CHA5050-QDG RoHS COMPLIANT 17-24GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5050-QDG is a medium power amplifier four stages monolithic circuit. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. UMS UMS A5050 A3667A A3688A YYWW YYWWG Main Features ■ Broadband performances: 17-24GHz ■ 22dB Linear Gain ■ 25dBm Pout @ 1dB comp ■ 30dBm Output IP3 ■ DC bias: Vd=6.0Volt@Id=230mA ■ 24L-QFN4x4 ■ MSL1 Main Electrical Characteristics Tamb.= +25°C, Vd = Vd1 = Vd2 = Vd3 = Vd4 = 6.0V, Id = 230mA Symbol Parameter Min Freq Frequency range 17 Gain Linear Gain P1dB Output power @ 1dB compression Psat Saturated output power OIP3 Output IP3 Ref. : DSCHA5050QDG1216 - 04 Aug 11 1/14 Typ 22 25 26 30 Max 24 Unit GHz dB dBm dBm dBm Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA5050-QDG 17-24GHz Medium Power Amplifier Electrical Characteristics Tamb.= +25°C, Vd = Vd1 = Vd2 = Vd3 = Vd4 = 6.0V Symbol Parameter Min Typ Max Unit Fop Operating frequency range 17 24 GHz G Small Signal Gain 22 dB P1dB Output power @ 1dB compression 25 dBm Psat Saturated output power 26 dBm OIP3 Output IP3 30 dBm Rlin Input Return Loss -7 dB Rlout Output Return Loss -9 dB Vg DC gate voltage -0.5 V Id Total drain current 230 mA These values are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board". Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Vd Drain bias voltage Id Drain bias current Vg Gate bias voltage Pin Maximum peak input power overdrive (2) Tj Junction temperature Ta Operating temperature range Tstg Storage temperature range (1) Operation of this device above anyone of these parameters damage. (2) Duration < 1s. Values Unit 6.5 V 300 mA -2 to +0.4 V +8 dBm 175 °C -40 to +85 °C -55 to +150 °C may cause permanent Typical Bias Conditions Tamb.= +25°C Symbol Vd4, Vd3, Vd2, Vd1 Id Vg Pad No 7, 9, 10, 12 7, 9, 10, 12 22 Ref. : DSCHA5050QDG1216 - 04 Aug 11 Parameter Drain voltage Drain current controlled with Vg Gate voltage 2/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Values 6.0 230 -0.5 Unit V mA V Specifications subject to change without notice CHA5050-QDG 17-24GHz Medium Power Amplifier Device thermal performances All the figures given in this section are obtained assuming that the QFN device is cooled down only by conduction through the package thermal pad (no convection mode considered). The temperature is monitored at the package back-side interface (Tcase) as shown below. The system maximum temperature must be adjusted in order to guarantee that Tcase remains below than the maximum value specified in the next table. So, the system PCB must be designed to comply with this requirement. A derating must be applied on the dissipated power if the Tcase temperature can not be maintained below than the maximum temperature specified (see the curve Pdiss. Max) in order to guarantee the nominal device life time (MTTF). DEVICE THERMAL SPECIFICATION : CHA5050-QDG Recommended max. junction temperature (Tj max) : 141 Junction temperature absolute maximum rating : 175 Max. continuous dissipated power (Pdiss. Max.) : 1.4 => Pdiss. Max. derating above Tcase(1)= 85 °C : 24 Junction-Case thermal resistance (Rth J-C)(2) : <40 Minimum Tcase operating temperature(3) : -40 (3) Maximum Tcase operating temperature : 85 Minimum storage temperature : -55 Maximum storage temperature : 150 °C °C W mW/°C °C/W °C °C °C °C (1) Derating at junctio n temperature co nstant = Tj max. (2) Rth J-C is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the M M IC and all the devices biased. (3) Tcase=P ackage back side temperature measured under the die-attach-pad (see the drawing belo w). 1.6 1.2 1 0.8 0.6 0.4 Pdiss. Max. @Tj <Tj max (W) 0.2 0 -50 -25 0 25 50 75 100 125 150 175 Tcase Pdiss. Max. @Tj <Tj max (W) 1.4 Example: QFN 16L 3x3 Location of temeprature reference point (Tcase) on package's bottom side Tcase (°C) 6.1 Ref. : DSCHA5050QDG1216 - 04 Aug 11 3/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA5050-QDG 17-24GHz Medium Power Amplifier Typical Package Sij parameters Tamb.