ISL8484 ® Data Sheet May 12, 2008 Ultra Low ON-Resistance, +1.65V to +4.5V, Single Supply, Dual SPDT Analog Switch The Intersil ISL8484 device is a low ON-resistance, low voltage, bidirectional, dual single-pole/double-throw (SPDT) analog switch designed to operate from a single +1.65V to +4.5V supply. Targeted applications include battery powered equipment that benefit from low rON (0.29Ω) and fast switching speeds (tON = 40ns, tOFF = 20ns). The digital logic input is 1.8V logic-compatible when using a single +3V supply. With a supply voltage of 4.2V and logic high voltage of 2.85V at both logic inputs, the part draws only 12µA max of I+ current. Cell phones, for example, often face ASIC functionality limitations. The number of analog input or GPIO pins may be limited and digital geometries are not well suited to analog switch performance. This part may be used to “mux-in” additional functionality while reducing ASIC design risk. The ISL8484 is offered in small form factor packages, alleviating board space limitations. The ISL8484 is a committed dual single-pole/double-throw (SPDT) that consist of two normally open (NO) and two normally closed (NC) switches. This configuration can be used as a dual 2-to-1 multi-plexer. The ISL8484 is pin compatible with the MAX4684 and MAX4685. FN6128.5 Features • Pin Compatible Replacement for the MAX4684 and MAX4685 • ON-Resistance (rON) - V+ = +4.3V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.29Ω - V+ = +3.0V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.33Ω - V+ = +1.8V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.55Ω • rON Matching Between Channels . . . . . . . . . . . . . . . . . 0.06Ω • rON Flatness Across Signal Range . . . . . . . . . . . . . . . . 0.03Ω • Single Supply Operation . . . . . . . . . . . . . . . +1.65V to +4.5V • Low Power Consumption (PD). . . . . . . . . . . . . . . <0.45µW • Fast Switching Action (V+ = +4.3V) - tON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40ns - tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20ns • ESD HBM Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>8kV • Guaranteed Break-Before-Make • 1.8V Logic Compatible (+3V supply) • Low I+ Current when VINH is not at the V+ Rail • Available in 10 Ld 3x3 TDFN and 10 Ld MSOP • Pb-Free Available (RoHS Compliant) Applications TABLE 1. FEATURES AT A GLANCE ISL8484 • Battery-powered, Handheld, and Portable Equipment - Cellular/mobile Phones - Pagers - Laptops, Notebooks, Palmtops NUMBER OF SWITCHES 2 SW SPDT or 2-1 MUX 4.3V rON 0.29Ω 4.3V tON/tOFF 40ns/20ns 3V rON 0.33Ω 3V tON/tOFF 50ns/27ns 1.8V rON 0.55Ω 1.8V tON/tOFF 70ns/54ns Packages 10 Ld 3x3 Thin DFN, 10 Ld MSOP • Portable Test and Measurement • Medical Equipment • Audio and Video Switching Related Literature • Technical Brief TB363 “Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs)” • Application Note AN557 “Recommended Test Procedures for Analog Switches” 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2006-2008. All Rights Reserved All other trademarks mentioned are the property of their respective owners. ISL8484 Pinout Truth Table (Note 1) ISL8484 (10 LD TDFN, MSOP) TOP VIEW LOGIC