SO T2 23 BTA2008W-600D 3Q Hi-Com Triac 14 August 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT223 surface mountable plastic package. This "series D" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including microcontrollers. 2. Features and benefits • • • • • • • • 3Q technology for improved noise immunity Direct gate triggering from low power drivers and logic ICs High commutation capability with sensive gate High voltage capability Planar passivated for voltage ruggedness and reliability Surface mountable package Triggering in three quadrants only Very sensitive gate for easy logic level triggering 3. Applications • • • Low power motor controls Small inductive loads e.g. solenoids, door locks, water valves Small loads in large white goods 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM Conditions Min Typ Max Unit repetitive peak offstate voltage - - 600 V ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 - - 9 A IT(RMS) RMS on-state current - - 0.8 A 0.25 - 5 mA full sine wave; Tsp ≤ 111 °C; Fig. 1; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 9 Scan or click this QR code to view the latest information for this product BTA2008W-600D NXP Semiconductors 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G-; 0.25 - 5 mA 0.25 - 5 mA Tj = 25 °C; Fig. 9 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 9 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate 4 mb mounting base; connected to main terminal 2 Graphic symbol 4 T2 sym051 1 2 T1 G 3 SC-73 (SOT223) 6. Ordering information Table 3. Ordering information Type number BTA2008W-600D BTA2008W-600D Product data sheet Package Name Description Version SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 All information provided in this document is subject to legal disclaimers. 14 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 14 BTA2008W-600D NXP Semiconductors 3Q Hi-Com Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tsp ≤ 111 °C; Fig. 1; Min Max Unit - 600 V - 0.8 A - 9 A - 9.9 A Fig. 2; Fig. 3 ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms I t I t for fusing tp = 10 ms; SIN - 0.41 A s dIT/dt rate of rise of on-state current IT = 1.5 A; IG = 20 mA; dIG/dt = 0.2 A/µs - 100 A/µs IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.1 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C 2 2 over any 20ms period 003aag395 6 003aag396 1 IT(RMS) (A) 0.8 IT(RMS) (A) 2 111°C 4 0.6 0.4 2 0.2 0 10-2 10-1 0 -50 1 10 surge duration (s) f = 50 Hz; Tsp = 111 °C Fig. 1. Fig. 2. RMS on-state current as a function of surge duration; maximum values BTA2008W-600D Product data sheet 50 100 Tsp (°C) 150 RMS on-state current as a function of lead temperature; maximum values All information provided in this document is subject to legal disclaimers. 14 August 2014 0 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 14 BTA2008W-600D NXP Semiconductors 3Q Hi-Com Triac 003aac118 1.0 Ptot (W) 0.8 0.6 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 α = 180° 120° 90° α 60° 30° 0.4 0.2 0.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 IT(RMS) (A) α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 003aag393 12 ITSM (A) 8 ITSM IT 4 t 1/f 0 Tj(init) = 25 °C max 1 102 10 number of cycles 103 f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA2008W-600D Product data sheet All information provided in this document is subject to legal disclaimers. 14 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 14 BTA2008W-600D NXP Semiconductors 3Q Hi-Com Triac 003aag394 103 ITSM IT ITSM (A) t 102 tp Tj(init) = 25 °C max (1) 10 1 10-5 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms; (1) dIT/dt limit Fig. 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values BTA2008W-600D Product data sheet All information provided in this document is subject to legal disclaimers. 14 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 14 BTA2008W-600D NXP Semiconductors 3Q Hi-Com Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-sp) thermal resistance from junction to solder point full or half cycle; Fig. 6 - - 15 K/W Rth(j-a) thermal resistance from junction to ambient in free air; printed-circuit board mounted: minimum footprint; Fig. 7 - 156 - K/W in free air; printed-circuit board mounted: minimum pad area; Fig. 8 - 70 - K/W 003aac210 102 Z th(j-sp) (K/W) 10 1 P 10-1 10-2 10-5 Fig. 6. tp 10-4 10-3 10-2 10-1 1 tp (s) t 10 Transient thermal impedance from junction to solder point as a function of pulse width BTA2008W-600D Product data sheet All information provided in this document is subject to legal disclaimers. 