Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) hD (%) Output PAR (dB) ACPR (dBc) 920 MHz 19.9 37.7 6.1 - 36.2 940 MHz 19.9 37.1 6.1 - 36.6 960 MHz 19.5 36.8 6.0 - 36.0 MRF8S9200NR3 920 - 960 MHz, 58 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFET • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 200 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Typical Pout @ 1 dB Compression Point ] 200 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • 225°C Capable Plastic Package • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. CASE 2021 - 01, STYLE 1 OM - 780 - 2 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +70 Vdc Gate - Source Voltage VGS - 6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 58 W CW Case Temperature 80°C, 200 W CW RθJC 0.30 0.25 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2009. All rights reserved. RF Device Data Freescale Semiconductor MRF8S9200NR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit 3 260 °C Per JESD22 - A113, IPC/JEDEC J - STD - 020 Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) VGS(th) 1.5 2.3 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test) VGS(Q) 2.3 3 3.8 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3.3 Adc) VDS(on) 0.1 0.2 0.3 Vdc Off Characteristics On Characteristics Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg., f = 940 MHz, Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 18 19.9 21 dB Drain Efficiency ηD 34 37.1 — % PAR 5.8 6.1 — dB ACPR — - 36.6 - 35 dBc IRL — - 22 -9 dB Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg., Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency Gps (dB) hD (%) Output PAR (dB) ACPR (dBc) IRL (dB) 920 MHz 19.9 37.7 6.1 - 36.2 - 14 940 MHz 19.9 37.1 6.1 - 36.6 - 22 960 MHz 19.5 36.8 6.0 - 36.0 - 15 1. Part internally matched both on input and output. (continued) MRF8S9200NR3 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 920 - 960 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 200 — — 15 — W IMD Symmetry @ 160 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 45 — MHz Gain Flatness in 40 MHz Bandwidth @ Pout = 58 W Avg. GF — 0.7 — dB Gain Variation over Temperature ( - 30°C to +85°C) ΔG — 0.012 — dB/°C ΔP1dB — 0.001 — dBm/°C Output Power Variation over Temperature ( - 30°C to +85°C) MHz MRF8S9200NR3 RF Device Data Freescale Semiconductor 3 C29 R1 B1 VGS C22 C4 C21 C5 C25 C26 C31 VDS C6 C7 R2 C11 C1 C2 C3 C8 C9 CUT OUT AREA C10 C19 C12 C15 C14 C16 C17 C18 C20 C13 C32 C27 C28 C23 C24 C30 MRF8S9200N Rev 0 Figure 1. MRF8S9200NR3 Test Circuit Component Layout Table 6. MRF8S9200NR3 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Ferrite Beads, Short 2743019447 Fair - Rite C1, C5, C19, C21, C22, C23, C24 39 pF Chip Capacitors ATC100B390JT500XT ATC C2 2 pF Chip Capacitor ATC100B2R0BT500XT ATC C3 6.2 pF Chip Capacitor ATC100B6R2BT500XT ATC C4 2.2 μF Chip Capacitor C1825C225J5RAC - TU Kemet C6, C7, C8, C9 3.3 pF Chip Capacitors ATC100B3R3CT500XT ATC C10, C12 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC C11, C13 5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC C14, C20 0.8 pF Chip Capacitors ATC100B0R8BT500XT ATC C15, C17 0.5 pF Chip Capacitors ATC100B0R5BT500XT ATC C16 1.5 pF Chip Capacitor ATC100B1R5BT500XT ATC C18 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC C25, C26, C27, C28 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C29, C30 470 μF, Electrolytic Capacitors MCGPR63V477M13X26 - RH Multicomp C31 47 μF, 50 V Electrolytic Capacitor 476KXM050M Illinois Cap. C32 10 pF Chip Capacitor ATC100B100JT500XT ATC R1 3.3 Ω, 1/2 W Chip Resistor P3.3VCT - ND Panasonic R2 0 Ω, 3.5 A Chip Resistor CRCW12060000Z0EA Vishay PCB 0.030″, εr = 3.5 RF - 35 Taconic MRF8S9200NR3 4 RF Device Data Freescale Semiconductor 21 20.5 ηD 42 40 38 Gps 19 −30 −5 18 −32 −10 17.5 −34 IRL ACPR 17 −36 −38 16.5 16 800 PARC 825 850 875 900 925 950 975 −15 −20 −25 −40 1000 −30 0 −0.5 −1 −1.5 PARC (dB) Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF IRL, INPUT RETURN LOSS (dB) 36 18.5 ACPR (dBc) Gps, POWER GAIN (dB) 20 19.5 44 VDD = 28 Vdc, Pout = 58 W (Avg.) IDQ = 1400 mA, Single−Carrier W−CDMA 3.84 MHz Channel Bandwidth ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS −2 −2.5 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 2. