HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E 5962-93140 90 V/1.0 Ω, Hermetically Sealed, Power MOSFET Optocoupler Data Sheet Description Features The HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E and SMD 5962-93140 are single channel power MOSFET optocouplers, constructed in eight-pin, hermetic, dual-in-line, ceramic packages. The devices operate exactly like a solidstate relay. Dual Marked with Device Part Number and DLA Standard Microcircuit Drawing The products are capable of operation and storage over the full military temperature range and may be purchased as a standard product (HSSR-7110), with full MILPRF-38534 Class H testing (HSSR-7111 and HSSR- 7112), with MIL-PRF-38534 Class E testing (Class K with exceptions) (HSSR-711E) or from the DLA Standard Microcircuit Drawing (SMD) 5962-93140. Details of the Class E program may be found on page 11 of this datasheet. IO IO 8 1 NC + IF IF 7 - 3 6 VF VO 4 NC 5 QML-38534 MIL-PRF-38534 Class H Modified Space Level Processing Available (Class E) Hermetically Sealed 8-Pin Dual In-Line Package Small Size and Weight Connection B1.6 A, 0.25 Ω CONNECTION B DC CONNECTION + 2 Manufactured and Tested on a MIL-PRF-38534Certified Line Connection A0.8 A, 1.0 Ω CONNECTION A AC/DC CONNECTION 8 Compact Solid-State Bidirectional Switch Performance Guaranteed over -55°C to 125°C Functional Diagrams 1 NC ac/dc Signal &Power Switching - + 2 7 - 3 6 VF 4 NC 5 + VO - 1500 Vdc Withstand Test Voltage High Transient Immunity 5 Amp Output Surge Current Applications Military and Space TRUTH TABLE INPUT OUTPUT H CLOSED L OPEN High Reliability Systems Standard 28 Vdc and 48 Vdc Load Driver Standard 24 Vac Load Driver Aircraft Controls ac/dc Electromechanical and Solid State Relay Replacement I/O Modules Harsh Industrial Environments CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD. All devices are manufactured and tested on a MILPRF-38534 certified line and are included in the DLA Qualified Manufacturers List, QML-38534 for Hybrid Microcircuits. Each device contains an AlGaAs light emitting diode optically coupled to a photovoltaic diode stack which drives two discrete power MOSFETs. The device operates as a solid-state replacement for single-pole, normally open, (1 Form A) relay used for general purpose switching of signals and loads in high reliability applications. The devices feature logic level input control and very low output on-resistance, making them suitable for both ac and dc loads. Connection A, as shown in the Functional Diagram, allows the device to switch either ac or dc loads. Connection B, with the polarity and pin configuration as shown, allows the device to switch dc loads only. The advantage of Connection B is that the on-resistance is significantly reduced, and the output current capability increases by a factor of two. The devices are convenient replacements for mechanical and solid state relays where high component reliability with standard footprint lead configuration is desirable. Devices may be purchased with a variety of lead bend and plating options. See Selection Guide table for details. Standard Microcircuit Drawing (SMD) parts are available for each package and lead style. The HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E