NC1 and NC2 NO1 and NO2 0 ON OFF 1 OFF ON 10 NO2 V+ 1 NOTE: 9 COM2 NO1 2 Pin Descriptions 8 IN2 COM1 3 IN1 4 7 NC2 NC1 5 6 GND Logic “0” ≤0.5V. Logic “1” ≥1.4V with a 3V supply. PIN V+ NOTE: 1. Switches Shown for Logic “0” Input. FUNCTION System Power Supply Input (+1.65V to +4.5V) GND Ground Connection INx Digital Control Input COMx Analog Switch Common Pin NOx Analog Switch Normally Open Pin NCx Analog Switch Normally Closed Pin Ordering Information PART NUMBER PART MARKING TEMP. RANGE (°C) PACKAGE PKG. DWG. # ISL8484IR* 484 -40 to +85 10 Ld 3x3 TDFN L10.3x3A ISL8484IU* 8484 -40 to +85 10 Ld MSOP M10.118 ISL8484IRZ* (Note) 484Z -40 to +85 10 Ld 3x3 TDFN (Pb-free) L10.3x3A ISL8484IUZ* (Note) 8484Z -40 to +85 10 Ld MSOP (Pb-free) M10.118 *Add “-T” suffix for tape and reel. Please refer to TB347 for details on reel specifications. NOTE: These Intersil Pb-free plastic packaged products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate PLUS ANNEAL - e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 2 FN6128.5 May 12, 2008 ISL8484 Absolute Maximum Ratings Thermal Information V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to 5.5V Input Voltages NO, NC, IN (Note 2). . . . . . . . . . . . . . . . . . . . . -0.5 to ((V+) + 0.5V) Output Voltages COM (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to ((V+) + 0.5V) Continuous Current NO, NC, or COM . . . . . . . . . . . . . . . . . ±300mA Peak Current NO, NC, or COM (Pulsed 1ms, 10% Duty Cycle, Max) . . . . . . . . . . . . . . . . . . ±500mA ESD Rating: Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>8kV Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>500V Charged Device Model. . . . . . . . . . . . . . . . . . . . . . . . . . . . >1.4kV Thermal Resistance (Typical) θJA (°C/W) θJC (°C/W) 10 Ld 3x3 TDFN Package (Notes 3, 4) 52 11 10 Ld MSOP Package (Note 5) . . . . . . 140 N/A Maximum Junction Temperature (Plastic Package). . . . . . . +150°C Maximum Storage Temperature Range . . . . . . . . . . . -65°C to +150°C Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to +85°C CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. NOTES: 2. Signals on NC, NO, IN, or COM exceeding V+ or GND are clamped by internal diodes. Limit forward diode current to maximum current ratings. 3. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech Brief TB379. 4. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside. 5. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. Electrical Specifications - 4.3V Supply PARAMETER Test Conditions: V+ = +3.9V to +4.5V, GND = 0V, VINH = 1.4V, VINL = 0.5V (Note 6), Unless otherwise specified. TEST CONDITIONS TEMP (°C) MIN (Notes 7, 11) TYP MAX (Notes 7, 11) UNITS Full 0 - V+ V ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VANALOG V+ = 3.9V, ICOM = 100mA, VNO or VNC = 0V to V+ (Figure 5, Note 9) ON-Resistance, rON rON Matching Between Channels, ΔrON V+ = 3.9V, ICOM = 100mA, VNO or VNC = Voltage at max RON (Note 9, 10) rON Flatness, rFLAT(ON) V+ = 3.9V, ICOM = 100mA, VNO or VNC = 0V to V+ (Note 8, 9) NO or NC OFF Leakage Current, INO(OFF) or INC(OFF) V+ = 4.5V, VCOM = 0.3V, 3V, VNO or VNC = 3V, 0.3V COM ON