HUASHAN H3192 Pnp silicon transistor Datasheet

N P N S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H3192
█ NPN transistor for high frequency amplifier applications and HF, VHF
band amplifier applications
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-92
T stg ——Storage Temperature………………………… -55~150℃
T j ——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………625mW
1―Emitter,E
2―Collector,C
3―Base,B
VCBO——Collector-Base Voltage………………………………35V
VCEO——Collector-Emitter Voltage……………………………30V
V EB O ——Emitter-Base Voltage………………………………4V
IC——Collector Current…………………………………………50mA
IB——Base Current……………………………………………50mA
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
ICBO
Min
Typ
Max
Unit
Test Conditions
Collector Cut-off Current
0.1
nA
VCB=35V, IE=0
IEBO
Emitter-Base Cutoff Current
1.0
μA
VEB=4V, IC=0
HFE
DC Current Gain
VCE(sat)
Collector- Emitter Saturation Voltage
0.4
V
IC=10mA, IB=1mA
VBE(sat)
Base-Emitter Saturation Voltage
1.0
V
IC=10mA, IB=1mA
GTP
Power- Gain
27
33
dB
VCE=6V, IC=1mA
fT
Current Gain-Bandwidth Product
100
400
MHz
VCE=10V, IC=1mA
Cob
Output Capacitance
1.4
3.2
pF
VCB=10V, IE=0,f=1MHz
40
240
29
2.0
VCE=12V, IC=2mA
█ hFE Classification
R
40—80
O
70—140
Y
120—240
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