PD - 90819B IRHN7450 JANSR2N7270U 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) REF: MIL-PRF-19500/603 ® RAD-Hard HEXFET TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHN7450 100K Rads (Si) IRHN3450 300K Rads (Si) IRHN4450 500K Rads (Si) RDS(on) 0.45Ω 0.45Ω 0.45Ω ID 11A 11A 11A QPL Part Number JANSR2N7270U JANSF2N7270U JANSG2N7270U IRHN8450 0.45Ω 11A JANSH2N7270U 1000K Rads (Si) SMD-1 International Rectifier’s RAD-HardTM HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current À PD @ T C = 25°C VGS EAS IAR EAR dv/dt TJ T STG Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range PCKG. Mounting Surface Temp. Weight Units 11 7.0 44 150 1.2 ±20 500 11 15 3.5 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (for 5s) 2.6 (Typical) C g For footnotes refer to the last page www.irf.com 1 05/18/06 IRHN7450, JANSR2N7270U Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage 500 — — V — 0.6 — V/°C — — 2.0 4.0 — — — — — — — — 0.45 0.50 4.0 — 50 250 ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 4.0 100 -100 150 30 75 45 190 190 130 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 4000 330 52 — — — Ω V S( ) Ω BVDSS µA nA nC ns nH pF Test Conditions VGS =0 V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 7.0A VGS = 12V, ID = 11A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 7.0A VDS= 400V,VGS=0V VDS = 400V VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID = 11A VDS = 250V VDD = 250V, ID = 11A, VGS = 12V, RG = 2.35Ω Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD trr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 11 44 1.6 1100 16 Test Conditions A V ns µC Tj = 25°C, IS = 11A, VGS = 0V à Tj = 25°C, IF = 11A, di/dt ≥ 100A/µs VDD ≤ 50V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max Units — — — 6.6 0.83 — °C/W Test Conditions soldered to a 1”sq. copper-clad board Note: Corresponding Spice and Saber models are available on the International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHN7450, JANSR2N7270U International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads(Si)1 Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Static Drain-to-Source à On-State Resistance (SMD-1) Diode Forward Voltage à 300K- 1000K Rads (Si)2 Test Conditions Units Min Max Min Max 500 2.0 — — — — — 4.0 100 -100 50 0.45 500 1.25 — — — — — 4.5 100 -100 50 0.6 µA Ω VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA V GS = 20V VGS = -20 V VDS =400V, VGS = 0V VGS = 12V, ID = 7.0A — 0.45 — 0.6 Ω VGS = 12V, ID =7.0A — 1.6 — 1.6 V VGS = 0V, IS = 11A V nA 1. Part number IRHN7450 (JANSR2N7270U) 2. Part numbers IRHN3450 (JANSF2N7270U), IRHN4450 (JANSG2N7270U) and IRHN8450 (JANSH2N7270U) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LET Ni VDS (V) Energy Range (MeV/(mg/cm )) (MeV) (µm) @ VGS=0V @VGS=-5V 28 265 41 275 275 2 @VGS=-10V @VGS=-15V @VGS=-20V - - - 400 VDS 300 Ni 200 100 0 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHN7450, JANSR2N7270U Post-Irradiation Pre-Irradiation Fig 1. Typical Response of Gate Threshhold Fig 2. Typical Response of On-State Resistance Voltage Vs. Total Dose Exposure Vs. Total Dose Exposure Fig 3. Typical Response of Transconductance Vs. Total Dose Exposure 4 Fig 4. Typical Response of Drain to Source Breakdown Vs. Total Dose Exposure www.irf.com Post-Irradiation Pre-Irradiation IRHN7450, JANSR2N7270U Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure Fig 6. Typical On-State Resistance Vs. Neutron Fluence Level Fig 8a. Gate Stress of VGSS Equals 12 Volts During Radiation Fig 7. Typical Transient Response of Rad Hard HEXFET During 1x1012 Rad (Si)/Sec Exposure www.irf.com Fig 8b. VDSS Stress Equals 80% of BVDSS During Radiation Fig 9. High Dose Rate (Gamma Dot) Test Circuit 5 RadiationPost-Irradiation Characteristics Pre-Irradiation IRHN7450, JANSR2N7270U Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc Fig 10. Typical Output Characteristics Pre-Irradiation Fig 11. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 12. Typical Output Characteristics Post-Irradiation 300K Rads (Si) Fig 13. Typical Output Characteristics Post-Irradiation 1 Mega Rads (Si) 6 www.irf.com Radiation Characteristics Pre-Irradiation IRHN7450, JANSR2N7270U Note: Bias Conditions during radiation: VGS = 0 Vdc, VDS = 400 Vdc Fig 14. Typical Output Characteristics Pre-Irradiation Fig 15. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 16. Typical Output Characteristics Post-Irradiation 300K Rads (Si) Fig 17. Typical Output Characteristics Post-Irradiation 1 Mega Rads (Si) www.irf.com 7 IRHN7450, JANSR2N7270U Fig 18. Typical Output Characteristics Fig 20. Typical Transfer Characteristics 8 Pre-Irradiation Fig 19. Typical Output Characteristics Fig 21. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation Fig 22. Typical Capacitance Vs. Drain-to-Source Voltage Fig 24. Typical Source-Drain Diode Forward Voltage www.irf.com IRHN7450, JANSR2N7270U Fig 23. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 25. Maximum Safe Operating Area 9 IRHN7450, JANSR2N7270U Pre-Irradiation VDS V GS RD D.U.T. RG + - VDD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 27a. Switching Time Test Circuit VDS 90% Fig 26. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 27b. Switching Time Waveforms Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case 10 www.irf.com Pre-Irradiation IRHN7450, JANSR2N7270U 15V L VDS D.U.T RG IAS VGS 20V DRIVER + - VDD A 0.01Ω tp Fig 29a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 29c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 29b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 30a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 30b. Gate Charge Test Circuit 11 IRHN7450, JANSR2N7270U Pre-Irradiation Foot Notes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25°C, L ≥ 7.4mH Peak IL = 11A, VGS =12V  I SD ≤ 11A, di/dt ≤ 140A/µs, VDD ≤ 500V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 400 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-1 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/2006 12 www.irf.com