ACE2342 N-Channel Enhancement Mode MOSFET Description The ACE2342 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features 20V/5.0A,RDS(ON)= 35mΩ@VGS=4.5V 20V/4.5A,RDS(ON)= 40mΩ@VGS=2.5V 20V/4.0A,RDS(ON)= 48mΩ@VGS=1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID 4.0 3.0 A Pulsed Drain Current IDM 13 A Continuous Source Current (Diode Conduction) IS 1.0 A Power Dissipation TA=25℃ TA=70℃ PD 1.25 0.8 W Operating Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 140 ℃/W VER 1.3 1 ACE2342 N-Channel Enhancement Mode MOSFET Packaging Type SOT-23-3 3 1 SOT-23-3 Description 1 Gate 2 Source 3 Drain 2 Ordering information ACE2342 XX + H Halogen - free Pb - free BM: SOT-23-3 VER 1.3 2 ACE2342 N-Channel Enhancement Mode MOSFET Electrical Characteristics (TA=25℃, Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA 20 Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA 0.4 Gate Leakage Current IGSS VDS=0.V, VGS=±12V ±100 Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 VDS=20V, VGS=0V TJ=55℃ 10 On-State Drain Current ID(ON) Drain-Source On-Resistance RDS(ON) VDS≧5V, VGS=4.5V 1.0 6 V nA uA A VGS=4.5V, ID=5.0A 0.026 0.035 VGS=2.5V, ID=4.5A 0.029 0.040 VGS=1.8V, ID=4.0A 0.035 0.048 Forward Transconductance Gfs VDS=15V, ID=5.0A 30 Diode Forward Voltage VSD IS=-1.0A, VGS=0V 0.8 1.2 10 13 Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time VDS=10V, VGS=4.5V, ID≡5.0A VDS=10V, VGS=0V, f=1MHz td(on) tr td(off) tf VDD=10V, RL=10Ω ID≡1.0A, VGEN=4.5V RG=6Ω 1.4 nC 2.1 600 120 pF 100 15 25 40 60 45 65 30 40 ns VER 1.3 3 ACE2342 N-Channel Enhancement Mode MOSFET Typical Characteristics VER 1.3 4 ACE2342 N-Channel Enhancement Mode MOSFET Typical Characteristics VER 1.3 5 ACE2342 N-Channel Enhancement Mode MOSFET Typical Characteristics VER 1.3 6 ACE2342 N-Channel Enhancement Mode MOSFET Packing Information SOT-23-3 VER 1.3 7 ACE2342 N-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.3 8