Leakage Current, ICOM(ON) V+ = 4.5V, VCOM = 0.3V, 3V, or VNO or VNC = 0.3V, 3V, or Floating 25 - 0.30 0.5 Ω Full - 0.35 0.7 Ω 25 - 0.06 0.07 Ω Full - 0.08 0.08 Ω 25 - 0.03 0.15 Ω Full - 0.04 0.15 Ω 25 -100 - 100 nA Full -195 - 195 nA 25 -100 - 100 nA Full -195 - 195 nA 25 - 40 - ns DYNAMIC CHARACTERISTICS Turn-ON Time, tON V+ = 3.9V, VNO or VNC = 3.0V, RL = 50Ω, CL = 35pF (Figure 1) Turn-OFF Time, tOFF V+ = 3.9V, VNO or VNC = 3.0V, RL = 50Ω, CL = 35pF (Figure 1) Break-Before-Make Time Delay, tD V+ = 4.5V, VNO or VNC = 3.0V, RL = 50Ω, CL = 35pF (Figure 3) Full - 50 - ns 25 - 20 - ns Full - 30 - ns Full - 8 - ns Charge Injection, Q CL = 1.0nF, VG = 0V, RG = 0Ω (Figure 2) 25 - 170 - pC OFF Isolation RL = 50Ω, CL = 5pF, f = 100kHz, VCOM = 1VRMS (Figure 4) 25 - 62 - dB Crosstalk (Channel-to-Channel) RL = 50Ω, CL = 5pF, f = 100kHz, VCOM = 1VRMS (Figure 6) 25 - -85 - dB 3 FN6128.5 May 12, 2008 ISL8484 Electrical Specifications - 4.3V Supply Test Conditions: V+ = +3.9V to +4.5V, GND = 0V, VINH = 1.4V, VINL = 0.5V (Note 6), Unless otherwise specified. TEMP (°C) MIN (Notes 7, 11) TYP 25 - 0.005 - % NO or NC OFF Capacitance, COFF f = 1MHz, VNO or VNC = VCOM = 0V (Figure 7) 25 - 62 - pF COM ON Capacitance, CCOM(ON) f = 1MHz, VNO or VNC = VCOM = 0V (Figure 7) 25 - 176 - pF Full 1.65 - 4.5 V 25 - - 0.1 µA Full - - 1 µA 25 - - 12 µA Input Voltage Low, VINL Full - - 0.5 V Input Voltage High, VINH Full 1.4 - - V Full -0.5 - 0.5 µA PARAMETER TEST CONDITIONS Total Harmonic Distortion f = 20Hz to 20kHz, VCOM = 2VP-P, RL = 600Ω MAX (Notes 7, 11) UNITS POWER SUPPLY CHARACTERISTICS Power Supply Range V+ = +4.5V, VIN = 0V or V+ Positive Supply Current, I+ V+ = +4.2V, VIN = 2.85V Positive Supply Current, I+ DIGITAL INPUT CHARACTERISTICS Input Current, IINH, IINL V+ = 4.5V, VIN = 0V or V+ (Note 9) Electrical Specifications - 3V Supply PARAMETER Test Conditions: V+ = +2.7V to +3.3V, GND = 0V, VINH = 1.4V, VINL = 0.5V (Note 6), Unless otherwise specified. TEST CONDITIONS TEMP (°C) MIN (Notes 7, 11) TYP MAX (Notes 7, 11) UNITS Full 0 - V+ V 25 - 0.35 0.5 Ω Full - - 0.7 Ω ANALOG SWITCH CHARACTERISTICS Analog Signal range, VANALOG V+ = 2.7V, ICOM = 100mA, VNO or VNC = 0V to V+ (Figure 5) ON-Resistance, rON rON Matching Between Channels, ΔrON V+ = 2.7V, ICOM = 100mA, VNO or VNC = Voltage at max RON (Note 10) rON Flatness, rFLAT(ON) V+ = 2.7V, ICOM = 100mA, VNO or VNC = 0V to V+ (Note 8) NO or NC OFF Leakage Current, INO(OFF) or INC(OFF) V+ = 3.3V, VCOM = 0.3V, 3V, VNO or VNC = 3V, 0.3V COM ON Leakage Current, ICOM(ON) V+ = 3.3V, VCOM = 0.3V, 3V, or VNO or VNC = 0.3V, 3V, or Floating 25 - 0.06 0.07 Ω Full - - 0.08 Ω 25 - 0.03 0.15 Ω Full - - 0.15 Ω 25 - 0.9 - nA Full - 30 - nA 25 - 0.8 - nA Full - 30 - nA 25 - 50 - ns Full - 60 - ns 25 - 27 - ns Full - 35 - ns Full - 9 - ns DYNAMIC CHARACTERISTICS Turn-ON Time, tON V+ = 2.7V, VNO or VNC = 1.5V, RL = 50Ω, CL = 35pF (Figure 1) Turn-OFF Time, tOFF V+ = 2.7V, VNO or VNC = 1.5V, RL = 50Ω, CL = 35pF (Figure 1) Break-Before-Make Time Delay, tD V+ = 3.3V, VNO or VNC = 1.5V, RL = 50Ω, CL = 35pF (Figure 3) Charge Injection, Q CL = 1.0nF, VG = 0V, RG = 0Ω (Figure 2) 25 - 94 - pC OFF Isolation RL = 50Ω, CL = 