER 2009 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. SYSTEM PARTITIONING DIAGRAM Fuse Blow Detection and Logic SMBD SMBD SMBC SMBC VSS BAT VCC PACK CHG DSG ZVCHG GPOD PMS PFIN SAFE Pack + RBI Oscillator Pre Charge FET & GPOD Drive N-Channel FET Drive Power Mode Control AFE HW Control Watchdog MSRT RESET SMB 1.1 System Control ALERT VCELL+ Voltage Measurement Cell Balancing VC1 VC1 VDD VC2 VC2 OUT VC3 VC3 CD VC4 VC4 VC5 ASRN HW Over Current & Short Circuit Protection Coloumb Counter GSRN Over Current Protection Impedance Track ™ Gas Gauging ASRP Over & Under Voltage Protection TS2 Temperature Measurement TOUT SHA-1 Authentication Over Temperature Protection TS1 Charging Algorithm Cell Voltage Multiplexer GSRP Data Flash Memory GND bq294xx REG33 Regulators REG25 bq20z45–R1 Pack RSNS 5 mW - 20 mW typ. bq20z45-R1 DBT PACKAGE (TOP VIEW) DSG PACK VCC ZVCHG GPOD PMS VSS REG33 TOUT VCELL+ ALERT PRES TS1 TS2 PFIN SAFE SMBD SMBC NC 2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 CHG BAT VC1 VC2 VC3 VC4 VC5 ASRP ASRN RESET VSS RBI REG25 VSS MRST GSRN GSRP VSS VSS Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): bq20z45-R1 bq20z45-R1 www.ti.com SLUS992 – DECEMBER 2009 PIN FUNCTIONS PIN I/O (1) DESCRIPTION NO. NAME 1 DSG O 2 PACK IA, P 3 VCC P Positive device supply input. Connect to the center connection of the CHG FET and DSG FET to ensure device supply either from battery stack or battery pack input 4 ZVCHG O P-chan pre-charge FET gate drive 5 GPOD OD 6 PMS I Pre-charge mode setting input. Connect to PACK to enable 0v pre-charge using charge FET connected at CHG pin. Connect to VSS to disable 0V pre-charge using charge FET connected at CHG pin. 7 VSS P Negative device power supply input. Connect all VSS pins together for operation of device 8 REG33 P 3.3V regulator output. Connect at least a 2.2μF capacitor to REG33 and VSS 9 TOUT P Thermistor bias supply output 10 VCELL+ - Internal cell voltage multiplexer and amplifier output. Connect a 0.1μF capacitor to VCELL+ and VSS 11 ALERT OD 12 PRES I System / Host present input. 13 TS1 IA Temperature sensor 1 input 14 TS2 IA Temperature sensor 2 input 15 PFIN I 16 SAFE OD Blow fuse signal output 17 SMBD I/OD SMBus data line 18 SMBC I/OD SMBus clock line 19 NC - Not connected 20, 21, 25, 28 VSS P Negative device power supply input. Connect all VSS pins together for operation of device 22 GSRP IA Coulomb counter differential input. Connect to one side of the sense resistor 23 GSRN IA Coulomb counter differential input. Connect to one side of the sense resistor (1) High side N-chan discharge FET gate drive Battery pack input voltage sense input. It also serves as device wake up when device is in shutdown mode. High voltage general purpose open drain output. Can be configured to be used in pre-charge condition Alert output. In case of short circuit condition, overload condition and watchdog time out this pin will be triggered. Fuse blow detection input 24 MRST I Reset input for internal CPU core. connect to RESET for correct operation of device 26 REG25 P 2.5V regulator output. Connect at least a 1μF capacitor to REG25 and VSS 27 RBI P RAM backup input. Connect a capacitor to this pin and VSS to protect loss of RAM data in case of short circuit condition 29 RESET O Reset output. Connect to MSRT. 30 ASRN IA Short circuit and overload detection differential input. Connect to sense resistor 31 ASRP IA Short circuit and overload detection differential input. Connect to sense resistor 32 VC5 IA, P Cell voltage sense input and cell balancing input for the negative voltage of the bottom cell in cell stack. 33 VC4 IA, P Cell voltage sense input and cell balancing input for the positive voltage of the bottom cell and the negative voltage of the second lowest cell in cell stack. 