= +25°C, Vd = Vd1 = Vd2 = Vd3 = Vd4 = 6.0V, Id = 230mA Freq S11 PhS11 S12 PhS12 S21 PhS21 (GHz) (dB) (°) (dB) (°) (dB) (°) 2 -0.15 -43.46 -79.12 82.91 -93.09 164.10 3 -0.26 -65.21 -84.47 139.40 -79.29 25.76 4 -0.34 -86.45 -75.82 -124.90 -76.78 -141.20 5 -0.67 -109.30 -71.70 -131.10 -62.69 -122.80 6 -0.92 -130.50 -69.28 165.70 -51.22 169.10 7 -1.42 -151.70 -67.06 88.13 -39.69 100.50 8 -1.90 -175.20 -62.98 87.70 -28.67 26.75 9 -2.89 154.90 -65.44 44.97 -19.03 -56.92 10 -4.10 131.00 -66.59 -63.19 -12.25 -138.70 11 -6.29 110.20 -64.11 -74.28 -6.13 149.80 12 -10.06 82.48 -76.01 145.90 -1.12 78.12 13 -18.87 53.88 -58.93 114.50 3.47 15.51 14 -21.88 -162.80 -54.27 105.60 9.91 -44.55 15 -13.42 158.20 -52.66 87.41 16.80 -118.70 16 -16.95 115.40 -51.19 57.99 21.93 144.40 17 -15.06 177.90 -49.55 21.75 22.82 55.31 18 -9.61 150.10 -58.59 14.67 22.84 -23.65 19 -7.45 124.80 -58.33 7.12 22.45 -95.31 20 -6.66 100.90 -58.49 6.88 21.84 -158.90 21 -6.47 79.07 -55.71 49.41 21.94 140.30 22 -6.65 56.92 -64.74 17.23 22.25 79.89 23 -7.77 38.68 -52.31 77.06 22.66 18.99 24 -8.73 19.38 -49.00 47.85 23.47 -44.50 25 -11.58 12.05 -46.33 12.35 24.08 -115.30 26 -9.64 17.46 -48.81 -7.73 23.83 170.80 27 -6.74 -1.09 -48.77 -9.68 22.20 94.00 28 -4.45 -25.01 -45.91 13.83 19.73 19.57 29 -2.70 -54.65 -43.31 0.89 16.01 -53.66 30 -1.71 -84.20 -40.58 -23.57 11.45 -120.30 31 -1.09 -110.70 -38.13 -40.14 6.53 176.90 32 -0.43 -135.10 -36.52 -79.36 1.40 116.70 33 0.07 -157.60 -38.59 -141.90 -4.67 58.50 34 0.48 -178.40 -55.80 -143.50 -11.29 3.64 35 0.42 162.70 -54.29 -123.80 -19.26 -45.30 36 0.10 147.10 -50.38 -59.24 -27.82 -83.84 37 -0.19 133.00 -48.15 -44.33 -37.07 -93.46 38 -0.40 121.10 -44.07 -51.65 -40.71 -72.72 39 -0.50 108.50 -39.58 -75.49 -38.32 -78.30 40 -0.47 95.99 -38.86 -102.30 -38.42 -95.95 Ref. : DSCHA5050QDG1216 - 04 Aug 11 4/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 S22 (dB) -0.10 -0.17 -0.19 -0.41 -0.83 -1.61 -3.05 -5.89 -9.39 -19.41 -14.19 -9.91 -7.87 -6.51 -6.85 -9.02 -12.37 -19.02 -22.77 -21.18 -19.53 -18.83 -19.50 -28.26 -13.90 -8.81 -6.77 -5.28 -4.57 -4.14 -3.81 -3.30 -2.54 -1.92 -1.32 -0.94 -0.81 -0.71 -0.73 PhS22 (°) -42.52 -64.72 -88.18 -110.60 -138.00 -165.60 167.40 149.10 130.70 118.30 -153.90 -170.10 -179.50 158.40 128.00 102.40 68.24 40.89 31.90 11.18 -14.93 -45.54 -58.31 -19.30 14.74 -13.81 -37.10 -62.66 -92.53 -127.00 -165.60 158.70 128.80 104.80 86.13 70.42 57.16 44.64 30.49 Specifications subject to change without notice CHA5050-QDG 17-24GHz Medium Power Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +6.0V, Vg = -0.5V, Id = 230mA If no specific mention, the following values are representative of on board measurements (in QFN access planes) as defined on the paragraph ”Evaluation mother board”. Linear Gain & Return Loss versus frequency at room temperature 25 S21 20 Gain & Return Loss (dB) 15 10 5 0 -5 S11 -10 -15 S22 -20 -25 -30 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Frequency (GHz) Linear Gain versus frequency & temperature (-0.016dB/°C and per stage) 30 -40 °C +25 °C 28 +85 °C Linear Gain (dB) 26 24 22 20 18 16 17 18 19 20 21 22 23 24 25 26 Frequency (GHz) Ref. : DSCHA5050QDG1216 - 04 Aug 11 5/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA5050-QDG 17-24GHz Medium Power Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +6.0V, Vg = -0.5V, Id = 230mA Output Power at 1dB compression versus frequency 30 Ouput power at 1 dB compression (dBm) 29 28 27 26 25 24 23 22 21 20 17 18 19 20 21 22 23 24 25 26 Frequency (GHz) Gain & Output Power versus input power & frequency Gain (dB) & Output Power (dBm) 30 25 20 15 10 17 GHz 19 GHz 21 GHz 24 GHz 5 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 Pin (dBm) Ref. : DSCHA5050QDG1216 - 04 Aug 11 6/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA5050-QDG 17-24GHz Medium Power Amplifier Typical Board Measurements Vd = +6.0V, Vg = -0.5V, Id = 230mA Output IP3 versus frequency & temperature 35 34 33 0IP3 (dBm) 32 31 30 29 28 +25°C 27 -40°C +85°C 26 25 16 17 18 19 20 21 22 23 24 25 Frequency (GHz) Drain current versus Input Power & temperature @ 20GHz 0,35 -40°C +25°C 0,3 +85°C 0,25 Id (A) 0,2 0,15 0,1 0,05 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 Pin (dBm) Ref. : DSCHA5050QDG1216 - 04 Aug 11 7/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA5050-QDG 17-24GHz Medium Power Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +6.0V, Vg = -0.5V, Id = 230mA C/I3 versus Pout DCL & frequency at ambient temperature 55 50 45 C/I3 (dB) 40 35 30 25 20 17 GHz 19 GHz 21 GHz 24 GHz 15 10 7 9 11 13 15 17 19 21 23 25 Pout DCL (dBm) C/I3 versus Pout DCL at 17GHz C/I3 versus Pout DCL at 19GHz 55 55 -40 °C 50 50 +25 °C +85 °C 45 45 40 C/I3 (dB) C/I3 (dB) 40 35 30 35 30 25 25 20 20 15 15 10 10 -40 °C +25 °C 7 9 11 13 15 17 19 21 23 25 +85 °C 7 9 11 13 Pout DCL (dBm) C/I3 versus Pout DCL at 21GHz 17 19 21 23 25 C/I3 versus Pout DCL at 24GHz 55 55 50 50 45 45 40 40 C/I3 (dB) C/I3 (dB) 15 Pout DCL (dBm) 35 30 25 35 30 25 20 20 -40 °C -40 °C +25 °C 15 +25 °C 15 +85 °C 10 +85 °C 10 7 9 11 13 15 17 19 21 23 25 7 Pout DCL (dBm) Ref. : DSCHA5050QDG1216 - 04 Aug 11 9 11 13 15 17 19 21 23 25 Pout DCL (dBm) 8/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA5050-QDG 17-24GHz Medium Power Amplifier Package outline (1) Matt tin, Lead Free Units : From the standard : (Green) mm JEDEC MO-220 (VGGD) 25- GND 12345678- Nc GND(2) GND(2) RF out GND(2) GND(2) Vd4 GND(2) 910111213141516- Vd3 Vd2 GND(2) Vd1 GND(2) GND(2) RF in GND(2) 1718192021222324- GND(2) Nc Nc Nc Nc Vg Nc Nc (1) The package outline drawing included to this data-sheet is given for indication. Refer to the application note AN0017 (http://www.ums-gaas.com) for exact package dimensions. (2) It is strongly recommended to ground all pins marked “Gnd” through the PCB board. Ensure that the PCB board is designed to provide the best possible ground to the package. Ref. : DSCHA5050QDG1216 - 04 Aug 11 9/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA5050-QDG 17-24GHz Medium Power Amplifier Definition of the Sij reference planes The reference planes used for Sij measurements given above are symmetrical from the symmetrical axis of the package (see drawing beside). The input and output reference planes are located at 3.18mm offset (input wise and output wise respectively) from this axis. Then, the given Sij parameters incorporate the land pattern of the evaluation motherboard recommended in paragraph "Evaluation mother board". 3.18 Ref. : DSCHA5050QDG1216 - 04 Aug 11 10/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 3.18 Specifications subject to change without notice 17-24GHz Medium Power Amplifier CHA5050-QDG Evaluation mother board ■ Compatible with the proposed footprint. ■ Based on typically Ro4003 / 8mils or equivalent. ■ Using a micro-strip to coplanar transition to access the package. ■ Recommended for the implementation of this product on a module board. ■ Decoupling capacitors of 10nF 10%, 100pF 5% and 1µF 10% are recommended for all DC access. ■ See application note AN0017 for details. Ref. : DSCHA5050QDG1216 - 04 Aug 11 11/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA5050-QDG 17-24GHz Medium Power Amplifier Notes Ref. : DSCHA5050QDG1216 - 04 Aug 11 12/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 17-24GHz Medium Power Amplifier CHA5050-QDG DC Schematic Id=230mA Ref. : DSCHA5050QDG1216 - 04 Aug 11 13/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA5050-QDG 17-24GHz Medium Power Amplifier Recommended package footprint Refer to the application note AN0017 available at http://www.ums-gaas.com for package foot print recommendations. SMD mounting procedure For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN0017. Recommended environmental management Refer to the application note AN0019 available at http://www.ums-gaas.com for environmental data on UMS package products. Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS package products. Ordering Information QFN 4x4 RoHS compliant package: CHA5050-QDG/XY Stick: XY = 20 Tape & reel: XY = 21 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA5050QDG1216 - 04 Aug 11 14/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice