ON NTJS3157N Trench power mosfet Datasheet

NTJS3157N
Trench Power MOSFET
20 V, 4.0 A, Single N−Channel, SC−88
Features
• Leading Trench Technology for Low RDS(ON) Extending Battery Life
• Fast Switching for Increased Circuit Efficiency
• SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board
•
Utilization, Same as SC−70−6
These are Pb−Free Devices
http://onsemi.com
V(BR)DSS
RDS(on) Typ
ID Max
45 mW @ 4.5 V
20 V
4.0 A
55 mW @ 2.5 V
70 mW @ 1.8 V
Applications
• DC−DC Conversion
• Low Side Load Switch
• Cell Phones, Computing, Digital Cameras, MP3s and PDAs
SC−88 (SOT−363)
D
1
6
D
D
2
5
D
G
3
4
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±8.0
V
ID
3.2
A
Parameter
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25 °C
TA = 85 °C
2.3
t≤5s
TA = 25 °C
4.0
Steady
State
TA = 25 °C
Top View
PD
1.0
W
IDM
10
A
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
1.6
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
MARKING DIAGRAM &
PIN ASSIGNMENT
D
1
SOT−363
CASE 419B
STYLE 28
Parameter
Symbol
Max
Unit
Junction−to−Ambient – Steady State
RqJA
125
°C/W
Junction−to−Ambient − t ≤ 5 s
RqJA
80
Junction−to−Lead – Steady State
RqJL
45
January, 2013 − Rev. 3
T92 M G
G
1
D
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2013
T92
M
G
S
6
D
THERMAL RESISTANCE RATINGS (Note 1)
D
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTJS3157N/D
NTJS3157N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
12
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 16 V
V
mV/°C
TJ = 25°C
1.0
TJ = 85°C
5.0
VDS = 0 V, VGS = ±8.0 V
±100
mA
nA
ON CHARACTERISTICS (Note 2)
VGS(TH)
Gate Threshold Voltage
0.40
1.0
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
−4.0
Drain−to−Source On Resistance
RDS(on)
VGS = 4.5 V, ID = 4.0 A
45
60
Forward Transconductance
gFS
V
mV/°C
mW
VGS = 2.5 V, ID = 3.6 A
55
70
VGS = 1.8 V, ID = 2.0 A
70
85
VGS = 10 V, ID = 3.2 A
9.0
S
500
pF
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
CISS
COSS
CRSS
VGS = 0 V, f = 1.0 MHz,
VDS = 10 V
QG(TOT)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
75
60
15
nC
6.0
15
ns
12
25
21
45
11
25
0.7
1.0
6.9
VGS = 4.5 V, VDS = 10 V,
ID = 3.2 A
1.0
1.8
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
td(on)
tr
td(off)
Fall Time
VGS = 4.5 V, VDD = 10 V,
ID = 0.5 A, RG = 6.0 W
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
Ta
Discharge Time
Tb
Reverse Recovery Charge
VGS =0 V,
IS = 1.6 A
TJ = 25°C
15
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 1.6 A
QRR
http://onsemi.com
2
ns
12
3.0
5.0
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
V
nC
NTJS3157N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
12
8
VDS ≥ 10 V
VGS = 1.8 V
8V
4V
2V
TJ = 25°C
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
10
1.6 V
6
1.4 V
4
2
1.2 V
0.8 V
1V
0
0
1
2
3
4
5
6
7
8
9
10
8
6
4
0
10
TJ = 125°C
2.5
0.5
1
2
1.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.25
ID = 4 A
TJ = 25°C
0.15
0.1
0.05
0
1
3
5
7
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.1
0.08
0.07
VGS = 1.8 V
0.06
0.05
VGS = 2.5 V
0.04
VGS = 4.5 V
0.03
1
2
3
4
5
6
7
ID, DRAIN CURRENT (AMPS)
10000
ID = 4.0 A
VGS = 4.5 V
9
VGS = 0 V
TJ = 150°C
1.4
1.2
1000
1
TJ = 100°C
0.8
0.6
−50
8
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
TJ = 25°C
0.09
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.8
3
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
0.2
25°C
TJ = −55°C
2
−25
0
25
50
75
100
125
150
100
2
4
6
8
10
12
14
16
18
20
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
NTJS3157N
VDS = 0 V
C, CAPACITANCE (pF)
1200
VGS = 0 V
TJ = 25°C
Ciss
1000
800
600
Ciss
Crss
400
200
0
8
Coss
Crss
4
VGS
0
VDS
8
4
12
16
20
5
4
VDS
6
QGS
2
0
td(on)
1
1
10
2
ID = 3.2 A
TJ = 25°C
1
0
6
tf
tr
10
4
3
5
2
4
6
Qg, TOTAL GATE CHARGE (nC)
7
8
0
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
td(off)
QGD
1
Figure 7. Capacitance Variation
VDS = 10 V
ID = 0.5 A
VGS = 4.5 V
8
VGS
3
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
100
10
QG(TOT)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1400
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = 0 V
TJ = 25°C
5
4
3
2
1
0
0.2
100
0.3
RG, GATE RESISTANCE (OHMS)
0.4
0.5
0.6
0.7
0.8
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
http://onsemi.com
4
1
NTJS3157N
ORDERING INFORMATION
Package
Shipping†
NTJS3157NT1G
SC−88
(Pb−Free)
3000 Tape & Reel
NTJS3157NT2G
SC−88
(Pb−Free)
3000 Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
NTJS3157N
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
2X
aaa H D
D
H
A
D
6
5
GAGE
PLANE
4
1
2
L
L2
E1
E
DETAIL A
3
aaa C
2X
bbb H D
2X 3 TIPS
e
B
6X
ddd
C A-B D
M
A2
DETAIL A
A
ccc C
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
b
TOP VIEW
6X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
A1
SIDE VIEW
C
SEATING
PLANE
END VIEW
c
RECOMMENDED
SOLDERING FOOTPRINT*
6X
6X
0.30
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
INCHES
MIN
NOM MAX
−−−
−−− 0.043
0.000
−−− 0.004
0.027 0.035 0.039
0.006 0.008 0.010
0.003 0.006 0.009
0.070 0.078 0.086
0.078 0.082 0.086
0.045 0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTJS3157N/D