34 VC3 IA, P Cell voltage sense input and cell balancing input for the positive voltage of the second lowest cell in cell stack and the negative voltage of the second highest cell in 4 cell applications. 35 VC2 IA, P Cell voltage sense input and cell balancing input for the positive voltage of the second highest cell and the negative voltage of the highest cell in 4 cell applications. Connect to VC3 in 2 cell stack applications 36 VC1 IA, P Cell voltage sense input and cell balancing input for the positive voltage of the highest cell in cell stack in 4 cell applications. Connect to VC2 in 3 or 2 cell stack applications 37 BAT I, P 38 CHG O Battery stack voltage sense input High side N-chan charge FET gate drive I = Input, IA = Analog input, I/O = Input/output, I/OD = Input/Open-drain output, O = Output, OA = Analog output, P = Power Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): bq20z45-R1 3 bq20z45-R1 SLUS992 – DECEMBER 2009 www.ti.com ABSOLUTE MAXIMUM RATINGS over operating free-air temperature (unless otherwise noted) (1) PIN UNIT BAT, VCC VSS Supply voltage range VIN Input voltage range –0.3 V to 34 V PACK, PMS –0.3 V to 34 V VC(n)-VC(n+1); n = 1, 2, 3, 4 –0.3 V to 8.5 V VC1, VC2, VC3, VC4 –0.3 V to 34 V VC5 –0.3 V to 1 V PFIN, SMBD, SMBC –0.3 V to 6 V TS1, TS2, SAFE, VCELL+, PRES; ALERT –0.3 V to V(REG25) + 0.3 V MRST, GSRN, GSRP, RBI –0.3 V to V(REG25) + 0.3 V ASRN, ASRP –1 V to 1 V DSG, CHG, GPOD –0.3 V to 34 V ZVCHG VOUT Output voltage range –0.3 V to V (BAT) TOUT, ALERT, REG33 –0.3 V to 6 V RESET –0.3 V to 7 V REG25 –0.3 V to 2.75 V ISS Maximum combined sink current for input pins TA Operating free-air temperature range –40°C to 85°C TF Functional temperature –40°C to 100°C Tstg Storage temperature range –65°C to 150°C (1) PRES, PFIN, SMBD, SMBC 50 mA Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range (unless otherwise noted) PIN MIN VSS Supply voltage VCC, BAT 4.5 V(STARTUP) Minimum startup voltage VCC, BAT, PACK 5.5 VIN Input Voltage Range NOM MAX 25 UNIT V V VC(n)-VC(n+1); n = 1,2,3,4 0 5 V VC1, VC2, VC3, VC4 0 VSS V VC5 0 0.5 V –0.5 0.5 V PACK, PMS 0 25 V 0 25 V 1 mA ASRN, ASRP V(GPOD) Output Voltage Range GPOD I(GPOD) Drain Current (1) GPOD C(REG25) 2.5V LDO Capacitor REG25 1 µF C(REG33) 3.3V LDO Capacitor REG33 2.2 µF C(VCELL+) Cell Voltage Output Capacitor VCELL+ 0.1 µF R(PACK) PACK input block resistor (2) PACK 1 kΩ (1) (2) 4 Use an external resistor to limit the current to GPOD to 1mA in high voltage application. Use an external resistor to limit the inrush current PACK pin required. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): bq20z45-R1 bq20z45-R1 www.ti.com SLUS992 – DECEMBER 2009 ELECTRICAL CHARACTERISTICS over operating free-air temperature range (unless otherwise noted), TA = –40°C to 85°C, V(REG25) = 2.41 V to 2.59 V, V(BAT) = 14 V, C(REG25) = 1 µF, C(REG33) = 2.2 µF; typical values at TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENT I(NORMAL) Firmware running I(SLEEP) Sleep Mode I(SHUTDOWN) 550 µA CHG FET on; DSG FET on 124 µA CHG FET off; DSG FET on 90 µA CHG FET off; DSG FET off 52 Shutdown Mode 0.1 µA 1 µA 1 µA 1.25 10 mV V (WAKE) = 1 mV; I(WAKE)= 0, RSNS1 = 0, RSNS0 = 1; -0.7 0.7 V(WAKE) = 2.25 mV; I(WAKE) = 1, RSNS1 = 0, RSNS0 = 1; I(WAKE) = 0, RSNS1 = 1, RSNS0 = 0; -0.8 0.8 V(WAKE) = 4.5 mV; I(WAKE) = 1, RSNS1 = 1, RSNS0 = 1; I(WAKE) = 0, RSNS1 = 1, RSNS0 = 0; -1.0 1.0 V(WAKE) = 9 mV; I(WAKE) = 1, RSNS1 = 1, RSNS0 = 1; -1.4 1.4 SHUTDOWN WAKE; TA = 25°C (unless otherwise noted) I(PACK) Shutdown exit at VSTARTUP threshold SRx WAKE FROM SLEEP; TA = 25°C (unless otherwise noted) V(WAKE) V(WAKE_ACR) Positive or negative wake threshold with 1.00 mV, 2.25 mV, 4.5 mV and 9 mV programmable options Accuracy of V(WAKE) V(WAKE_TCO) Temperature drift of V(WAKE) accuracy t(WAKE) Time from application of current and wake of bq20z45-R1 mV 0.5 %/°C 1 10 ms 1.70 1.80 1.90 V 50 150 250 mV 100 250 560 µs 250 500 1000 ms 50 100 150 µs 2.41 2.5 2.59 V