and SMD 5962-93140 are designed to switch loads on 28 Vdc power systems. They meet 80 V surge and ± 600 V spike requirements. Selection Guide – Lead Configuration Options Avago Technologies’s Part Number and Options Commercial HSSR-7110 MIL-PRF-38534 Class H HSSR-7111 HSSR-7112 Gold Plate Gold Plate Gold Plate Solder Dipped* Option #200 Option -200 Option -200 Butt Joint/Gold Plate Option #100 Option -100 Gull Wing/Soldered* Option #300 Option -300 Crew Cut/Gold Plate Option #600 MIL-PRF-38534 Class E Standard Lead Finish HSSR-711E SMD Part Number Prescript for all below 5962- 5962- Gold Plate 9314001HPC 9314002HPC 9314001EPC Solder Dipped* 9314001HPA 9314002HPA 9314001EPA Butt Joint/Gold Plate 9314001HYC 9314002HYC Butt Joint/Soldered* 9314001HYA 9314002HYA Gull Wing/Soldered* 9314001HXA 9314002HXA Crew Cut/Gold Plate 9314001HZC Crew Cut/Soldered* 9314001HZA * Solder Contains Lead CAUTION: Maximum Switching Frequency – Care should be taken during repetitive switching of loads so as not to exceed the maximum output current, maximum output power dissipation, maximum case temperature, and maximum junction temperature. 2 Outline Drawing Device Marking 8-pin DIP Through Hole 9.40 (0.370) 9.91 (0.390) 0.76 (0.030) 1.27 (0.050) AVAGO DESIGNATOR AVAGO P/N DLA SMD* DLA SMD* PIN ONE/ ESD IDENT 8.13 (0.320) MAX. 7.16 (0.282 ) 7.57 (0.298 ) 3.81 (0.150 ) MIN. COMPLIANCE INDICATOR, * DATE CODE, SUFFIX (IF NEEDED) COUNTRY OF MFR. AVAGO CAGE CODE* * QUALIFIED PARTS ONLY 4.32 (0.170 ) MAX. 0.51 (0.020) MIN. A QYYWWZ XXXXXX XXXXXXX XXX XXX 50434 Thermal Resistance Maximum Output MOSFET Junction to Case – θJC = 15°C/W 0.20 (0.008 ) 0.33 (0.013 ) ESD Classification 2.29 (0.090) 2.79 (0.110) 0.51 (0.020 ) MAX. 7.36 (0.290) 7.87 (0.310) (MIL-STD-883, Method 3015) .......................... ( ), Class 2 NOTE: DIMENSIONS IN MILLIMETERS (INCHES). Absolute Maximum Ratings Parameter Symbol Min. Max. Units Storage Temperature Range TS -65° +150° C Operating Ambient Temperature TA -55° +125° C Junction Temperature TJ +150° C Operating Case Temperature TC +145° C 260° for 10 s C IF 20 mA Peak Repetitive Input Current (Pulse Width < 100 ms; duty cycle < 50%) IFPK 40 mA Peak Surge Input Current (Pulse Width < 0.2 ms; duty cycle < 0.1%) IFPK surge 100 mA Reverse Input Voltage VR 5 V Average Output Current - Figure 2 Connection A Connection B IO 0.8 1.6 A A IOPK surge 5.0 10.0 A A 90 90 V V 800 mW Lead Solder Temperature (1.6 mm below seating plane) Average Input Current Single Shot Output Current - Figure 3 Connection A (Pulse width < 10 ms) Connection B (Pulse width < 10 ms) Output Voltage Connection A Connection B Average Output Power Dissipation - Figure 4 3 VO -90 0 Note 1 2 Recommended Operating Conditions Parameter Symbol Min. Max. Units Note Input Current (on) IF(ON) 5 20 mA 10 Input Current (on) IF(ON) 10 20 mA 11 Input Voltage (off ) VF(OFF) 0 0.6 V TA -55 +125 °C Operating Temperature Hermetic Optocoupler Options Note: Dimensions in millimeters (inches). Option Description 100 Surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. This option is available on commercial and hi-rel product. 