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 58 Watts Avg. −10 VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1400 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 940 MHz −20 IM3−U −30 IM3−L IM5−U −40 IM5−L IM7−L −50 IM7−U −60 10 1 100 TWO−TONE SPACING (MHz) Figure 3. Intermodulation Distortion Products versus Two - Tone Spacing 18.5 18 17.5 17 Gps 0 −1 ηD PARC −2 55 −20 50 −25 45 ACPR −1 dB = 49.04 W 40 −3 dB = 95.95 W −2 dB = 69.69 W −3 −4 −5 30 35 VDD = 28 Vdc, IDQ = 1400 mA, f = 940 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 50 70 90 110 −30 −35 ACPR (dBc) 19 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) 19.5 1 ηD, DRAIN EFFICIENCY (%) 20 −40 30 −45 25 −50 130 Pout, OUTPUT POWER (WATTS) Figure 4. Output Peak - to - Average Ratio Compression (PARC) versus Output Power MRF8S9200NR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 23 Gps, POWER GAIN (dB) 22 21 20 19 960 MHz 940 MHz 18 920 MHz 50 40 17 30 16 ACPR 20 ηD 15 −20 −24 1 10 0 300 100 −36 −40 −44 −48 −52 −56 10 14 −28 −32 ACPR (dBc) 100 VDD = 28 Vdc, IDQ = 1400 mA, Single−Carrier 960 MHz 90 W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% 940 MHz 920 MHz 80 Probability on CCDF 960 MHz 70 Gps f = 920 MHz 60 ηD, DRAIN EFFICIENCY (%) 24 −60 Pout, OUTPUT POWER (WATTS) AVG. Figure 5. Single - Carrier W - CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 10 25 5 20 Gain 0 −5 10 −10 5 IRL 0 −5 −15 −20 VDD = 28 Vdc Pin = 0 dBm IDQ = 1400 mA −10 −15 550 750 650 850 IRL (dB) GAIN (dB) 15 −25 950 1050 1150 1250 −30 1350 f, FREQUENCY (MHz) Figure 6. Broadband Frequency Response W - CDMA TEST SIGNAL 100 10 0 −10 Input Signal −30 0.1 0.01 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 0 1 2 3 4 5 6 −50 +ACPR in 3.84 MHz Integrated BW −ACPR in 3.84 MHz Integrated BW −70 −80 7 8 9 Figure 7. CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal MRF8S9200NR3 −40 −60 PEAK−TO−AVERAGE (dB) 6 3.84 MHz Channel BW −20 1 (dB) PROBABILITY (%) 10 10 −90 −100 −9 −7.2 −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 8. Single - Carrier W - CDMA Spectrum RF Device Data Freescale Semiconductor VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg. f MHz Zsource W Zload W 820 1.16 - j2.85 2.29 - j2.08 840 1.09 - j2.63 2.11 - j1.95 860 1.04 - j2.45 1.94 - j1.81 880 0.98 - j2.27 1.76 - j1.68 900 0.93 - j2.08 1.59 - j1.51 920 0.88 - j1.90 1.42 - j1.33 940 0.83 - j1.72 1.28 - j1.13 960 0.79 - j1.55 1.14 - j0.93 980 0.76 - j1.39 1.02 - j0.73 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF8S9200NR3 RF Device Data Freescale Semiconductor 7 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 59 f = 960 MHz Pout, OUTPUT POWER (dBm) 58 f = 940 MHz 57 f = 920 MHz 56 Actual 55 Ideal 54 53 f = 960 MHz f = 920 MHz 52 f = 940 MHz 51 50 49 30 31 32 33 34 35 36 37 38 39 40 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB P3dB f (MHz) Watts dBm Watts dBm 920 267 54.3 332 55.2 940 263 54.2 327 55.1 960 261 54.2 327 55.2 Test Impedances per Compression Level f (MHz) Zsource Ω Zload Ω 920 P1dB 0.70 - j1.66 0.82 - j1.52 940 P1dB 0.68 - j1.85 0.73 - j1.60 960 P1dB 0.87 - j1.99 0.76 - j1.70 Figure 10. Pulsed CW Output Power versus Input Power @ 28 V MRF8S9200NR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S9200NR3 RF Device Data Freescale Semiconductor 9 MRF8S9200NR3 10 RF Device Data Freescale Semiconductor MRF8S9200NR3 RF Device Data Freescale Semiconductor 11 PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Aug. 2009 Description • Initial Release of Data Sheet MRF8S9200NR3 12 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009. All rights reserved. MRF8S9200NR3 Document Number: RF Device Data MRF8S9200N Rev. 0, 8/2009 Freescale Semiconductor 13