POWER-ON RESET VIT– Negative-going voltage input Voltage at REG25 pin Vhys Hysteresis VIT+ – VIT- tRST RESET active low time active low time after power up or watchdog reset WATCHDOG TIMER tWDTINT Watchdog start up detect time tWDWT Watchdog detect time 2.5V LDO; I(REG33OUT) = 0 mA; TA = 25°C (unless otherwise noted) V(REG25) Regulator output voltage 4.5 < VCC or BAT < 25 V; I(REG25OUT) ≤ 16 mA; TA = –40°C to 100°C ΔV(REG25TEMP) Regulator output change with temperature I(REG25OUT) = 2 mA; TA = –40°C to 100°C ΔV(REG25LINE) Line regulation 5.4 < VCC or BAT < 25 V; I(REG25OUT) = 2 mA ΔV(REG25LOAD) Load Regulation I(REG25MAX) Current Limit ±0.2 % 3 10 0.2 mA ≤ I(REG25OUT) ≤ 2 mA 7 25 0.2 mA ≤ I(REG25OUT) ≤ 16 mA 25 50 5 40 75 mA 3 3.3 3.6 V drawing current until REG25 = 2 V to 0 V mV mV 3.3V LDO; I(REG25OUT) = 0 mA; TA = 25°C (unless otherwise noted) V(REG33) Regulator output voltage 4.5 < VCC or BAT < 25 V; I(REG33OUT) ≤ 25 mA; TA = –40°C to 100°C ΔV(REG33TEMP) Regulator output change with temperature I(REG33OUT) = 2 mA; TA = –40°C to 100°C ΔV(REG33LINE) Line regulation 5.4 < VCC or BAT < 25 V; I(REG33OUT) = 2 mA ±0.2 3 % 10 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): bq20z45-R1 mV 5 bq20z45-R1 SLUS992 – DECEMBER 2009 www.ti.com ELECTRICAL CHARACTERISTICS (continued) over operating free-air temperature range (unless otherwise noted), TA = –40°C to 85°C, V(REG25) = 2.41 V to 2.59 V, V(BAT) = 14 V, C(REG25) = 1 µF, C(REG33) = 2.2 µF; typical values at TA = 25°C (unless otherwise noted) PARAMETER ΔV(REG33LOAD) Load Regulation I(REG33MAX) Current Limit TYP MAX 0.2 mA ≤ I(REG33OUT) ≤ 2 mA TEST CONDITIONS MIN 7 17 0.2mA ≤ I(REG33OUT) ≤ 25 mA 40 100 100 145 drawing current until REG33 = 3 V 25 short REG33 to VSS, REG33 = 0 V 12 65 UNIT mV mA THERMISTOR DRIVE V(TOUT) RDS(on) Output voltage I(TOUT) = 0 mA; TA = 25°C TOUT pass element resistance I(TOUT) = 1 mA; RDS(on) = (V(REG25) - V(TOUT) )/ 1 mA; TA = –40°C to 100°C V(REG25) V 50 100 Ω VCELL+ HIGH VOLTAGE TRANSLATION V(VCELL+OUT) V(VCELL+REF) Translation output VC(n) - VC(n+1) = 0 V; TA = –40°C to 100°C 0.950 0.975 1 VC(n) - VC(n+1) = 4.5 V; TA = –40°C to 100°C 0.275 0.3 0.375 internal AFE reference voltage ; TA = –40°C to 100°C 0.965 0.975 0.985 V(VCELL+PACK) Voltage at PACK pin; TA = –40°C to 100°C 0.98 × V(PACK)/18 V(PACK)/18 1.02 × V(PACK)/18 V(VCELL+BAT) Voltage at BAT pin; TA = –40°C to 100°C 0.98 × V(BAT)/18 V(BAT)/18 1.02 × V(BAT)/18 CMMR Common mode rejection ratio K Cell scale factor VCELL+ 40 V dB K= {VCELL+ output (VC5=0V; VC4=4.5V) - VCELL+ output (VC5=0V; VC4=0V)}/4.5 0.147 0.150 0.153 K= {VCELL+ output (VC2=13.5V; VC1=18V) - VCELL+ output (VC5=13.5V; VC1=13.5V)}/4.5 0.147 0.150 0.153 12 18 -18 -1 18 mV -1 0.01 1 μA 200 400 600 Ω I(VCELL+OUT) Drive Current to VCELL+ capacitor VC(n) - VC(n+1) = 0V; VCELL+ = 0 V; TA = –40°C to 100°C V(VCELL+O) CELL offset error CELL output (VC2 = VC1 = 18 V) - CELL output (VC2 = VC1 = 0 V) IVCnL VC(n) pin leakage current VC1, VC2, VC3, VC4, VC5 = 3 V μA CELL BALANCING internal cell balancing FET resistance R(BAL) RDS(on) for internal FET switch at VDS = 2 V; TA = 25°C HARDWARE SHORT CIRCUIT AND OVERLOAD PROTECTION; TA = 25°C (unless otherwise noted) OL detection threshold voltage accuracy V(OL) VOL = 25 mV (min) 15 25 35 VOL = 100 mV; RSNS = 0, 1 90 100 110 185 205 225 VOL = 205 mV (max) V(SCC) = 50 mV (min) SCC detection threshold voltage accuracy V(SCC) 30 50 70 V(SCC) = 200 mV; RSNS = 0, 1 180 200 220 V(SCC) = 475 mV (max) 428 475 523 V(SCD) = –50 mV (min) SCD detection threshold voltage accuracy V(SCD) tda Delay time accuracy tpd Protection circuit propagation delay –30 –50 –70 V(SCD) = –200 mV; RSNS = 0, 1 –180 –200 –220 V(SCD) = –475 mV (max) –428 –475 –523 mV mV mV ±15.25 μs 50 μs FET DRIVE CIRCUIT; TA = 25°C (unless otherwise noted) V(DSGON) DSG pin output on voltage V(DSGON) = V(DSG) - V(PACK); V(GS) connect