4.32 (0.170) MAX. 0.51 (0.020) MIN. 2.29 (0.090) 2.79 (0.110) 1.14 (0.045) 1.40 (0.055) 0.20 (0.008) 0.33 (0.013) 0.51 (0.020) MAX. 7.36 (0.290) 7.87 (0.310) 200 Lead finish is solder dipped rather than gold plated. This option is available on commercial and hi-rel product. DLA Drawing part numbers contain provisions for lead finish. 300 Surface mountable hermetic optocoupler with leads cut and bent for gull wing assembly. This option is available on commercial and hi-rel product. This option has solder dipped leads. 4.57 (0.180) MAX. 0.51 (0.020) MIN. 2.29 (0.090) 2.79 (0.110) 600 1.40 (0.055) 1.65 (0.065) 4.57 (0.180) MAX. 5˚ MAX. 0.51 (0.020) MAX. 0.20 (0.008) 0.33 (0.013) 9.65 (0.380) 9.91 (0.390) Surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. This option is available on commercial and hi-rel product. 3.81 (0.150) MAX. 0.51 (0.020) MIN. 2.29 (0.090) 2.79 (0.110) Note: Solder contains lead. 4 0.20 (0.008) 0.33 (0.013) 1.02 (0.040) TYP. 7.36 (0.290) 7.87 (0.310) 1.07 (0.042) 1.31 (0.052) Electrical Specifications TA =-55°C to +125°C, unless otherwise specified. See note 9. Parameter Output Withstand Voltage Output On-Resistance Connection A Sym. Group A, Sub-group |VO(OFF)| 1, 2, 3 VF = 0.6 V, IO = 10 PA R(ON) 1, 2, 3 IF = 10 mA, IO = 800 mA, (pulse duration ≤ 30 ms) Test Conditions Min. Typ.* 90 110 0.40 IF = 5 mA, IO = 800 mA, (pulse duration ≤ 30 ms) Output On-Resistance Connection B R(ON) 1, 2, 3 IF = 10 mA, IO = 1.6 A, (pulse duration ≤ 30 ms) IO(OFF) 1, 2, 3 VF = 0.6 V, VO = 90 V Input Forward Voltage VF 1, 2, 3 IF = 10 mA Input Reverse Breakdown Voltage VR 1, 2, 3 Input-Output Insulation II-O 1 Turn On Time tON 9, 10, 11 0.12 1.0 V 5 : 6, 7 0.25 IR = 100 PA tOFF 9, 10, 11 Notes 3, 11 3, 10 : 6, 7 3, 11 3, 10 10-4 10 PA 8 1.24 1.7 V 9 IF = 5 mA 11 10 5.0 V RH ≤ 65%, t = 5 s, VI-O = 1500 Vdc, TA = 25°C IF = 10 mA, VDD = 28 V, IO = 800 mA 1.25 1.0 PA 6.0 ms 6.0 IF = 10 mA, VDD = 28 V, IO = 800 mA 0.02 IF = 5 mA, VDD = 28 V, IO = 800 mA 5 Fig. 0.25 IF = 5 mA, VDD = 28 V, IO = 800 mA Turn Off Time 1.0 Units 1.0 IF = 5 mA, IO = 1.6 A, (pulse duration ≤ 30 ms) Output Leakage Current Max. 0.25 ms 4, 5 1, 10, 11, 12, 13 11 1, 10, 14, 15 11 0.25 10 10 Output Transient Rejection dVo dt 9 VPEAK = 50 V, CM = 1000 pF, CL = 15 pF, RM ≥ 1 M: 1000 V/Ps 17 Input-Output Transient Rejection dVio dt 9 VDD = 5 V, VI-O(PEAK) = 50 V, RL = 20 k:, CL = 15 pF 500 V/Ps 18 Typical Characteristics All typical values are at TA = 25°C, IF(ON) = 10 mA, VF(OFF) = 0.6 V unless otherwise specified. Parameter Symbol Test Conditions Typ. Units Fig. Output Off-Capacitance CO(OFF) VO = 28 V, f = 1 MHz 145 pF 16 Output Offset Voltage |VOS| IF = 10 mA, IO = 0 mA 2 PV 19 IF = 10 mA -1.4 mV/°C 'VF/'TA Input Diode Temperature Coefficient Notes 7 Input Capacitance CIN VF = 0 V, f = 1MHz 20 pF 8 Input-Output Capacitance CI-O VI-O = 0 V, f = 1 MHz 1.5 pF 4 Input-Output Resistance RI-O VI-O = 500 V, t = 60 s 1013 : 4 Turn On Time With Peaking tON IFPK = 100 mA, IFSS = 10 mA VDD = 28 V, IO = 800 mA 0.22 ms 1 6 Notes: 1. Maximum junction to case thermal resistance for the device is 15°C/W, where case temperature, TC, is measured at the center of the package bottom. 2. For rating, see Figure 4. The output power PO rating curve is obtained when the part is handling the maximum average output current IO as shown in Figure 2. 