IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKP08N65F5 650VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IKP08N65F5 Highspeedswitchingseriesfifthgeneration Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwith RAPID1fastandsoftantiparalleldiode FeaturesandBenefits: C HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E C Applications: •Solarconverters •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitchingfrequencyconverters G C E KeyPerformanceandPackageParameters Type IKP08N65F5 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 650V 8A 1.6V 175°C K08EEF5 PG-TO220-3 2 Rev.2.1,2015-05-05 IKP08N65F5 Highspeedswitchingseriesfifthgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 3 Rev.2.1,2015-05-05 IKP08N65F5 Highspeedswitchingseriesfifthgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emitter voltage VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 18.0 11.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 24.0 A TurnoffsafeoperatingareaVCE≤650V,Tvj≤175°C - 24.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 20.0 12.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 24.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 70.0 35.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 2.20 K/W Diode thermal resistance, junction - case Rth(j-c) 2.90 K/W Thermal resistance junction - ambient Rth(j-a) 62 K/W 4 Rev.2.1,2015-05-05 IKP08N65F5 Highspeedswitchingseriesfifthgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. 650 - - VGE=15.0V,IC=8.0A Tvj=25°C Tvj=125°C Tvj=175°C - 1.60 1.80 1.90 2.10 - - 1.45 1.40 1.40 1.80 - 3.2 4.0 4.8 Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat V V Diode forward voltage VF VGE=0V,IF=9.0A Tvj=25°C Tvj=125°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.08mA,VCE=VGE Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=8.0A - 17.0 - S V V 40.0 µA 4000.0 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 500 - - 16 - - 3 - - 22.0 - nC - 7.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=520V,IC=8.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 10 - ns - 5 - ns - 116 - ns - 20 - ns - 0.07 - mJ - 0.02 - mJ - 0.09 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=4.0A, VGE=0.0/15.0V, RG(on)=48.0Ω,RG(off)=48.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 5 Rev.2.1,2015-05-05 IKP08N65F5 Highspeedswitchingseriesfifthgeneration Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=2.0A, VGE=0.0/15.0V, RG(on)=48.0Ω,RG(off)=48.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. - 9 - ns - 3 - ns - 129 - ns - 35 - ns - 0.04 - mJ - 0.02 - mJ - 0.06 - mJ - 41 - ns - 0.14 - µC - 6.6 - A - -160 - A/µs - 27 - ns - 0.10 - µC - 6.2 - A - -300 - A/µs DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=4.0A, diF/dt=800A/µs Tvj=25°C, VR=400V, IF=2.0A, diF/dt=800A/µs dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 9 - ns - 6 - ns - 145 - ns - 18 - ns - 0.10 - mJ - 0.03 - mJ - 0.13 - mJ - 9 - ns - 4 - ns - 165 - ns - 25 - ns - 0.06 - mJ - 0.02 - mJ - 0.08 - mJ IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=150°C, VCC=400V,IC=4.0A, VGE=0.0/15.0V, RG(on)=48.0Ω,RG(off)=48.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=150°C, VCC=400V,IC=2.0A, VGE=0.0/15.0V, RG(on)=48.0Ω,RG(off)=48.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 6 Rev.2.1,2015-05-05 IKP08N65F5 Highspeedswitchingseriesfifthgeneration DiodeCharacteristic,atTvj=150°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=150°C, VR=400V, IF=4.0A, diF/dt=800A/µs Tvj=150°C, VR=400V, IF=2.0A, diF/dt=800A/µs dirr/dt 7 - 56 - ns - 0.27 - µC - 7.5 - A - -134 - A/µs - 42 - ns - 0.19 - µC - 7.4 - A - -240 - A/µs Rev.2.1,2015-05-05 IKP08N65F5 Highspeedswitchingseriesfifthgeneration 80 70 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] 10 tp=1µs 10µs 50µs 1 100µs 200µs 500µs DC 0.1 1 60 50 40 30 20 10 10 100 0 1000 25 50 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C;VGE=15V. RecommendeduseatVGE≥7.5V) 24 16 21 125 150 175 VGE=20V 18V IC,COLLECTORCURRENT[A] 14 IC,COLLECTORCURRENT[A] 100 Figure 2. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 18 12 10 8 6 4 18 12V 10V 15 8V 7V 12 6V 9 5V 6 3 2 0 75 TC,CASETEMPERATURE[°C] 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) Figure 4. Typicaloutputcharacteristic (Tvj=25°C) 8 Rev.2.1,2015-05-05 IKP08N65F5 Highspeedswitchingseriesfifthgeneration 24 24 Tj=25°C Tj=150°C VGE=20V 21 21 18 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 18V 12V 10V 15 8V 7V 12 6V 9 5V 6 3 0 18 15 12 9 6 3 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 4 VCE,COLLECTOR-EMITTERVOLTAGE[V] 5 6 7 8 9 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=150°C) Figure 6. Typicaltransfercharacteristic (VCE=20V) IC=2A IC=4A IC=8A 100 1.75 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 2.00 1.50 1.25 td(off) tf td(on) tr 10 1.00 0.75 