to 10 MΩ; DSG and CHG on; TA = –40°C to 100°C 8 12 16 V V(CHGON) CHG pin output on voltage V(CHGON) = V(CHG) - V(BAT); V(GS) = 10 MΩ; DSG and CHG on; TA = –40°C to 100°C 8 12 16 V V(DSGOFF) DSG pin output off voltage V(DSGOFF) = V(DSG) - V(PACK) 0.2 V V(CHGOFF) CHG pin output off voltage V(CHGOFF) = V(CHG) - V(BAT) 0.2 V 6 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): bq20z45-R1 bq20z45-R1 www.ti.com SLUS992 – DECEMBER 2009 ELECTRICAL CHARACTERISTICS (continued) over operating free-air temperature range (unless otherwise noted), TA = –40°C to 85°C, V(REG25) = 2.41 V to 2.59 V, V(BAT) = 14 V, C(REG25) = 1 µF, C(REG33) = 2.2 µF; typical values at TA = 25°C (unless otherwise noted) PARAMETER TYP MAX V(CHG): V(PACK) ≥ V(PACK) + 4V TEST CONDITIONS 400 1000 V(DSG): V(BAT) ≥ V(BAT) + 4V 400 1000 V(CHG): V(PACK) + V(CHGON) ≥ V(PACK) + 1V 40 200 V(DSG): VC1 + V(DSGON) ≥ VC1 + 1V 40 200 3.3 3.5 3.7 ALERT 60 100 200 RESET 1 3 6 tr Rise time CL= 4700 pF tf Fall time CL= 4700pF V(ZVCHG) ZVCHG clamp voltage BAT = 4.5 V MIN UNIT μs μs V LOGIC; TA = –40°C to 100°C (unless otherwise noted) R(PULLUP) Internal pullup resistance VOL Logic low output voltage level ALERT 0.2 RESET; V(BAT) = 7V; V(REG25) = 1.5 V; I (RESET) = 200 μA 0.4 GPOD; I(GPOD) = 50 μA 0.6 kΩ V LOGIC SMBC, SMBD, PFIN, PRES, SAFE, ALERT VIH High-level input voltage VIL Low-level input voltage VOH Output voltage high (1) IL = –0.5 mA VOL Low-level output voltage PRES, PFIN, ALERT, IL = 7 mA; CI Input capacitance I(SAFE) SAFE source currents SAFE active, SAFE = V(REG25) –0.6 V SAFE leakage current SAFE inactive Ilkg 2.0 V 0.8 V VREG25–0.5 V 0.4 V 5 pF –3 mA –0.2 Input leakage current 0.2 µA 1 µA ADC (2) Input voltage range TS1, TS2, using Internal Vref –0.2 Conversion time 1 V 31.5 Resolution (no missing codes) 16 Effective resolution 14 bits 15 Integral nonlinearity bits ±0.03 Offset error (4) Offset error drift (4) ms TA = 25°C to 85°C Full-scale error (5) Full-scale error drift 140 250 µV 2.5 18 μV/°C ±0.1% ±0.7% 50 Effective input resistance (6) %FSR (3) PPM/°C 8 MΩ COULOMB COUNTER Input voltage range –0.20 Conversion time Single conversion Effective resolution Single conversion Integral nonlinearity Offset error (7) ±0.007 ±0.007 (9) (7) (8) (9) ±0.034 %FSR 10 0.4 µV 0.7 µV/°C ±0.35% Full-scale error drift (1) (2) (3) (4) (5) (6) bits –0.20 V to –0.1 V TA = 25°C to 85°C V ms 15 –0.1 V to 0.20 V Offset error drift Full-scale error (8) 0.20 250 150 PPM/°C RC[0:7] bus Unless otherwise specified, the specification limits are valid at all measurement speed modes Full-scale reference Post-calibration performance and no I/O changes during conversion with SRN as the ground reference Uncalibrated performance. This gain error can be eliminated with external calibration. The A/D input is a switched-capacitor input. Since the input is switched, the effective input resistance is a measure of the average resistance. Post-calibration performance Reference voltage for the coulomb counter is typically Vref/3.969 at V(REG25) = 2.5 V, TA = 25°C. Uncalibrated performance. This gain error can be eliminated with external calibration. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): bq20z45-R1 7 bq20z45-R1 SLUS992 – DECEMBER 2009 www.ti.com ELECTRICAL CHARACTERISTICS (continued) over operating free-air temperature range (unless otherwise noted), TA = –40°C to 85°C, V(REG25) = 2.41 V to 2.59 V, V(BAT) = 14 V, C(REG25) = 1 µF, C(REG33) = 2.2 µF; typical values at TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS Effective input resistance (10) TA = 25°C to 85°C MIN TYP MAX UNIT 2.5 MΩ INTERNAL TEMPERATURE SENSOR V(TEMP) Temperature sensor voltage (11) -2.0 mV/°C VOLTAGE REFERENCE Output voltage 1.215 Output voltage drift 1.225 1.230 65 V PPM/°C HIGH FREQUENCY OSCILLATOR f(OSC) Operating frequency f(EIO) Frequency error t(SXO) Start-up time (14) 4.194 (12) (13) TA = 20°C to 70°C MHz –3% 0.25% 3% –2% 0.25% 2% 2.5 5 ms LOW FREQUENCY OSCILLATOR f(LOSC) f(LEIO) t(LSXO) Operating frequency Frequency error (13) Start-up time 32.768 (15) TA = 20°C to 70°C (14) kHz –2.5% 0.25% 2.5% –1.5% 0.25% 1.5% 500 µs (10) The CC input is a switched capacitor input. Since the input is switched, the effective input resistance is a measure of the average resistance. (11) –53.7 LSB/°C (12) The frequency error is measured from 4.194 MHz. (13) The frequency drift is included and measured from the trimmed frequency at V(REG25) = 2.5V, TA = 25°C (14) The startup time is defined as the time it takes for the oscillator output frequency to be ±3% (15) The frequency error is measured from 32.768 kHz. 8 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): bq20z45-R1 bq20z45-R1 www.ti.com SLUS992 – DECEMBER 2009 DATA FLASH CHARACTERISTICS OVER RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE Typical Values at TA = 25°C and V(REG25) = 2.5 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN Data retention Flash programming write-cycles t(ROWPROG) Row programming time See TYP MAX UNIT 10 Years 20k Cycles (1) t(MASSERASE) Mass-erase time t(PAGEERASE) Page-erase time 2 ms 200 ms 20 ms I(DDPROG) Flash-write supply current 5 10 mA I(DDERASE) Flash-erase supply current 5 10 mA RAM BACKUP I(RB) RB data-retention input current V(RB) RB data-retention input voltage (1) (1) V(RBI) > V(RBI)MIN , VREG25 < VIT–, TA = 85°C 1000 2500 V(RBI) > V(RBI)MIN , VREG25 < VIT–, TA = 25°C 90 220 1.7 nA V Specified by design. Not production tested. SMBus TIMING CHARACTERISTICS TA = –40°C to 85°C Typical Values at TA = 25°C and VREG25 = 2.5 V (Unless Otherwise Noted) PARAMETER f(SMB) TEST CONDITIONS MIN SMBus operating frequency Slave mode, SMBC 50% duty cycle f(MAS) SMBus master clock frequency Master mode, No clock low slave extend t(BUF) Bus free time between start and stop (see Figure 1) t(HD:STA) Hold time after (repeated) start (see Figure 1) t(SU:STA) Repeated start setup time (see Figure 1) t(SU:STO) Stop setup time (see Figure 1) t(HD:DAT) Data hold time (see Figure 1) t(SU:DAT) Data setup time (see Figure 1) t(TIMEOUT) Error signal/detect (see Figure 1) t(LOW) Clock low period (see Figure 1) TYP 10 MAX UNIT 100 kHz 51.2 kHz 4.7 µs 4 µs 4.7 µs 4 µs Receive mode 0 ns Transmit mode 300 250 See (1) 25 ns 35 4.7 µs µs t(HIGH) Clock high period (see Figure 1) See (2) 50 µs t(LOW:SEXT) Cumulative clock low slave extend time See (3) 25 ms t(LOW:MEXT) Cumulative clock low master extend time (see Figure 1) See (4) 10 ms tf Clock/data fall time See (5) 300 ns tr Clock/data rise time See (6) 1000 ns (1) (2) (3) (4) (5) (6) 4 The bq20z45-R1 times out when any clock low exceeds t(TIMEOUT). t(HIGH), Max, is the minimum bus idle time. SMBC = SMBD = 1 for t > 50 ms causes reset of any transaction involving bq20z45-R1 that is in progress. This specification is valid when the NC_SMB control bit remains in the default cleared state (CLK[0]=0). t(LOW:SEXT) is the cumulative time a slave device is allowed to extend the clock cycles in one message from initial start to the stop. t(LOW:MEXT) is the cumulative time a master device is allowed to extend the clock cycles in one message from initial start to the stop. Rise time tr = VILMAX – 0.15) to (VIHMIN + 0.15) Fall time tf = 0.9VDD to (VILMAX – 0.15) Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): bq20z45-R1 9 bq20z45-R1 SLUS992 – DECEMBER 2009 www.ti.com TLOW SCLK TR THD:STA THD:STA TF THIGH THD:DAT TSU:STA TSU:STO TSU:DAT SDATA TBUF P S S P Start Stop TLOW:SEXT SCLKACK† SCLKACK† TLOW:MEXT TLOW:MEXT TLOW:MEXT SCLK SDATA A. SCLKACK is the acknowledge-related clock pulse generated by the master. Figure 1. SMBus Timing Diagram 10 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): bq20z45-R1 bq20z45-R1 www.ti.com SLUS992 – DECEMBER 2009 FEATURE SET Primary (1st