APM4835 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V • • • Super High Density Cell Design Reliable and Rugged SO-8 Package S 1 8 D S 2 7 D S 3 6 D G 4 5 D SO − 8 Applications • S S S Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G Ordering and Marking Information APM 4835 Tem p. R ange P ackage C ode APM 4835 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol P-Channel MOSFET P ackage C ode K : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel H a n d lin g C o d e APM 4835 D D D D (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±25 ID* Maximum Drain Current – Continuous IDM Maximum Drain Current – Pulsed TA = 25°C -8 -50 Unit V A *Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 1 www.anpec.com.tw APM4835 Absolute Maximum Ratings (Cont.) Symbol PD Parameter Maximum Power Dissipation TJ Rating Unit TA = 25°C 2.5 W TA = 100°C 1 Maximum Junction Temperature 150 TSTG Storage Temperature Range RθJA Thermal Resistance - Junction to Ambient Electrical Characteristics Symbol IDSS VGS(th) IGSS RDS(ON) VSD Qg Test Condition VGS =0V, ID= -250µA Zero Gate Voltage Drain Current VDS= -30V, V GS=0V Gate Threshold Voltage VDS=VGS, ID= -250µA Gate Leakage Current VGS = ±25V , V DS=0V Diode Forward Voltage b 50 °C/W (TA=25°C unless otherwise noted) Drain-Source Breakdown Voltage Drain-Source On-state Resistance °C -55 to 150 Parameter Static BV DSS Dynamic (TA = 25°C unless otherwise noted) b APM4835 Unit Min. Typa. Max. -30 -1 V -1.5 -1 µA -2 V ±100 nA VGS = -10V, ID= -8A 16 19 VGS = -4.5V, ID= -5A 24 30 -0.7 -1.3 48 60 ISD= -3A, VGS =0V mΩ V a Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS= -15V, V GS= -10V, ID= -4.6A VDD= -25V, ID= -2A, VGEN= -10V, RG=6Ω RL=12.5Ω VGS =0V, VDS =-25V Frequency = 1.0MHZ 10 nC 9 16 30 17 30 75 120 31 80 ns 3800 590 pF 250 Notes a b : Guaranteed by design, not subject to production testing : Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2% Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 2 www.anpec.com.tw APM4835 Typical Characteristics Output Characteristics Transfer Characteristics 50 50 -ID-Drain Current (A) -ID-Drain Current (A) -VGS=4,5,6,7,8,9,10V 40 30 20 -V GS=3V 10 0 40 30 TJ=125°C 20 TJ=25°C TJ=-55°C 10 0 2 4 6 8 0 10 0 1 2 3 4 5 -VGS - Gate-to-Source Voltage (V) -VDS - Drain-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 1.50 0.05 RDS(on)-On-Resistance (Ω) -VGS(th)-Threshold Voltage (V) (Normalized) -IDS=250µA 1.25 1.00 0.75 0.50 -50 -25 0 25 50 75 0.03 -VGS=4.5V 0.02 -VGS=10V 0.01 0.00 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 0.04 0 10 20 30 40 50 -ID - Drain Current (A) 3 www.anpec.com.tw APM4835 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 0.07 1.8 -VGS=10V -ID=8A 0.06 RDS(on)-On-Resistance (Ω) (Normalized) RDS(on)-On-Resistance (Ω) -ID=8A 0.05 0.04 0.03 0.02 0.01 0.00 0 2 4 6 8 1.6 1.4 1.2 1.0 0.8 0.6 -50 10 -VGS - Gate-to-Source Voltage (V) -25 0 50 75 100 125 150 TJ - Junction Temperature (°C) Capacitance Gate Charge 4500 10 Frequency=1MHz -VDS=15V -ID=4.6A 3600 8 Capacitance (pF) -VGS-Gate-Source Voltage (V) 25 6 4 Ciss 2700 1800 900 2 Coss Crss 0 0 0 10 20 30 40 50 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 0 6 12 18 24 30 -VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM4835 Typical Characteristics (Cont.) Single Pulse Power 30 100 10 80 TJ=150°C Power (W) -IS-Source Current (Α) Source-Drain Diode Forward Voltage TJ=25°C 1 60 40 20 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 1.4 0.1 -VSD-Source-to-Drain Voltage (V ) 1 10 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle = 0.5 D= 0.2 D= 0.1 0.1 D= 0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.T JM -T A =P DM Z thJA 4.Surface Mounted D= 0.02 SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 5 www.anpec.com.tw APM4835 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 1. 27B S C 0. 50B S C 8° 8° 6 www.anpec.com.tw APM4835 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. (IR/Convection or VPR Reflow) temperature Reflow Condition Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM4835 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions D P Po E t P1 Bo F W Ao D1 Ko T2 J C A B T1 Application SOP- 8 A B 330 ± 1 F 5.5± 1 J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 D D1 Po P1 Ao Bo Ko t 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 2.0 ± 0.1 6.4 ± 0.1 8 5.2± 0. 1 2.1± 0.1 0.3±0.013 www.anpec.com.tw APM4835 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 9 www.anpec.com.tw