0 25 50 75 100 125 150 1 175 Tvj,JUNCTIONTEMPERATURE[°C] 0 3 6 9 12 15 18 21 24 IC,COLLECTORCURRENT[A] Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,rG=48Ω,Dynamictestcircuitin Figure E) 9 Rev.2.1,2015-05-05 IKP08N65F5 Highspeedswitchingseriesfifthgeneration td(off) tf td(on) tr 100 t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 100 10 1 5 15 25 35 45 55 65 75 td(off) tf td(on) tr 10 1 85 25 rG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,IC=4A,Dynamictestcircuitin Figure E) 100 125 150 175 0.8 typ. min. max. 5.0 Eoff Eon Ets 0.7 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 75 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=4A,rG=48Ω,DynamictestcircuitinFigure E) 5.5 4.5 4.0 3.5 3.0 2.5 2.0 0.6 0.5 0.4 0.3 0.2 0.1 1.5 1.0 50 Tvj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 0.0 175 Tvj,JUNCTIONTEMPERATURE[°C] 0 3 6 9 12 15 18 21 24 IC,COLLECTORCURRENT[A] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.08mA) 10 Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,rG=48Ω,Dynamictestcircuitin Figure E) Rev.2.1,2015-05-05 IKP08N65F5 Highspeedswitchingseriesfifthgeneration 0.200 0.200 Eoff Eon Ets 0.175 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 0.175 0.150 0.125 0.100 0.075 0.050 0.025 0.000 Eoff Eon Ets 0.150 0.125 0.100 0.075 0.050 0.025 5 15 25 35 45 55 65 75 0.000 85 25 rG,GATERESISTOR[Ω] 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 13. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,IC=4A,Dynamictestcircuitin Figure E) Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=4A,rG=48Ω,DynamictestcircuitinFigure E) 0.200 16 130V 520V 0.150 14 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] 0.175 Eoff Eon Ets 0.125 0.100 0.075 0.050 0.025 0.000 200 12 10 8 6 4 2 250 300 350 400 450 0 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150°C,VGE=15/0V, IC=4A,rG=48Ω,DynamictestcircuitinFigure E) 0.0 5.0 10.0 15.0 20.0 25.0 QGE,GATECHARGE[nC] Figure 16. Typicalgatecharge (IC=8A) 11 Rev.2.1,2015-05-05 IKP08N65F5 Highspeedswitchingseriesfifthgeneration 1000 Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] C,CAPACITANCE[pF] Ciss Coss Crss 100 10 1 0 5 10 15 20 25 1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 i: 1 2 3 4 ri[K/W]: 0.3389743 0.8017237 0.7055106 0.3537915 τi[s]: 2.2E-5 3.2E-4 3.0E-3 0.02235159 0.01 1E-6 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Figure 18. IGBTtransientthermalresistance (D=tp/T) 65 1 trr,REVERSERECOVERYTIME[ns] Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] 70 D=0.5 0.2 0.1 0.05 0.02 0.1 0.01 single pulse 0.01 1E-6 1E-5 1E-4 0.001 0.01 0.1 60 55 50 45 40 35 30 25 i: 1 2 3 4 ri[K/W]: 0.4457406 0.911159 0.9864113 0.5566891 τi[s]: 1.9E-5 2.4E-4 2.3E-3 0.02112308 0.001 1E-7 Tj=25°C, IF = 4A Tj=150°C, IF = 4A 20 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1 tp,PULSEWIDTH[s] diF/dt,DIODECURRENTSLOPE[A/µs] Figure 19. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) Figure 20. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 12 Rev.2.1,2015-05-05 IKP08N65F5 Highspeedswitchingseriesfifthgeneration 0.35 14 Tj=25°C, IF = 4A Tj=150°C, IF = 4A 13 Irr,REVERSERECOVERYCURRENT[A] Qrr,REVERSERECOVERYCHARGE[µC] Tj=25°C, IF = 4A Tj=150°C, IF = 4A 0.30 0.25 0.20 0.15 12 11 10 9 8 7 6 5 0.10 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 4 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs] Figure 21. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Figure 22. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) 0 27 Tj=25°C, IF = 4A Tj=150°C, IF = 4A 24 -50 21 -100 IF,FORWARDCURRENT[A] dIrr/dt,diodepeakrateoffallofIrr[A/µs] Tj=25°C Tj=150°C -150 -200 -250 -300 18 15 12 9 6 -350 3 -400 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 0 diF/dt,DIODECURRENTSLOPE[A/µs] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF,FORWARDVOLTAGE[V] Figure 23. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) Figure 24. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Rev.2.1,2015-05-05 IKP08N65F5 Highspeedswitchingseriesfifthgeneration 2.0 IF=4,5A IF=9A IF=18A VF,FORWARDVOLTAGE[V] 1.8 1.6 1.4 1.2 1.0 0.8 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 25. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 14 Rev.2.1,2015-05-05 IKP08N65F5 Highspeedswitchingseriesfifthgeneration Package Drawing PG-TO220-3 15 Rev.2.1,2015-05-05 IKP08N65F5 Highspeedswitchingseriesfifthgeneration Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 16 Rev.2.1,2015-05-05 IKP08N65F5 Highspeedswitchingseriesfifthgeneration RevisionHistory IKP08N65F5 Revision:2015-05-05,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2012-11-09 Preliminary data sheet 1.2 2013-12-17 New Marking Pattern 2.1 2015-05-05 Final data sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected] Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 17 Rev.2.1,2015-05-05