FMMT6517 350V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 350V IC = 500mA High Collector Current 350mW Power Dissipation hFE of 15 @ IC=100mA Complementary Part Number: FMMT6520 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per MILSTD-202, Method 208 Weight: 0.008 grams (Approximate) C SOT23 E C B B E Top View Top View Pin-Out Device Symbol Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel FMMT6517TA AEC-Q 517 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT23 517 FMMT6517 Datasheet Number: DS33122 Rev.4 - 2 517 = Product Type Marking Code 1 of 7 www.diodes.com February 2017 © Diodes Incorporated FMMT6517 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Unit Collector-Base Voltage Characteristic VCBO 350 V Collector-Emitter Voltage VCEO 350 V Emitter-Base Voltage VEBO 7 V IC 500 mA Collector Current Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 7) PD RθJA RθJL TJ,TSTG Value 310 350 403 357 350 -55 to +150 Unit mW °C/W °C/W °C ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady state condition. 6. Same as note (5), except the device is mounted on 15mm x 15mm 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of the leads). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FMMT6517 Datasheet Number: DS33122 Rev.4 - 2 2 of 7 www.diodes.com February 2017 © Diodes Incorporated FMMT6517 Thermal Characteristics and Derating information 400 Thermal Resistance (°C/W) Max Power Dissipation (W) 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 Temperature (°C) 350 300 250 200 D=0.5 150 100 D=0.1 Single Pulse D=0.2 50 0 100µ D=0.05 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Derating Curve Max Power Dissipation (W) 10 Single Pulse. T amb=25°C 1 0.1 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation FMMT6517 Datasheet Number: DS33122 Rev.4 - 2 3 of 7 www.diodes.com February 2017 © Diodes Incorporated FMMT6517 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO 350 — — V IC = 100µA Collector-Emitter Breakdown Voltage (Note 9) BVCEO 350 — — V IC = 1mA Emitter-Base Breakdown Voltage BVEBO 7 — — V IE = 100µA Collector Cutoff Current ICBO — — 50 nA VCB = 250V Emitter Cutoff Current IEBO — — 50 nA VEB = 6V hFE 20 30 30 20 15 — — — 200 200 — — IC = 1mA, VCE = 10V IC = 10mA, VCE = 10V IC = 30mA, VCE = 10V IC = 50mA, VCE = 10V IC = 100mA, VCE = 10V V IC = 10mA, IB = 1mA IC = 20mA, IB = 2mA IC = 30mA, IB = 3mA IC = 50mA, IB = 5mA Static Forward Current Transfer Ratio (Note 9) Test Condition Collector-Emitter Saturation Voltage (Note 9) VCE(SAT) — — 0.3 0.35 0.5 1.0 Base-Emitter Saturation Voltage (Note 9) VBE(SAT) — — 0.80 0.85 0.90 V IC = 10mA, IB = 1mA IC = 20mA, IB = 2mA IC = 30mA, IB = 3mA Base-Emitter Turn-On Voltage (Note 9) VBE(ON) — — 2.0 V IC = 100mA, VCE = 10V Output Capacitance COBO — — 6 pF VCB = 20V. f = 1MHz Transition Frequency fT 50 — — MHz Note: VCE = 20V, IC = 10mA, f = 20MHz 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. FMMT6517 Datasheet Number: DS33122 Rev.4 - 2 4 of 7 www.diodes.com February 2017 © Diodes Incorporated FMMT6517 Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 1.6 0.40 Tamb=25°C VCE(SAT) (V) 1.2 IC/IB=50 1.0 0.8 0.6 IC/IB=10 0.4 0.30 0.25 150°C 0.20 100°C 0.15 25°C 0.10 0.2 0.0 IC/IB=10 0.35 IC/IB=20 VCE(SAT) (V) 1.4 0.05 -55°C 1 10 100 IC Collector Current (mA) 1k 1 10 IC Collector Current (mA) VCE(SAT) v IC VCE(SAT) v IC 1.6 1000 VCE=10V IC/IB=20 1.4 100°C 1.2 VBE(SAT) (V) Typical Gain (hFE) 100 100 25°C -55°C 10 -55°C 1.0 25°C 0.8 0.6 0.4 100°C 150°C 0.2 11 10 100 1k 0.0 10k 1 10 100 1k IC Collector Current (mA) IC Collector Current (mA) VBE(SAT) v IC hFE v IC 1.6 VCE=10V 1.4 VBE(ON) (V) 1.2 -55°C 1.0 25°C 0.8 0.6 0.4 100°C 150°C 0.2 0.0 1 10 100 1k IC Collector Current (mA) VBE(ON) v IC FMMT6517 Datasheet Number: DS33122 Rev.4 - 2 5 of 7 www.diodes.com February 2017 © Diodes Incorporated FMMT6517 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X Note: Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device Terminals and PCB tracking. FMMT6517 Datasheet Number: DS33122 Rev.4 - 2 6 of 7 www.diodes.com February 2017 © Diodes Incorporated FMMT6517 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2017, Diodes Incorporated www.diodes.com FMMT6517 Datasheet Number: DS33122 Rev.4 - 2 7 of 7 www.diodes.com February 2017 © Diodes Incorporated