5pF, f = 100kHz, VCOM = 1VRMS (Figure 4) 25 - 62 - dB Crosstalk (Channel-to-Channel) RL = 50Ω, CL = 5pF, f = 100kHz, VCOM = 1VRMS, (Figure 6) 25 - -85 - dB Total Harmonic Distortion f = 20Hz to 20kHz, VCOM = 2VP-P, RL = 600Ω 25 - 0.005 - % 4 FN6128.5 May 12, 2008 ISL8484 Electrical Specifications - 3V Supply Test Conditions: V+ = +2.7V to +3.3V, GND = 0V, VINH = 1.4V, VINL = 0.5V (Note 6), Unless otherwise specified. (Continued) TEMP (°C) MIN (Notes 7, 11) TYP NO or NC OFF Capacitance, COFF f = 1MHz, VNO or VNC = VCOM = 0V (Figure 7) 25 - 65 - pF f = 1MHz, VNO or VNC = VCOM = 0V (Figure 7) 25 - 181 - pF 25 - 0.01 - µA Full - 0.52 - µA PARAMETER TEST CONDITIONS COM ON Capacitance, CCOM(ON) MAX (Notes 7, 11) UNITS POWER SUPPLY CHARACTERISTICS V+ = +3.6V, VIN = 0V or V+ Positive Supply Current, I+ DIGITAL INPUT CHARACTERISTICS Input Voltage Low, VINL 25 - - 0.5 V Input Voltage High, VINH 25 1.4 - - V Full -0.5 - 0.5 µA Input Current, IINH, IINL V+ = 3.3V, VIN = 0V or V+ (Note 9) Electrical Specifications - 1.8V Supply Test Conditions: V+ = +1.65V to +2V, GND = 0V, VINH = 1.0V, VINL = 0.4V (Note 6), Unless otherwise specified. TEMP (°C) MIN (Notes 7, 11) TYP Full 0 - V+ V 25 - 0.7 0.8 Ω Full - - 0.85 Ω 25 - 70 - ns Full - 80 - ns 25 - 54 - ns Full - 65 - ns Full - 10 - ns 25 - 42 - pC NO or NC OFF Capacitance, COFF f = 1MHz, VNO or VNC = VCOM = 0V (Figure 7) 25 - 70 - pF COM ON Capacitance, CCOM(ON) f = 1MHz, VNO or VNC = VCOM = 0V (Figure 7) 25 - 186 - pF 25 - - 0.4 V 25 1.0 - - V Full -0.5 - 0.5 µA PARAMETER TEST CONDITIONS MAX (Notes 7, 11) UNITS ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VANALOG V+ = 1.65V, ICOM = 100mA, VNO or VNC = 0V to V+ (Figure 5) ON-Resistance, rON DYNAMIC CHARACTERISTICS Turn-ON Time, tON V+ = 1.65V, VNO or VNC = 1.0V, RL = 50Ω, CL = 35pF (Figure 1) Turn-OFF Time, tOFF V+ = 1.65V, VNO or VNC = 1.0V, RL = 50Ω, CL = 35pF (Figure 1) Break-Before-Make Time Delay, tD V+ = 2.0V, VNO or VNC = 1.0V, RL = 50Ω, CL = 35pF (Figure 3) CL = 1.0nF, VG = 0V, RG = 0Ω (Figure 2) Charge Injection, Q DIGITAL INPUT CHARACTERISTICS Input Voltage Low, VINL Input Voltage High, VINH Input Current, IINH, IINL V+ = 2.0V, VIN = 0V or V+ (Note 9) NOTES: 6. VIN = input voltage to perform proper function. 7. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. 8. Flatness is defined as the difference between maximum and minimum value of ON-resistance over the specified analog signal range. 9. Limits established by characterization and are not production tested. 10. RON matching between channels is calculated by subtracting the channel with the highest max rON value from the channel with lowest max rON value, between NC1 and NC2 or between NO1 and NO2. 11. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. 