14 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 14 BTA2008W-600D NXP Semiconductors 3Q Hi-Com Triac 3.8 min 36 1.5 min 18 6.3 1.5 min (3×) 60 9 4.5 4.6 2.3 10 1.5 min 4.6 001aab508 Fig. 7. 7 All dimensions are in mm 15 Minimum footprint SOT223 50 001aab509 All dimensions are in mm Printed circuit board: FR4 epoxy glass (1.6 mm thick), copper laminate (35 um thick) Fig. 8. BTA2008W-600D Product data sheet Printed circuit board pad area: SOT223 All information provided in this document is subject to legal disclaimers. 14 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 14 BTA2008W-600D NXP Semiconductors 3Q Hi-Com Triac 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; 0.25 - 5 mA 0.25 - 5 mA 0.25 - 5 mA - - 10 mA - - 20 mA - - 10 mA Static characteristics IGT gate trigger current Tj = 25 °C; Fig. 9 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 9 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 9 IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 10 VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 10 VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 10 IH holding current VD = 12 V; Tj = 25 °C; Fig. 11 - - 10 mA VT on-state voltage IT = 0.85 A; Tj = 25 °C; Fig. 12 - 1.35 1.6 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; - 0.9 1.5 V 0.2 0.3 - V VD = 600 V; Tj = 125 °C - 0.1 0.5 mA VDM = 402 V; Tj = 125 °C; (VDM = 67% 200 - - V/µs 0.5 - - A/ms Fig. 12 VD = 400 V; IT = 0.1 A; Tj = 125 °C; Fig. 12 ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage of VDRM); exponential waveform; gate open circuit dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 0.8 A; dVcom/dt = 10 V/µs; gate open circuit BTA2008W-600D Product data sheet All information provided in this document is subject to legal disclaimers. 14 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 14 BTA2008W-600D NXP Semiconductors 3Q Hi-Com Triac 003aaa959 3 003aak510 3 IGT IL IGT(25°C) IL(25°C) 2 2 (1) (2) (3) 1 1 (3) (2) (1) 0 - 50 0 50 100 Tj (°C) 0 -50 150 (1) T2- G(2) T2+ G(3) T2+ G+ Fig. 9. 0 50 100 Tj (°C) 150 Fig. 10. Normalized latching current as a function of junction temperature Normalized gate trigger current as a function of junction temperature 003aak511 3 003aac114 1 IT (A) IH IH(25°C) 0.8 2 0.6 (2) (1) 0.4 (3) 1 0.2 0 -50 0 50 100 Tj (°C) 0 150 0 0.5 1 1.5 VT (V) 2 Vo = 0.835 V; Rs = 0.50 Ω Fig. 11. Normalized holding current as a function of junction temperature (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 12. On-state current as a function of on-state voltage BTA2008W-600D Product data sheet All information provided in this document is subject to legal disclaimers. 14 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 14 BTA2008W-600D NXP Semiconductors 3Q Hi-Com Triac 10. Package outline Plastic surface-mounted package with increased heatsink; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 e1 3 Lp bp w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT223 JEITA SC-73 EUROPEAN PROJECTION ISSUE DATE 04-11-10 06-03-16 Fig. 13. Package outline SC-73 (SOT223) BTA2008W-600D Product data sheet All information provided in this document is subject to legal disclaimers. 14 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 14 BTA2008W-600D NXP Semiconductors 3Q Hi-Com Triac 11. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig. 14. Reflow soldering footprint for SC-73 (SOT223) 8.9 6.7 1.9 solder lands 4 solder resist 6.2 1 2 8.7 Dimensions in mm 3 1.9 (3×) 2.7 occupied area preferred transport direction during soldering 2.7 1.1 1.9 (2×) sot223_fw Fig. 15. Wave soldering footprint for SC-73 (SOT223) BTA2008W-600D Product data sheet All information provided in this document is subject to legal disclaimers. 14 August 2014 © NXP Semiconductors N.V. 2014. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Limiting values .......................................................3 8 Thermal characteristics .........................................6 9 Characteristics ....................................................... 8 10 Package outline ................................................... 10 11 Soldering .............................................................. 11 12 12.1 12.2 12.3 12.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 14 August 2014 BTA2008W-600D Product data sheet All information provided in this document is subject to legal disclaimers. 14 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 14 / 14