FDS2070N3 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. • 4.1 A, 150 V. RDS(ON) = 78 mΩ @ VGS = 10 V Applications • High power and current handling capability • Synchronous rectifier • Fast switching, low gate charge (38nC typical) RDS(ON) = 88 mΩ @ VGS = 6.0 V • High performance trench technology for extremely low RDS(ON) • DC/DC converter • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size 5 Absolute Maximum Ratings Symbol Bottom-side Drain Contact 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 150 V VGSS Gate-Source Voltage ± 20 V ID Drain Current 4.1 A – Continuous (Note 1a) – Pulsed 30 Power Dissipation for Single Operation PD TJ, TSTG (Note 1a) 3.0 (Note 1b) 1.8 W –55 to +150 °C (Note 1a) 40 °C/W (Note 1) 0.5 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS2070N3 FDS2070N3 13’’ 12mm 2500 units 2002 Fairchild Semiconductor International FDS2070N3 Rev B1(W) FDS2070N3 May 2003 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, VDD = 75 V, ID= 4.1 A 370 mJ 4.1 A Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 250 µA 150 ID = 250 µA, Referenced to 25°C V 154 mV/°C Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA On Characteristics (Note 2) ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25°C VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance gFS Forward Transconductance 2 VGS = 10 V, ID = 4.1 A VGS = 6.0V, ID = 3.8 A VGS = 10 V, ID = 4.1 A,TJ = 125°C VDS = 10 V, ID = 4.1 A 2.6 –7 58 61 112 24 4 V mV/°C 78 88 160 mΩ S Dynamic Characteristics VDS = 75 V, V GS = 0 V, f = 1.0 MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) 1884 pF 102 pF 35 pF VGS = 15 mV, f = 1.0 MHz 1.6 Ω VDD = 75 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 10 20 ns ns (Note 2) Turn–On Delay Time tr Turn–On Rise Time 6 12 td(off) Turn–Off Delay Time 40 64 ns tf Turn–Off Fall Time 20 36 ns 38 53 Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 75 V, ID = 4.1 A, VGS = 10 V nC 8 nC 11 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 2.5 A Voltage Diode Reverse Recovery Time IF = 4.1A Diode Reverse Recovery Charge diF/dt = 100 A/µs 0.75 (Note 2) (Note 2) 2.5 1.2 A V 75 nS 404 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 40°C/W when mounted on a 1in2 pad of 2 oz copper b) 85°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS2070N3 Rev B1(W) FDS2070N3 Electrical Characteristics FDS2070N3 Dimensional Outline and Pad Layout FDS2070N3 Rev B1(W) FDS2070N3 Typical Characteristics 1.6 40 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10V 6.0V 30 4.5V 20 4.0V 10 VGS = 4.0V 1.4 4.5V 1.2 6.0V 10V 1 0.8 0 0 2 4 6 8 0 10 5 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 30 ID = 2.1A 1.8 1.4 1 0.6 0.14 TA = 125oC 0.12 0.1 0.08 0.06 TA = 25oC 0.2 0.04 -50 -25 0 25 50 75 100 125 2 150 4 o 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 50 100 TA = -55oC 25oC IS, REVERSE DRAIN CURRENT (A) VDS = 20V ID, DRAIN CURRENT (A) 25 0.16 ID = 4.1 A VGS = 10V 2.2 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.6 15 ID, DRAIN CURRENT (A) 40 125oC 30 20 10 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 2.5 3 3.5 4 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS2070N3 Rev B1(W) FDS2070N3 Typical Characteristics 2500 50V CISS 2000 8 75V 6 4 1500 1000 2 500 0 COSS CRSS 0 0 10 20 30 0 40 30 Figure 7. Gate Charge Characteristics. 90 120 150 Figure 8. Capacitance Characteristics. 100 50 10 P(pk), PEAK TRANSIENT POWER (W) R DS(ON) LIMIT ID, DRAIN CURRENT (A) 60 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 100µs 1ms 10ms 1 100ms 1s DC 0.1 V GS = 10V SINGLE PULSE R θJA = 85 oC/W 0.01 T A = 25 o C 0.1 1 10 100 SINGLE PULSE R θJA = 85°C/W T A = 25°C 40 30 20 10 0.001 0 0.01 1000 0.1 1 V DS , DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t 1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE f = 1MHz VGS = 0 V VDS = 25V ID = 4.1A CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 Figure 10. Single Pulse Maximum Power Dissipation. 1 R θJA (t) = r(t) * R θJA R θJA = 85 °C/W D = 0.5 0.2 0.1 P(pk) 0.1 t1 0.05 t2 0.02 T J - T A = P * R θJA (t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.01 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDS2070N3 Rev B1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTâ CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I2