5 FN6128.5 May 12, 2008 ISL8484 Test Circuits and Waveforms V+ V+ LOGIC INPUT tr < 5ns tf < 5ns 50% C 0V tOFF SWITCH INPUT VNO SWITCH INPUT COM IN VOUT 90% SWITCH OUTPUT VOUT NO OR NC 90% LOGIC INPUT CL 35pF RL 50Ω GND 0V tON Logic input waveform is inverted for switches that have the opposite logic sense. Repeat test for all switches. CL includes fixture and stray capacitance. rL V OUT = V (NO or NC) -------------------------r L + r ( ON ) FIGURE 1A. MEASUREMENT POINTS FIGURE 1B. TEST CIRCUIT FIGURE 1. SWITCHING TIMES V+ RG SWITCH OUTPUT VOUT C VOUT COM NO OR NC ΔVOUT VG GND IN CL V+ LOGIC INPUT ON ON LOGIC INPUT OFF 0V Q = ΔVOUT x CL Repeat test for all switches. FIGURE 2A. MEASUREMENT POINTS FIGURE 2B. TEST CIRCUIT FIGURE 2. CHARGE INJECTION V+ V+ LOGIC INPUT VNX NO VOUT COM NC 0V RL 50Ω IN SWITCH OUTPUT VOUT C 90% LOGIC INPUT CL 35pF GND 0V tD FIGURE 3A. MEASUREMENT POINTS Repeat test for all switches. CL includes fixture and stray capacitance. FIGURE 3B. TEST CIRCUIT FIGURE 3. BREAK-BEFORE-MAKE TIME 6 FN6128.5 May 12, 2008 ISL8484 Test Circuits and Waveforms (Continued) V+ C V+ C SIGNAL GENERATOR RON = V1/100mA NO OR NC NO OR NC IN VNX 0V OR V+ 100mA IN V1 0V OR V+ COM ANALYZER GND COM RL GND Signal direction through switch is reversed, worst case values are recorded. Repeat test for all switches. Repeat test for all switches. FIGURE 4. OFF-ISOLATION TEST CIRCUIT FIGURE 5. rON TEST CIRCUIT V+ C V+ C SIGNAL GENERATOR NO OR NC COM 50Ω NO OR NC IN1 IN 0V OR V+ 0V OR V+ IMPEDANCE ANALYZER NC or NO COM ANALYZER COM NC GND RL Signal direction through switch is reversed, worst case values are recorded. Repeat test for all switches. FIGURE 6. CROSSTALK TEST CIRCUIT Detailed Description The ISL8484 is a bidirectional, dual single pole/double throw (SPDT) analog switch that offers precise switching capability from a single 1.65V to 4.5V supply with low on-resistance (0.29Ω) and high speed operation (tON = 40ns, tOFF = 20ns). The device is especially well suited for portable battery-powered equipment due to its low operating supply voltage (1.65V), low power consumption (4.5µW max), low leakage currents (195nA max), and the tiny DFN and MSOP packages. The ultra low on-resistance and rON flatness provide very low insertion loss and distortion to applications that require signal reproduction. External V+ Series Resistor For improved ESD and latch-up immunity Intersil recommends adding a 100Ω resistor in series with the V+ power supply pin of the ISL8484 IC (see Figure 8). 7 GND Repeat test for all switches. FIGURE 7. CAPACITANCE TEST CIRCUIT During an overvoltage transient event, such as occurs during system level IEC 61000 ESD testing, substrate currents can be generated in the IC that can trigger parasitic SCR structures to turn ON, creating a low impedance path from the V+ power supply to ground. This will result in a significant amount of current flow in the IC which can potentially create a latch-up state or permanently damage the IC. The external V+ resistor limits the current during this over-stress situation and has been found to prevent latch-up or destructive damage for many overvoltage transient events. Under normal operation the sub-microamp IDD current of the IC produces an insignificant voltage drop across the 100Ω series resistor resulting in no impact to switch operation or performance. FN6128.5 May 12, 2008 ISL8484 This method is not acceptable for the signal path inputs. Adding a series resistor to the switch input defeats the purpose of using a low rON switch. Connecting Schottky diodes to the signal