Level) Safety Features The bq20z45-R1 supports a wide range of battery and system protection features that can easily be configured. The primary safety features include: • • • • • Cell over/undervoltage protection Charge and discharge overcurrent Short Circuit Charge and discharge overtemperature with independent alarms and thresholds for each thermistor AFE Watchdog Secondary (2nd Level) Safety Features The secondary safety features of the bq20z45-R1 can be used to indicate more serious faults via the SAFE (pin 7). This pin can be used to blow an in-line fuse to permanently disable the battery pack from charging or discharging. The secondary safety protection features include: • • • • • • • • • Safety overvoltage Safety undervoltage Safety overcurrent in charge and discharge Safety overtemperature in charge and discharge with independent alarms and thresholds for each thermistor Charge FET and 0 Volt Charge FET fault Discharge FET fault Cell imbalance detection (active and at rest) Open thermistor detection AFE communication fault Charge Control Features The bq20z45-R1 charge control features include: • • • • • • • Supports JEITA temperature ranges. Reports charging voltage and charging current according to the active temperature range. Handles more complex charging profiles. Allows for splitting the standard temperature range into 2 sub-ranges and allows for varying the charging current according to the cell voltage. Reports the appropriate charging current needed for constant current charging and the appropriate charging voltage needed for constant voltage charging to a smart charger using SMBus broadcasts. Determines the chemical state of charge of each battery cell using Impedance Track™ and can reduce the charge difference of the battery cells in fully charged state of the battery pack gradually using cell balancing algorithm during charging. This prevents fully charged cells from overcharging and causing excessive degradation and also increases the usable pack energy by preventing premature charge termination Supports pre-charging/zero-volt charging Supports charge inhibit and charge suspend if battery pack temperature is out of temperature range Reports charging fault and also indicate charge status via charge and discharge alarms. Gas Gauging The bq20z45-R1 uses the Impedance Track™ Technology to measure and calculate the available charge in battery cells. The achievable accuracy is better than 1% error over the lifetime of the battery and there is no full charge discharge learning cycle required. See Theory and Implementation of Impedance Track Battery Fuel-Gauging Algorithm application note (SLUA364) for further details. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): bq20z45-R1 11 bq20z45-R1 SLUS992 – DECEMBER 2009 www.ti.com Lifetime Data Logging Features The bq20z45-R1 offers lifetime data logging, where important measurements are stored for warranty and analysis purposes. The data monitored include: • Lifetime maximum temperature • Lifetime minimum temperature • Lifetime maximum battery cell voltage • Lifetime minimum battery cell voltage • Lifetime maximum battery pack voltage • Lifetime minimum battery pack voltage • Lifetime maximum charge current • Lifetime maximum discharge current • Lifetime maximum charge power • Lifetime maximum discharge power • Lifetime maximum average discharge current • Lifetime maximum average discharge power • Lifetime average temperature Authentication The bq20z45-R1 supports authentication by the host using SHA-1. Power Modes The bq20z45-R1 supports 3 different power modes to reduce power consumption: • • • In Normal Mode, the bq20z45-R1 performs measurements, calculations, protection decisions and data updates in 1 second intervals. Between these intervals, the bq20z45-R1 is in a reduced power stage. In Sleep Mode, the bq20z45-R1 performs