AEGIS A1C240S.02.05 Fast recovery diode Datasheet

AEGIS
SEMICONDUTORES LTDA.
A1C:240S.XX.05
VOLTAGE RATINGS
Part Number
VRRM , VR – (V)
rep. peak reverse voltage
This datasheet applies to:
Max. VRSM , VR – (V) Max. nonrep. peak reverse voltage
O
TJ = 0 to 150OC
TJ = -40 to 0 C
TJ = 25 to 150 OC
A1C:240S.02.05
200
200
300
A1C:240S.04.05
400
400
500
A1C:240S.06.05
600
600
700
A1C:240S.08.05
800
800
900
A1C:240S.10.05
1000
1000
1100
A1C:240S.12.05
1200
1200
1300
Metric thread: A1C:240S.XX.05,
A1D:240S.XX.05
Inch thread: A2C:240S.XX.05,
A2D:240S.XX.05
MAXIMUM ALLOWABLE RATINGS
PARAMETER
TJ Junction Temperature
Tstg Storage Temperature
VALUE
O
-
-40 to 150
O
-
C
C
Max. Av. current
240
A
@ Max. TC
100
O
IF(RMS) Nom. RMS current
380
A
IF(AV)
6.27
60 Hz half cycle sine wave
6.56
50 Hz half cycle sine wave
7.15
60 Hz half cycle sine wave
t = 10ms
187
2 1/2
Initial TJ = 125 OC, rated VRRM
applied after surge.
t = 8.3 ms
195
t = 10ms
213.00
t = 8.3 ms
2 1/2
As
IRRM Maximum peak reverse
current at rated VRRM .
1
mA
IRM Peak reverse recovery current
25
A
capability
Initial TJ = 125OC, no voltage
applied after surge.
kA2s
2340
Max. I t
Initial TJ = 125OC, rated VRRM
applied after surge.
kA
I2t Max. I2t capability
2 1/2
50 Hz half cycle sine wave
171.00
It
180O half sine wave
C
5.75
IFSM Max. Peak non-rep. surge
current
NOTES
UNITS
-40 to 150
IFM Peak forward current
240
A
di/dt Max. Non-repetitive rate-ofrise current
50
A/ms
F Mounting Force
30
N.m
O
Initial TJ = 125 C, no voltage
applied after surge.
Initial TJ = 125OC, no voltage applied after surge.
2 1/2
for time tx = I t
* tx1/2. (0.1 < tx < 10ms).
TJ = 25 OC
O
TJ = 25 C, VD = VDRM , IFM = 240A.
-
2
It
AEGIS
SEMICONDUTORES LTDA.
A1C:240S.XX.05
CHARACTERISTICS
PARAMETER
TYP.
---
---
MAX. UNITS
1.75
VF(TO) Threshold voltage
---
---
0.8
V
mW
rF Slope resistance
---
---
1.15
trr Maximum reverse recovery
time
---
---
1000
---
---
2000
RthJC Thermal resistance,
junction-to-case
---
---
0.2
O
RthCS Thermal resistance,
case-to-sink
---
---
0.03
O
wt Weight
---
250(8.75)
---
Case Style
---
DO-205AB (DO-9) JEDEC
TJ = 150 OC
O
TJ = 25 C, IF = 1A to V R = 30V, -dIF/dt = 25A/ms
ns
O
TJ = 25 C, -dIF/dt = 25A/ms, IFM = p x rated IF(Av.).
C/W DC operation
C/W Mtg. Surface smooth, flat and greased. Single side cooled.
---
g(oz.)
---
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature
150
Maximum Allowable Case Temperature (ºC)
150
140
130
120
30º
110
60º
90º
120º
100
180º
90
80
0
50
*Sinusoidal waveform
100
150
200
140
130
120
30º
110
60º
120º
180º
90
DC
80
0
2000
60º
90º
1000
120º
180º
0
0
50
100
150
200
250
300
350
400
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
100
150
200
250
300
350
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Maximum Average Forward Power Loss
2500
30º
*Sinusoidal waveform
50
*Rectangular waveform
Maximum Average Forward Power Loss
3000
90º
100
250
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
TEST CONDITIONS
Initial TJ = 25OC, 50-60Hz half sine, Ipeak = 754A.