3. During the pulsed RON measurement (IO duration <30 ms), ambient (TA) and case temperature (TC) are equal. 4. Device considered a two terminal device: pins 1 through 4 shorted together and pins 5 through 8 shorted together. 5. This is a momentary withstand test, not an operating condition. 6. For a faster turn-on time, the optional peaking circuit shown in Figure 1 may be implemented. 7. VOS is a function of IF, and is defined between pins 5 and 8, with pin 5 as the reference. VOS must be measured in a stable ambient (free of temperature gradients). 8. Zero-bias capacitance measured between the LED anode and cathode. 9. Standard parts receive 100% testing at 25°C (Subgroups 1 and 9). SMD, Class H and Class E parts receive 100% testing at 25°C, 125°C and -55°C (Subgroups 1 and 9, 2 and 10, 3 and 11 respectively). 10. Applies to HSSR-7112 and 5962-9314002Hxx devices only. 11. Applies to HSSR-7110, HSSR-7111, HSSR-711E, 5962-9314001Hxx and 5962-9314001Exx devices only. HSSR-7110 V CC (+5V) 1 8 + 2 VF - 3 7 6 4 5 IF R2 1200 Ω R1 330 Ω R3 C 15 μF IN 1/4 54ACTOO 1/4 54ACTOO* R1 = REQUIRED CURRENT LIMITING RESISTOR FOR IF (ON) = 10 mA. R2 = PULL-UP RESISTOR FOR VF (OFF) < 600 mV; IF (VCC-VOH ) < 600 mV, OMIT R2. R3, C = OPTIONAL PEAKING CIRCUIT. TYPICAL VALUES * USE SECOND GATE IF IF (PK) > 50 mA REMINDER: TIE ALL UNUSED INPUTS TO GROUND OR V CC Figure 1. Recommended Input Circuit. 6 R3 (Ω) 330 100 33 IF (PK) (mA) 10 (NO PK) 20 40 100 HSSR-7110 t ON (ms) 2.0 1.0 0.48 0.22 12 0.6 0.4 CONNECTION - A IF 10 mA QCA = 40˚ C/W QCA = 80˚ C/W 0.2 0 -55 -25 5 35 65 95 125 11 10 9 CONNECTION-B 8 7 6 5 CONNECTION-A 4 3 155 10 200 Figure 2. Maximum Average Output Current Rating vs. Ambient Temperature. NORMALIZED TYPICAL OUTPUT WITHSTAND VOLTAGE NORMALIZED TYPICAL OUTPUT RESISTANCE 1.02 1.00 0.98 0.96 -25 5 35 65 1.4 1.2 1.0 95 0.6 -55 125 Figure 5. Normalized Typical Output Withstand Voltage vs. Temperature. 35 65 95 125 -9 -11 35 65 95 T A - TEMPERATURE - ˚C Figure 8. Typical Output Leakage Current vs. Temperature. 125 10 -2 10 -3 T A = 125˚C 10 -25 5 35 65 95 125 155 CONNECTION - A 0.6 IO 10 mA IO (PULSE DURATION 30 ms) 0.4 0.2 0 T A = 125˚C -0.2 T A = 25˚C -0.4 T A = -55˚C -4 T A = 25˚C 10 -5 T A = -55˚C 10 -6 0.4 0.6 0.8 1.0 1.2 1.4 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 V O - OUTPUT VOLTAGE - V Figure 6. Normalized Typical Output Resistance vs. Temperature. IF - INPUT FORWARD CURRENT - A IO(OFF) - OUTPUT LEAKAGE CURRENT - A 5 10 -1 CONNECTION A V F = 0.6 V V O = 90 V 10 -10 7 -25 T A - AMBIENT TEMPERATURE - ˚C 10 -7 20 0 -55 -0.6 T A - AMBIENT TEMPERATURE - ˚C 10 CONNECTION - A IF 10 mA QCA = 40˚ C/W QCA = 80˚ C/W 0.2 Figure 4. Output Power Rating vs. Ambient Temperature. 0.8 0.94 -55 0.4 T A - AMBIENT TEMPERATURE - ˚C CONNECTION - A IF 10 mA IO = 800 mA (PULSE DURATION 30 ms) 1.6 1.04 10 1000 0.6 0.8 1.8 V F = 0.6 V IO = 10 μA 1.06 10 -8 800 Figure 3. Single Shot (non-repetitive) Output Current vs. Pulse Duration. 