AOSMD AO4414 N-channel enhancement mode field effect transistor Datasheet

AO4414
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4414 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance. Standard
Product AO4414 is Pb-free (meets ROHS & Sony
259 specifications). AO4414L is a Green Product
ordering option. AO4414 and AO4414L are
electrically identical.
VDS (V) = 30V
ID = 8.5A (VGS = 10V)
RDS(ON) < 26mΩ (VGS = 10V)
RDS(ON) < 40mΩ (VGS = 4.5V)
D
S
S
S
G
D
D
D
D
G
S
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
ID
IDM
TA=70°C
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
±20
V
50
3
W
2.1
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
7.1
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
8.5
TA=25°C
Power Dissipation
Maximum
30
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
AO4414
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1
On state drain current
VGS=4.5V, VDS=5V
20
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=8.5A
TJ=125°C
VGS=4.5V, ID=5A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
VDS=5V, ID=5A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
1
Units
V
5
VGS(th)
Coss
0.004
TJ=55°C
ID(ON)
IS
Max
30
VDS=24V, VGS=0V
IDSS
Typ
10
1.9
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=8.5A
100
nA
3
V
A
20
26
29.2
38
31
40
mΩ
mΩ
17
0.76
680
VGS=0V, VDS=15V, f=1MHz
µA
S
1
V
4.3
A
820
pF
102
pF
77
pF
3
3.6
Ω
13.84
17
nC
6.74
8.1
1.84
nC
nC
Qgd
Gate Drain Charge
3.32
tD(on)
Turn-On DelayTime
4.5
6.5
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
nC
ns
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
4.2
6.3
ns
20.1
30
ns
4.9
7.5
ns
trr
Body Diode Reverse Recovery Time
IF=8.5A, dI/dt=100A/µs
17.2
Qrr
Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs
8.6
21
10
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 5: June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10V
4.5V
25
5V
12
ID(A)
ID (A)
20
VDS=5V
16
4V
6V
15
3.5V
8
10
125°C
VGS=3V
5
25°C
4
0
0
0
1
2
3
4
5
1.5
2
VDS (Volts)
Fig 1: On-Region Characteristics
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics
45
1.6
Normalized On-Resistance
VGS=10V
40
RDS(ON) (mΩ)
2.5
VGS=4.5V
35
30
25
20
VGS=10V
1.4
VGS=4.5V
1.2
1
15
0
5
10
15
0.8
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
60
1.0E+00
50
ID=5A
1.0E-01
40
IS (A)
RDS(ON) (mΩ)
25
125°C
125°C
1.0E-02
25°CAS CRITICAL
THIS PRODUCT
HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES
30
1.0E-03
25°CARE NOT AUTHORIZED.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS
AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
20
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1.0E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
VDS=15V
ID=8.5A
800
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
600
400
Coss
2
200
0
0
0
2
4
6
8
10
12
14
Crss
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
RDS(ON)
limited
100µs
10ms
0.1s
1.0
1s
TJ(Max)=150°C
TA=25°C
DC
1
10
100
20
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
D=T on/T
TJ,PK=T A+PDM.ZθJA.RθJA
RθJA=40°C/W
30
30
0
0.001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
25
10
10s
0.1
0.1
20
TJ(Max)=150°C
TA=25°C
40
10µs
1ms
10.0
Power (W)
ID (Amps)
15
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
ZθJA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS
NOT ASSUME ANY LIABILITY ARISING
0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
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