V
Maximum Average Forward Power Loss (W)
Maximum Allowable Case Temperature (ºC)
MIN.
VFM peak on-state voltage
30º
2000
1500
60º
1000
90º
120º
180º
500
DC
0
0
50
*Rectangular waveform
100
150
200
250
300
350
400
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
AEGIS
SEMICONDUTORES LTDA.
A1C:240S.XX.05
Forward Voltage Drop
Transient Thermal Impedance ZthJC
1
Transient Thermal Impedance ZthJC (ºC/W)
Instantaneous Forward Current (A)
1000
100
125ºC
25ºC
10
0.5
1.0
1.5
2.0
2.5
3.0
0.1
0.01
1E-3
0.01
0.1
10
Fig. 6 - Transient Thermal Impedance
Characteristics
Fig. 5 - Forward Voltage Drop Characteristics
Frequency Characteristics
7000
1
Time (s)
Instantaneous Forward Voltage (V)
Frequency Characteristics
6000
4000
Peak On-State Current (A)
Peak On-State Current (A)
5000
50 Hz
100 Hz
200 Hz
3000
500 Hz
1 kHz
2 kHz
2000
5 kHz
10 kHz
20 kHz
50 Hz
100 Hz
200 Hz
500 Hz
1 kHz
2 kHz
5 kHz
1000
10 kHz
20 kHz
1000
101
102
*Sinusoidal pulse
Tc = 60ºC
103
104
101
102
*Rectangular pulse
Tc = 60ºC
Pulse Basewidth (?s)
104
Pulse Basewidth (?s)
Fig. 8 - Frequency Characteristics
Fig. 7 - Frequency Characteristics
Frequency Characteristics
Frequency Characteristics
7000
103
6000
4000
Peak On-State Current (A)
Peak On-State Current (A)
5000
50 Hz
3000
100 Hz
200 Hz
500 Hz
2000
1 kHz
2 kHz
5 kHz
50 Hz
100 Hz
200 Hz
500 Hz
1 kHz
1000
2 kHz
5 kHz
10 kHz
10 kHz
20 kHz
20 kHz
1000
*Sinusoidal Pulse
Tc = 80ºC
102
103
Pulse Basewidth (?s)
Fig. 9 - Frequency Characteristics
104
101
*Rectangular Pulse
Tc = 80ºC
102
103
104
Pulse Basewidth (?s)
Fig. 10 - Frequency Characteristics
AEGIS
SEMICONDUTORES LTDA.
A1C:240S.XX.05
Frequency Characteristic
7000
Frequency Characteristics
6000
5000
Peak On-State Current (A)
4000
Peak On-State (A)
50 Hz
3000
100 Hz
200 Hz
500 Hz
2000
1 kHz
2 kHz
5 kHz
10 kHz
1000
20 kHz
50 Hz
100 Hz
200 Hz
1000
500 Hz
1 kHz
2 kHz
5 kHz
10 kHz
20 kHz
102
*Sinusoidal pulse
Tc = 100ºC
103
104
*Rectangular pulse
Tc = 100ºC
Pulse Basewidth (?s)
Fig. 11 - Frequency Characteristics
102
103
104
Pulse Basewidth (?s)
Fig. 12 - Frequency Characteristics
Maximum On-State Energy Power Loss
Maximum On-State Energy Power Loss
10 J
1000
1000
10 J
5J
Peak On-State Current (A)
Peak On-State Current (A)
5J
2J
0.05 J
0.01 J
0.2 J
0.1 J
0.5 J
1J
0.02 J
100
2J
1J
0.5 J
0.01 J
0.02 J
0.05 J
0.1 J
0.2 J
100
10
10
2
3
10
102
4
10
10
*Sinusoidal pulse
*Rectangular pulse
Pulse Basewidth (?s)
Fig. 13 - Maximum On-State Power Loss
Characteristics
M16 x 1.5
3/4 UNF 2A
103
104
Pulse Basewidth (?s)
Fig. 14 - Maximum On-State Power Loss
Characteristics
DO-205AB(DO-9)
SW32
Fig. 15 - Outline Characteristics
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