1.10 0.92 600 400 0.8 PULSE DURATION - ms T A - AMBIENT TEMPERATURE - ˚C 1.08 1.0 10 mA IO - OUTPUT CURRENT - A IO - OUTPUT CURRENT - A 0.8 IF P O - OUTPUT POWER DISSIPATION - W IOPK SURGE - OUTPUT CURRENT - A 1.0 1.6 V F - INPUT FORWARD VOLTAGE - V Figure 9. Typical Input Forward Current vs. Input Forward Voltage. Figure 7. Typical On State Output I-V Characteristics. V DD 50% PULSE GEN. Z O = 50 t f = t r = 5 ns 50% IF P.W. = 15 ms IF VO RL HSSR-7110 1 8 + 2 VF - 3 7 6 4 5 90% VO MONITOR NODE C L = 25 pF (C L INCLUDES PROBE AND FIXTURE CAPACITANCE) IF MONITOR 10% R (MONITOR) 200 t ON t OFF Figure 10. Switching Test Circuit for tON, tOFF. 3.0 2.0 1.8 1.6 1.4 1.2 1.0 0.8 -55 -25 5 35 65 95 2.2 1.0 0.6 10 15 14.0 13.8 13.6 35 25 20 15 10 13.2 5 5 35 65 0.6 0.4 0 95 125 T A -TEMPERATURE - ˚C Figure 14. Typical Turn Off Time vs. Temperature. 5 10 15 10 20 30 40 50 60 70 80 90 V DD - VOLTAGE - V 30 13.4 -25 0.8 0 Figure 13. Typical Turn On Time vs. Voltage. C O(OFF) - OUTPUT OFF CAPACITANCE - pF 14.2 -55 1.0 20 CONNECTION A V DD = 28 V IO = 800 mA T A = 25˚C 40 T OFF - TURN OFF TIME - μs T OFF - TURN OFF TIME - μs 5 45 CONNECTION A IF = 10 mA V DD = 28 V IO = 800 mA 14.4 1.2 0.2 Figure 12. Typical Turn On Time vs. Input Current. 15.0 14.6 1.4 IF - INPUT CURRENT - mA Figure 11. Typical Turn On Time vs. Temperature. 8 1.6 1.4 T A - TEMPERATURE - ˚C 14.8 CONNECTION - A IF = 10 mA IO = 800 mA T A = 25˚C 1.8 1.8 0.2 125 2.0 CONNECTION A V DD = 28 V IO = 800 mA T A = 25˚C 2.6 T ON - TURN ON TIME - ms T ON - TURN ON TIME - ms 2.2 CONNECTION A IF = 10 mA V DD = 28 V IO = 800 mA T ON - TURN ON TIME - ms 2.6 2.4 GND GND 20 IF - INPUT CURRENT - mA Figure 15. Typical Turn Off Time vs. Input Current. 440 CONNECTION A f = 1 MHz T A = 25˚C 400 360 320 280 240 200 160 120 0 20 25 5 10 15 V O(OFF) - OUTPUT VOLTAGE - V Figure 16. Typical Output Off Capacitance vs. Output Voltage. 30 HSSR-7110 1 8 + 2 VF - 3 7 6 4 5 VM MONITOR NODE IF INPUT OPEN CM RM V PEAK + PULSE GENERATOR C M INCLUDES PROBE AND FIXTURE CAPACITANCE R M INCLUDES PROBE AND FIXTURE RESISTANCE 90% 90% V PEAK 10% 10% tr tf V M (MAX) 5 V (0.8) V (PEAK) dVO = tr dt OR (0.8) V (PEAK) tf OVERSHOOT ON VPEAK IS TO BE 10%. Figure 17. Output Transient Rejection Test Circuit. V DD HSSR-7110 IF S1 A 8 + 2 VF - 3 7 CL 6 (C L INCLUDES PROBE PLUS FIXTURE CAPACITANCE ) 4 5 V IN V I-O + PULSE GENERATOR 90% V I-O(PEAK) 10% 10% tf tr V O(OFF) S 1 AT A (V F = 0 V) V O(OFF) (min) 3.25 V VO(ON) (max) 0.8 V O(ON) S 1 AT B (I F = 10 mA)11 OR (IF = 5 mA)10 (0.8) V I-O(PEAK) dV I-O (0.8) V I-O(PEAK) = OR tf dt tr OVERSHOOT ON VI-O(PEAK) IS TO BE 10% Figure 18. Input-Output Transient Rejection Test Circuit. 9 VO 1 B 90% RL ISOTHERMAL CHAMBER T je T jd T jf1 T jf2 HSSR-7110 104 IF +2 7 - 3 6 4 DIGITAL NANOVOLTMETER V OS TA 1 8 2 7 3 6 R OUT 1.0 R IN 200 4 15 CA 5 - HSSR-7110 5.5 V 15 TC Figure 19. Voltage Offset Test Setup. V IN 15 8 + 1 5 V O (SEE NOTE) T je = LED JUNCTION TEMPERATURE T jf1 = FET 1 JUNCTION TEMPERATURE T jf2 = FET 2 JUNCTION TEMPERATURE T jd = FET DRIVER JUNCTION TEMPERATURE T C = CASE TEMPERATURE (MEASURED AT CENTER OF PACKAGE BOTTOM) T A = AMBIENT TEMPERATURE (MEASURED 6" AWAY FROM THE PACKAGE) CA = CASE-TO-AMBIENT THERMAL RESISTANCE ALL THERMAL RESISTANCE VALUES ARE IN ˚C/W R OUT Figure 21. Thermal Model. 