pins as shown in Figure 8 will shunt the fault current to the supply or to ground thereby protecting the switch. These Schottky diodes must be sized to handle the expected fault current. . V+ OPTIONAL PROTECTION RESISTOR C 100Ω NO COM NC Power-Supply Considerations IN GND FIGURE 8. V+ SERIES RESISTOR FOR ENHANCED ESD AND LATCH-UP IMMUNITY The minimum recommended supply voltage is 1.65V. It is important to note that the input signal range, switching times, and on-resistance degrade at lower supply voltages. Refer to the “Electrical Specifications” tables, beginning on page 3, and “Typical Performance Curves”, beginning on page 9, for details. OPTIONAL SCHOTTKY DIODE V+ OPTIONAL PROTECTION RESISTOR INX VNX The ISL8484 construction is typical of most single supply CMOS analog switches, in that they have two supply pins: V+ and GND. V+ and GND drive the internal CMOS switches and set their analog voltage limits. Unlike switches with a 4V maximum supply voltage, the ISL8484 5.5V maximum supply voltage provides plenty of room for the 10% tolerance of 4.3V supplies, as well as room for overshoot and noise spikes. VCOM GND OPTIONAL SCHOTTKY DIODE V+ and GND also power the internal logic and level shiftiers. The level shiftiers convert the input logic levels to switched V+ and GND signals to drive the analog switch gate terminals. This family of switches cannot be operated with bipolar supplies, because the input switching point becomes negative in this configuration. FIGURE 9. OVERVOLTAGE PROTECTION Logic-Level Thresholds Supply Sequencing and Overvoltage Protection With any CMOS device, proper power supply sequencing is required to protect the device from excessive input currents which might permanently damage the IC. All I/O pins contain ESD protection diodes from the pin to V+ and to GND (see Figure 9). To prevent forward biasing these diodes, V+ must be applied before any input signals, and the input signal voltages must remain between V+ and GND. If these conditions cannot be guaranteed, then precautions must be implemented to prohibit the current and voltage at the logic pin and signal pins from exceeding the maximum ratings of the switch. The following two methods can be used to provided additional protection to limit the current in the event that the voltage at a signal pin or logic pin goes below ground or above the V+ rail. Logic inputs can be protected by adding a 1kΩ resistor in series with the logic input (see Figure 9). The resistor limits the input current below the threshold that produces permanent damage, and the sub-microamp input current produces an insignificant voltage drop during normal operation. 8 This switch family is 1.8V CMOS compatible (0.5V and 1.4V) over a supply range of 2.7V to 4.5V (see Figure18). At 2.7V the VIL level is about 0.53V. This is still above the 1.8V CMOS guaranteed low output maximum level of 0.5V, but noise margin is reduced. The digital input stages draw supply current whenever the digital input voltage is not at one of the supply rails. Driving the digital input signals from GND to V+ with a fast transition time minimizes power dissipation. The ISL8484 has been designed