Transistors SMD Type NPN Transistors CP380 SOT-23-3 Unit: mm 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● Collector Emitter Voltage VCEO=30V 1 0.55 ● Collector Current Capability IC=50mA +0.2 1.6 -0.1 +0.2 2.8 -0.1 ■ Features 2 +0.02 0.15 -0.02 +0.2 1.1 -0.1 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1. Base 0-0.1 +0.1 0.68 -0.1 2. Emitter 3. Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 Emitter - Base Voltage VEBO 4 Collector Current - Continuous IC 50 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature Range Unit V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 35 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 30 4 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 Collector-base cut-off current ICBO VCB= 35 V , IE= 0 Emitter cut-off current IEBO VEB= 4V , I C=0 Typ Max V 0.1 1 Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB=1mA 0.4 Base - emitter saturation voltage VBE(sat) IC=10 mA, IB=1mA 1.2 DC current gain hFE VCE= 12V, IC= 2mA Collector output capacitance Cob VCB= 10V, IE=0,f=1MHz Transition frequency fT VCE= 10V, IE= -1mA Unit 70 uA V 240 3.2 100 pF MHz ■ Classification of hfe Type CP380-O Range 70-140 Marking CP380-Y 120-240 380 www.kexin.com.cn 1