HL6366DG/67DG ODE-208-061B (Z) Rev.2 Dec. 21, 2006 Low Operating Current Visible High Power Laser Diode Description The HL6366DG/67DG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser display, laser module and optical equipment for measurement. Features • • • • • • • Package Type • HL6366DG/67DG: DG Visible light output : 642 nm Typ Single longitudinal mode Optical output power : 80 mW CW Low operating current : 155 mA Typ Low operating voltage : 2.7 V Max Operating temperature : +50°C TE mode oscillation Internal Circuit • HL6366DG 1 Internal Circuit • HL6367DG 1 3 PD LD 3 PD LD 2 2 Absolute Maximum Ratings (TC = 25°C) Item Symbol Ratings Unit Optical output power LD reverse voltage PO VR(LD) 90 2 mW V PD reverse voltage Operating temperature VR(PD) Topr 30 –10 to +50 V °C Storage temperature Tstg –40 to +85 °C Optical and Electrical Characteristics (TC = 25°C) Item Threshold current Symbol Ith Min — Typ 80 Max 95 Unit mA — Operating current Operating voltage IOP VOP — — 155 2.5 175 2.7 mA V PO = 80 mW PO = 80 mW Beam divergence parallel to the junction Beam divergence perpendicular to the junction θ// 7 10 13 ° PO = 80 mW θ⊥ 16 21 24 ° PO = 80 mW Lasing wavelength Monitor current λp IS 635 0.1 642 0.3 645 0.5 nm mA Rev.2 Dec. 21, 2006 page 1 of 4 Test Condition PO = 80 mW PO = 80 mW, VR(PD) = 5 V HL6366DG/67DG Threshold Current vs. Case Temperature Optical Output Power vs. Forward Current 100 25°C 80 TC = 0°C 60 50°C 40 20 0 50 0 100 150 200 1000 Threshold current, Ith (mA) Optical output power, PO (mW) Typical Characteristic Curves 100 10 250 0 Foward current, IF (mA) 40 50 60 Monitor Current vs. Case Temperature PO = 80 mW VR(PD) = 5 V 1.0 Monitor current, IS (mA) Slope efficiency, ηS (mW/mA) 30 0.8 0.8 0.6 0.4 0.2 0 10 20 30 40 50 0.6 0.4 0.2 0 60 0 Case temperature, TC (°C) 20 30 50 40 60 Far Feild Pattern 1.0 650 PO = 80mW PO = 80mW TC = 25°C 0.8 Relative intensity 645 640 635 630 10 Case temperature, TC (°C) Wavelength vs. Case Temperature Lasing Wavelength, λp (nm) 20 Case temperature, TC (°C) Slope Efficiency vs. Case Temperature 1.2 0 10 Perpendicular 0.6 0.4 0.2 0 10 20 30 40 50 Case temperature, TC (°C) Rev.2 Dec. 21, 2006 page 2 of 4 60 Parallel 0 –40 –30 –20 –10 0 10 20 30 40 Angle, θ ( ° ) HL6366DG/67DG Package Dimensions As of May, 2006 Preliminary Unit: mm 0.4 +0.1 –0 φ 5.6 +0 –0.025 1.0 ± 0.1 (90°) (0.4) 3.3 ± 0.2 φ 1.6 ± 0.2 0.25 φ 3.55 ± 0.1 Glass φ 4.1 ± 0.3 2.27 6.5 ± 1.0 1.2 ± 0.1 Emitting Point 3 – φ 0.45 ± 0.1 1 1 2 3 3 2 φ 2.0 ± 0.2 OPJ Code JEDEC JEITA Mass (reference value) Rev.2 Dec. 21, 2006 page 3 of 4 LD/DG — — 0.35g HL6366DG/67DG Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. OPJ bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily injury, fire or other consequential damage due to operation of the OPJ product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from OPJ. 7. Contact our sales office for any questions regarding this document or OPJ products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses. Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical experiments, when you handle the product. When disposing of the product, please follow the laws of your country and separate it from other waste such as industrial waste and household garbage. 3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ unless otherwise specified. Sales Offices Device Business Unit Opnext Japan, Inc. Takagi Bldg., 3F, 1-3-9, Iwamoto-cho, Chiyoda-ku, Tokyo 101-0032 Japan Tel: (03) 3865-5591 For the detail of Opnext, Inc., see the following homepage: Japan (Japanese) Other area (English) http://www.opnext.com/jp/products/ http://www.opnext.com/products/ ©2007 Opnext Japan, Inc., All rights reserved. Printed in Japan. Colophon 2.0 Rev.2 Dec. 21, 2006 page 4 of 4