1.0 NOTE: IN ORDER TO DETERMINE V OUT CORRECTLY, THE CASE TO AMBIENT THERMAL IMPEDANCE MUST BE MEASURED FOR THE BURN-IN BOARDS TO BE USED. THEN, KNOWING CA , DETERMINE THE CORRECT OUTPUT CURRENT PER FIGURES 2 AND 4 TO INSURE THAT THE DEVICE MEETS THE DERATING REQUIREMENTS AS SHOWN. Figure 20. Burn-In Circuit. Applications Information On-Resistance and Rating Curves Thermal Model The output on-resistance, RON, specified in this data sheet, is the resistance measured across the output contact when a pulsed current signal (IO = 800 mA) is applied to the output pins. The use of a pulsed signal (≤ 30 ms) implies that each junction temperature is equal to the ambient and case temperatures. The steadystate resistance, RSS, on the other hand, is the value of the resistance measured across the output contact when a DC current signal is applied to the output pins for a duration sufficient to reach thermal equilibrium. RSS includes the effects of the temperature rise of each element in the thermal model. Rating curves are shown in Figures 2 and 4. Figure 2 specifies the maximum average output current allowable for a given ambient temperature. Figure 4 specifies the output power dissipation allowable for a given ambient temperature. Above 55°C (for θCA = 80°C/W) and 107°C (for θCA = 40°C/W/W), the maximum allowable output current and power dissipation are related by the expression RSS = PO(max)/ (IO(max))2 from which RSS can be calculated. Staying within the safe area assures that the steady-state junction temperatures remain less than 150°C. As an example, for TA = 95°C and θCA = 80°C/W , Figure 2 shows that the output current should be limited to less than 610 mA. A check with Figure 4 shows that the output power dissipation at TA = 95°C and IO = 610 mA, will be limited to less than 0.35 W. This yields an RSS of 0.94 Ω. The steady state thermal model for the HSSR-7110 is shown in Figure 21. The thermal resistance values given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistances between the LED and other internal nodes are very large in comparison with the other terms and are omitted for simplicity. The components do, however, interact indirectly through θCA, the case-to-ambient thermal resistance. All heat generated flows through θCA, which raises the case temperature TC accordingly. The value of θCA depends on the conditions of the board design and is, therefore, determined by the designer. The maximum value for each output MOSFET junctionto-case thermal resistance is specified as 15°C/W . The thermal resistance from FET driver junction-to-case is also 15°C/W/W. The power dissipation in the FET driver, however, is negligible in comparison to the MOSFETs. 10 Design Considerations for Replacement of ElectroMechanical Relays The HSSR-7110 family can replace electro-mechanical relays with comparable output voltage and current ratings. The following design issues need to be considered in the replacement circuit. Input Circuit: The drive circuit of the electro-mechanical relay coil needs to be modified so that the average forward current driving the LED of the HSSR- 7110 does not exceed 20 mA. A nominal forward drive current of 10 mA is recommended. A recommended drive circuit with 5 volt VCC and CMOS logic gates is shown in Figure 1. If higher VCC voltages are used, adjust the current limiting resistor to a nominal LED forward current of 10 mA. One important consideration to note is that