Fairchild FDPF24N40 N-channel mosfet 400v, 24a, 0.175î© Datasheet

UniFETTM
FDP24N40 / FDPF24N40
N-Channel MOSFET
400V, 24A, 0.175Ω
Features
Description
• RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 12A
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low gate charge ( Typ. 46nC)
• Low Crss ( Typ. 25pF)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
D
G
G D S
TO-220
FDP Series
TO-220F
FDPF Series
GD S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
FDP24N40
FDPF24N40
400
Units
V
±30
V
-Continuous (TC = 25oC)
24
24*
-Continuous (TC = 100oC)
14.4
14.4*
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
24
A
EAR
Repetitive Avalanche Energy
(Note 1)
22.7
mJ
dv/dt
Peak Diode Recovery dv/dt
- Pulsed
(Note 1)
96*
(Note 2)
A
1296
(Note 3)
mJ
4.5
V/ns
(TC = 25oC)
227
40
W
- Derate above 25oC
1.8
0.3
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
96
A
-55 to +150
o
C
300
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
FDP24N40
FDPF24N40
RθJC
Symbol
Thermal Resistance, Junction to Case
Parameter
0.55
3.0
RθCS
Thermal Resistance, Case to Sink Typ.
0.5
-
RθJA
Thermal Resistance, Junction to Ambient
62.5
62.5
©2007 Fairchild Semiconductor Corporation
FDP24N40 / FDPF24N40 Rev. A
1
Units
o
C/W
www.fairchildsemi.com
FDP24N40 / FDPF24N40 N-Channel MOSFET
December 2007
Device Marking
FDP24N40
FDPF24N40
Device
FDP24N40
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
FDPF24N40
TO-220F
-
-
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
400
-
-
V
-
0.4
-
V/oC
μA
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250μA, VGS = 0V, TJ = 25oC
IDSS
Zero Gate Voltage Drain Current
VDS = 400V, VGS = 0V
-
-
1
VDS = 320V, TC = 125oC
-
-
10
IGSS
Gate to Body Leakage Current
VGS = ±30V, VDS = 0V
-
-
±100
3.0
-
5.0
V
-
0.140
0.175
Ω
-
34
-
S
ID = 250μA, Referenced to
25oC
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
Static Drain to Source On Resistance
VGS = 10V, ID = 12A
gFS
Forward Transconductance
VDS = 20V, ID = 12A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 320V, ID = 24A
VGS = 10V
(Note 4, 5)
-
2270
3020
pF
-
365
490
pF
-
25
38
pF
-
46
60
nC
-
12
-
nC
-
20
-
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 200V, ID = 24A
RG = 25Ω
(Note 4, 5)
-
40
90
ns
-
90
190
ns
-
110
230
ns
-
65
140
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
24
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
96
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 24A
-
-
1.4
V
trr
Reverse Recovery Time
360
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 24A
dIF/dt = 100A/μs
-
4.7
-
μC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 4.5mH, IAS = 24A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 24A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP24N40 / FDPF24N40 Rev. A
2
www.fairchildsemi.com
FDP24N40 / FDPF24N40 N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Figure 1. On-Region Characteristics
10
Figure 2. Transfer Characteristics
70
VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
ID,Drain Current[A]
ID,Drain Current[A]
50
1
10
o
150 C
o
25 C
o
-55 C
1
*Notes:
1. 250μs Pulse Test
o
2. TC = 25 C
0.2
0.1
1
VDS,Drain-Source Voltage[V]
4
8
5
6
7
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.19
200
0.18
100
0.16
VGS = 10V
VGS = 20V
0.14
o
150 C
o
25 C
10
*Notes:
1. VGS = 0V
o
*Note: TJ = 25 C
2. 250μs Pulse Test
0.12
0
10
20
30
ID, Drain Current [A]
40
1
0.2
50
Figure 5. Capacitance Characteristics
3000
Coss
Ciss
*Note:
1. VGS = 0V
2. f = 1MHz
2000
1000
1.4
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VGS, Gate-Source Voltage [V]
4000
0.6
1.0
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
5000
Capacitances [pF]
8
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
IS, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
0.2
0.05
Crss
VDS = 100V
VDS = 200V
VDS = 320V
8
6
4
2
*Note: ID = 24A
0
0.1
0
1
10
VDS, Drain-Source Voltage [V]
FDP24N40 / FDPF24N40 Rev. A
0
30
3
10
20
30
40
Qg, Total Gate Charge [nC]
50
www.fairchildsemi.com
FDP24N40 / FDPF24N40 N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation vs.
Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 250μA
0.8
-75
-25
25
75
125
o
TJ, Junction Temperature [ C]
2.0
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 12A
0.5
0.0
-75
175
Figure 9. Maximum Safe Operating Area
- FDP24N40
200
100
2.5
-25
25
75
125
o
TJ, Junction Temperature [ C]
175
Figure 10. Maximum Drain Current
vs. Case Temperature
25
10μs
20
1ms
10
ID, Drain Current [A]
ID, Drain Current [A]
100μs
10ms
DC
Operation in This Area
is Limited by R DS(on)
1
*Notes:
0.1
o
15
10
1. TC = 25 C
5
o
2. TJ = 150 C
3. Single Pulse
0.01
1
10
100
VDS, Drain-Source Voltage [V]
0
25
800
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 10. Transient Thermal Response Curve - FDP24N40
Thermal Response [ZθJC]
1
0.5
0.1
0.2
t1
0.05
t2
0.02
*Notes:
0.01
0.01
o
1. ZθJC(t) = 0.55 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.003
-5
10
FDP24N40 / FDPF24N40 Rev. A
PDM
0.1
-4
10
-3
-2
-1
0
10
10
10
10
Rectangular Pulse Duration [sec]
4
1
10
2
10
www.fairchildsemi.com
FDP24N40 / FDPF24N40 N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDP24N40 / FDPF24N40 N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP24N40 / FDPF24N40 Rev. A
5
www.fairchildsemi.com
FDP24N40 / FDPF24N40 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
V GS
( D r iv e r )
G S
G
S am e T ype
as DUT
V
DD
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id th
D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT )
d i/ d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v / d t
V
V
SD
DD
B o d y D io d e
F o r w a r d V o lt a g e D r o p
FDP24N40 / FDPF24N40 Rev. A
6
www.fairchildsemi.com
FDP24N40 / FDPF24N40 N-Channel MOSFET
Mechanical Dimensions
TO-220
FDP24N40 / FDPF24N40 Rev. A
7
www.fairchildsemi.com
FDP24N40 / FDPF24N40 N-Channel MOSFET
Mechanical Dimensions
TO-220F
3.30 ±0.10
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FDP24N40 / FDPF24N40 Rev. A
8
www.fairchildsemi.com
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
ACEx®
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EZSWITCH™ *
FPS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
™
®
tm
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
PDP-SPM™
Power220®
Power247®
POWEREDGE®
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
®
tm
SyncFET™
®
The Power Franchise®
tm
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.
2.
Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I32
FDP24N40 / FDPF24N40 Rev. A
9
www.fairchildsemi.com
FDP24N40 / FDPF24N40 N-Channel MOSFET
TRADEMARKS
Similar pages