N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H3192 █ NPN transistor for high frequency amplifier applications and HF, VHF band amplifier applications █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………625mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO——Collector-Base Voltage………………………………35V VCEO——Collector-Emitter Voltage……………………………30V V EB O ——Emitter-Base Voltage………………………………4V IC——Collector Current…………………………………………50mA IB——Base Current……………………………………………50mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics ICBO Min Typ Max Unit Test Conditions Collector Cut-off Current 0.1 nA VCB=35V, IE=0 IEBO Emitter-Base Cutoff Current 1.0 μA VEB=4V, IC=0 HFE DC Current Gain VCE(sat) Collector- Emitter Saturation Voltage 0.4 V IC=10mA, IB=1mA VBE(sat) Base-Emitter Saturation Voltage 1.0 V IC=10mA, IB=1mA GTP Power- Gain 27 33 dB VCE=6V, IC=1mA fT Current Gain-Bandwidth Product 100 400 MHz VCE=10V, IC=1mA Cob Output Capacitance 1.4 3.2 pF VCB=10V, IE=0，f=1MHz 40 240 29 2.0 VCE=12V, IC=2mA █ hFE Classification R 40—80 O 70—140 Y 120—240