when the LED is turned off, no more than 0.6 volt forward bias should be applied across the LED. Even a few microamps of current may be sufficient to turn on the HSSR- 7110, although it may take a considerable time. The drive circuit should maintain at least 5 mA of LED current during the ON condition. If the LED forward current is less than the 5 mA level, it will cause the HSSR-7110 to turn on with a longer delay. In addition, the power dissipation in the output power MOSFETs increases, which, in turn, may violate the power dissipation guidelines and affect the reliability of the device. Output Circuit: Unlike electromechanical relays, the designer should pay careful attention to the output on-resistance of solid state relays. The previous section, “On- Resistance and Rating Curves” describes the issues that need to be considered. In addition, for strictly dc applications the designer has an advantage using Connection B which has twice the output current rating as Connection A. Furthermore, for dc-only applications, with Connection B the on-resistance is considerably less when compared to Connection A. Output over-voltage protection is yet another important design consideration when replacing electro-mechanical relays with the HSSR-7110. The output power MOSFETs can be protected using Metal oxide varistors (MOVs) or TransZorbs against voltage surges that exceed the 90 volt output withstand voltage rating. Examples of sources of voltage surges are inductive load kickbacks, lightning strikes, and electro-static voltages that exceed the specifications on this data sheet. For more information on output load and protection refer to Application Note 1047. For product information and a complete list of distributors, please go to our web site: References: 1. Application Note 1047, “Low On-Resistance Solid State Relays for High Reliability Applications.” 2. Reliability Data for HSSR-7111, HSSR-7112, and HSSR-711E. MOV is a registered trademark of GE/RCA Solid State. TransZorb is a registered trademark of General Semiconductor. MIL-PRF-38534 Class H, Class E and DLA SMD Test Program Class H: Avago Technologies’ s Hi-Rel Optocouplers are in compliance with MIL-PRF-38534 Class H. Class H devices are also in compliance with DLA drawing 5962-93140. Testing consists of 100% screening and quality conformance inspection to MIL-PRF-38534. Class E: Class E devices are in compliance with DLA drawing 59629314001Exx. Avago Technologies has defined the Class E device on this drawing to be based on the Class K requirements of MIL-PRF-38534 with exceptions. The exceptions are as follows: 1. Nondestructive Bond Pull, Test method 2023 of MILSTD-883 in device screening is not required. 2. Particle Impact Noise Detection (PIND), Test method 2020 of MIL-STD-883 in device screening and group C testing is not required. 3. Die Shear Strength, Test method 2019 of MIL-STD-883 in group B testing is not required. 4. Internal Water Vapor Content, Test method 1018 of MILSTD-883 in group C testing is not required. 5. Scanning Electron Microscope (SEM) inspections, Test method 2018 of MIL-STD-883 in element evaluation is not required. www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-1944EN AV02-3835EN - October 2, 2012