measurements, calculations, protection decisions and data update in adjustable time intervals. Between these intervals, the bq20z45-R1 is in a reduced power stage. The bq20z45-R1 has a wake function that enables exit from Sleep mode, when current flow or failure is detected. In Shutdown Mode the bq20z45-R1 is completely disabled. CONFIGURATION Oscillator Function The bq20z45-R1 fully integrates the system oscillators. Therefore the bq20z45-R1 requires no external components for this feature. System Present Operation The bq20z45-R1 checks the PRES pin periodically (1s). If PRES input is pulled to ground by external system, the bq20z45-R1 detects this as system present. BATTERY PARAMETER MEASUREMENTS The bq20z45-R1 uses an integrating delta-sigma analog-to-digital converter (ADC) for current measurement, and a second delta-sigma ADC for individual cell and battery voltage, and temperature measurement. Charge and Discharge Counting The integrating delta-sigma ADC measures the charge/discharge flow of the battery by measuring the voltage drop across a small-value sense resistor between the SR1 and SR2 pins. The integrating ADC measures bipolar signals from -0.25 V to 0.25 V. The bq20z45-R1 detects charge activity when VSR = V(SRP)- V(SRN)is positive and discharge activity when VSR = V(SRP) - V(SRN) is negative. The bq20z45-R1 continuously integrates the signal over time, using an internal counter. The fundamental rate of the counter is 0.65 nVh. 12 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): bq20z45-R1 bq20z45-R1 www.ti.com SLUS992 – DECEMBER 2009 Voltage The bq20z45-R1 updates the individual series cell voltages at one second intervals. The internal ADC of the bq20z45-R1 measures the voltage, scales and calibrates it appropriately. This data is also used to calculate the impedance of the cell for the Impedance Track™ gas-gauging. Current The bq20z45-R1 uses the SRP and SRN inputs to measure and calculate the battery charge and discharge current using a 5 mΩ to 20 mΩ typ. sense resistor. Auto Calibration The bq20z45-R1 provides an auto-calibration feature to cancel the voltage offset error across SRN and SRP for maximum charge measurement accuracy. The bq20z45-R1 performs auto-calibration when the SMBus lines stay low continuously for a minimum of 5 s. Temperature The bq20z45-R1 has an internal temperature sensor and inputs for 2 external temperature sensor inputs TS1 and TS2 used in conjunction with two identical NTC thermistors (default are Semitec 103AT) to sense the battery environmental temperature. The bq20z45-R1 can be configured to use internal or up to 2 external temperature sensors. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): bq20z45-R1 13 bq20z45-R1 SLUS992 – DECEMBER 2009 www.ti.com COMMUNICATIONS The bq20z45-R1 uses SMBus v1.1 with Master Mode and package error checking (PEC) options per the SBS specification. SMBus On and Off State The bq20z45-R1 detects an SMBus off state when SMBC and SMBD are logic-low for ≥ 2 seconds. Clearing this state requires either SMBC or SMBD to transition high. Within 1 ms, the communication bus is available. SBS Commands Table 2. SBS COMMANDS SBS Cmd Mode Name Format Size in Bytes Min Value Max Value Default Value Unit 0x00 R/W 0x01 R/W ManufacturerAccess hex 2 0x0000 0xffff — — RemainingCapacityAlarm unsigned int 2 0 65535 300 0x02 mAh or 10mWh R/W RemainingTimeAlarm unsigned int 2 0 65535 10 min 0x03 R/W BatteryMode hex 2 0x0000 0xe383 — — 0x04 R/W AtRate signed int 2 –32768 32767 — mA or 10mW 0x05 R AtRateTimeToFull unsigned int 2 0 65534 — min 0x06 R AtRateTimeToEmpty unsigned int 2 0 65534 — min 0x07 R AtRateOK unsigned int 2 0 65535 — — 0x08 R Temperature unsigned int 2 0 65535 — 0.1°K 0x09 R Voltage unsigned int 2 0 65535 — mV 0x0a R Current signed int 2 –32768 32767 — mA 0x0b R AverageCurrent signed int 2 –32768 32767 — mA 0x0c R MaxError unsigned int 1 0 