MMBTA42 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product FEATURES · · · A suffix of "-C" specifies halogen & lead-free SOT-23 Plastic-Encapsulate Transistors Power dissipation & Collector current Pcm: 0.3W Icm: 0.3A Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 High voltage V(BR): 300V A D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 L COLLECTOR 3 3 1 1 Top View B S 2 BASE V G J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 3 2 EMITTER C 1 2 D č Tamb=25¥ ELECTRICAL CHARACTERISTICS Parameter H unless Symbol J K otherwise Test All Dimension in mm Ď specified conditions Collector-base breakdown voltage V(BR)CBO Ic= 100 μA， Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA， Emitter-base breakdown voltage V(BR)EBO IE= 100μA， IC=0 Collector cut-off current ICBO VCB=200 V , IE=0 Emitter cut-off current IEBO VEB= 5V , IE=0 IB=0 MIN MAX UNIT 300 V 300 V 5 V IC=0 0.25 μA 0.1 μA HFE（1） VCE= 10V, IC= 1mA 60 HFE（2） VCE= 10V, IC=10mA 100 HFE（3） VCE=10V, IC=30mA 60 Collector-emitter saturation voltage VCE(sat) IC=20 mA, IB= 2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC= 20 m A, IB=2mA 0.9 V DC current gain 200 VCE= 20V, IC= 10mA Transition frequency fT 50 MHz f=30MHz DEVICE MARKING MMBTA42=1D http://www.SeCoSGmbH.com 01-June-2004 Rev. B Any changing of specification will not be informed individual Page 1 of 2 MMBTA42 NPN Silicon Elektronische Bauelemente General Purpose Transistor MMBTA42 120 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 100 80 25°C 60 40 −55°C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain f, T CURRENT−GAIN BANDWIDTH (MHz) 100 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance 80 70 60 50 40 30 TJ = 25°C VCE = 20 V f = 20 MHz 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 3. Current−Gain − Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ −55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 0.6 VBE(sat) @ −55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ −55°C, VCE = 10 V 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. “ON” Voltages http://www.SeCoSGmbH.com 01-June-2004 Rev. B Any changing of specification will not be informed individual Page 2 of 2