100 — % 0x0d R RelativeStateOfCharge unsigned int 1 0 100 — % 0x0e R AbsoluteStateOfCharge unsigned int 1 0 100+ — % 0x0f R/W RemainingCapacity unsigned int 2 0 65535 — mAh or 10mWh 0x10 R FullChargeCapacity unsigned int 2 0 65535 — mAh or 10mWh 0x11 R RunTimeToEmpty unsigned int 2 0 65534 — min 0x12 R AverageTimeToEmpty unsigned int 2 0 65534 — min 0x13 R AverageTimeToFull unsigned int 2 0 65534 — min 0x14 R ChargingCurrent unsigned int 2 0 65534 — mA 0x15 R ChargingVoltage unsigned int 2 0 65534 — mV 0x16 R BatteryStatus unsigned int 2 0x0000 0xffff — — 0x17 R/W CycleCount unsigned int 2 0 65535 — — 0x18 R/W DesignCapacity unsigned int 2 0 65535 4400 mAh or 10mWh 0x19 R/W DesignVoltage unsigned int 2 7000 16000 14400 mV 0x1a R/W SpecificationInfo unsigned int 2 0x0000 0xffff 0x0031 — 0x1b R/W ManufactureDate unsigned int 2 0 65535 01-Jan-1980 — 0x1c R/W SerialNumber hex 2 0x0000 0xffff 0x0001 — 0x20 R/W ManufacturerName String 20+1 — — Texas Inst. — 0x21 R/W DeviceName String 20+1 — — bq20z45-R1 — 0x22 R/W DeviceChemistry String 4+1 — — LION — 0x23 R ManufacturerData String 14+1 — — — — 0x2f R/W Authenticate String 20+1 — — — — 0x3c R CellVoltage4 unsigned int 2 0 65535 — mV 0x3d R CellVoltage3 unsigned int 2 0 65535 — mV 0x3e R CellVoltage2 unsigned int 2 0 65535 — mV 0x3f R CellVoltage1 unsigned int 2 0 65535 — mV 14 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): bq20z45-R1 bq20z45-R1 www.ti.com SLUS992 – DECEMBER 2009 Table 3. EXTENDED SBS COMMANDS SBS Cmd Mode Name Format Size in Bytes Min Value Max Value Default Value Unit 0x45 R AFEData String 11+1 — — — — 0x46 R/W FETControl hex 2 0x00 0xff — — 0x4f R StateOfHealth hex 2 0x0000 0xffff — % 0x51 R SafetyStatus hex 2 0x0000 0xffff — — 0x53 R PFStatus hex 2 0x0000 0xffff — — 0x54 R OperationStatus hex 2 0x0000 0xffff — — 0x55 R ChargingStatus hex 2 0x0000 0xffff — — 0x57 R ResetData hex 2 0x0000 0xffff — — 0x58 R WDResetData unsigned int 2 0 65535 — — 0x5a R PackVoltage unsigned int 2 0 65535 — mV 0x5d R AverageVoltage unsigned int 2 0 65535 — mV 0x5e R TS1Temperature integer 2 –400 1200 — 0.1°C 0x5f R TS2Temperature integer 2 –400 1200 — 0.1°C 0x60 R/W UnSealKey hex 4 0x00000000 0xffffffff — — 0x61 R/W FullAccessKey hex 4 0x00000000 0xffffffff — — 0x62 R/W PFKey hex 4 0x00000000 0xffffffff — — 0x63 R/W AuthenKey3 hex 4 0x00000000 0xffffffff — — 0x64 R/W AuthenKey2 hex 4 0x00000000 0xffffffff — — 0x65 R/W AuthenKey1 hex 4 0x00000000 0xffffffff — — 0x66 R/W AuthenKey0 hex 4 0x00000000 0xffffffff — — 0x69 R SafetyStatus2 hex 2 0x0000 0x000f — — 0x6b R PFStatus2 hex 2 0x0000 0x000f — — 0x6c R/W ManufBlock1 String 20 — — — — 0x6d R/W ManufBlock2 String 20 — — — — 0x6e R/W ManufBlock3 String 20 — — — — 0x6f R/W ManufBlock4 String 20 — — — — 0x70 R/W ManufacturerInfo String 31+1 — — — — 0x71 R/W SenseResistor unsigned int 2 0 65535 — μΩ 0x72 R TempRange hex 2 0x0000 0xffff — — 0x73 R LifetimeData String 32+1 — — — — 0x77 R/W DataFlashSubClassID hex 2 0x0000 0xffff — — 0x78 R/W DataFlashSubClassPage1 hex 32 — — — — 0x79 R/W DataFlashSubClassPage2 hex 32 — — — — 0x7a R/W DataFlashSubClassPage3 hex 32 — — — — 0x7b R/W DataFlashSubClassPage4 hex 32 — — — — 0x7c R/W DataFlashSubClassPage5 hex 32 — — — — 0x7d R/W DataFlashSubClassPage6 hex 32 — — — — 0x7e R/W DataFlashSubClassPage7 hex 32 — — — — 0x7f R/W DataFlashSubClassPage8 hex 32 — — — — Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): bq20z45-R1 15 bq20z45-R1 SLUS992 – DECEMBER 2009 www.ti.com APPLICATION SCHEMATIC 16 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): bq20z45-R1 PACKAGE OPTION ADDENDUM www.ti.com 4-Jan-2010 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty BQ20Z45DBT-R1 ACTIVE TSSOP DBT 38 BQ20Z45DBTR-R1 ACTIVE TSSOP DBT 38 50 Lead/Ball Finish MSL Peak Temp (3) Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. 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