to minimize the supply current whenever the digital input voltage is not driven to the supply rails (0V to V+). For example driving the device with 2.85V logic (0V to 2.85V) while operating with a 4.2V supply the device draws only 12µA of current (see Figure17 for VIN = 2.85V). High-Frequency Performance In 50Ω systems, the signal response is reasonably flat even past 30MHz with a -3dB bandwidth of 120MHz (see Figure 22). The frequency response is very consistent over a wide V+ range, and for varying analog signal levels. FN6128.5 May 12, 2008 ISL8484 An OFF switch acts like a capacitor and passes higher frequencies with less attenuation, resulting in signal feedthrough from a switch’s input to its output. Off Isolation is the resistance to this feedthrough, while crosstalk indicates the amount of feedthrough from one switch to another. Figure 23 details the high off isolation and crosstalk rejection provided by this part. At 100kHz, off isolation is about 62dB in 50Ω systems, decreasing approximately 20dB per decade as frequency increases. Higher load impedances decrease off isolation and crosstalk rejection due to the voltage divider action of the switch OFF impedance and the load impedance. Leakage Considerations Virtually all the analog leakage current comes from the ESD diodes to V+ or GND. Although the ESD diodes on a given signal pin are identical and therefore fairly well balanced, they are reverse biased differently. Each is biased by either V+ or GND and the analog signal. This means their leakages will vary as the signal varies. The difference in the two diode leakages to the V+ and GND pins constitutes the analog-signal-path leakage current. All analog leakage current flows between each pin and one of the supply terminals, not to the other switch terminal. This is why both sides of a given switch can show leakage currents of the same or opposite polarity. There is no connection between the analog signal paths and V+ or GND. Reverse ESD protection diodes are internally connected between each analog-signal pin and both V+ and GND. One of these diodes conducts if any analog signal exceeds V+ or GND. Typical Performance Curves TA = +25°C, Unless Otherwise Specified. 0.30 0.35 ICOM = 100mA ICOM = 100mA 0.34 0.29 0.33 V+ = 2.7V rON (Ω) rON (Ω) 0.28 0.27 0.32 0.31 V+ = 3.9V V+ = 3V 0.3 0.26 V+ = 4.3V 0.25 0.29 V+ = 4.5V 0 1 2 3 4 V+ = 3.3V 0.28 5 0 0.5 1.0 1.5 2.0 VCOM (V) VCOM (V) FIGURE 10. ON-RESISTANCE vs SUPPLY VOLTAGE vs SWITCH VOLTAGE 0.35 3.5 V+ = 4.3V ICOM = 100mA ICOM = 100mA 0.65 +85°C V+ = 1.65V 0.30 rON (Ω) 0.55 rON (Ω) 3.0 FIGURE 11. ON-RESISTANCE vs SUPPLY VOLTAGE vs SWITCH VOLTAGE 0.70 0.60 2.5 V+ = 1.8V 0.50 +25°C 0.45 0.25 V+ = 2V 0.40 0.35 -40°C 0.30 0.20 0 0.5 1.0 1.5 VCOM (V) FIGURE 12. ON-RESISTANCE vs SUPPLY VOLTAGE vs SWITCH VOLTAGE 9 2.0 0 1.0 2.0 3.0 VCOM (V) 4.0 5.0 FIGURE 13. ON-RESISTANCE vs SWITCH VOLTAGE FN6128.5 May 12, 2008 ISL8484 Typical Performance Curves TA = +25°C, Unless Otherwise Specified. (Continued) 0.40 0.40 V+ = 3.3V ICOM = 100mA V+ = 2.7V ICOM = 100mA +85°C 0.35 0.30 0.35 rON (Ω) rON (Ω) +85°C +25°C +25°C 0.30 0.25 -40°C -40°C 0.20 0 0.5 1.0 1.5 2.0 2.5 3.0 0.25 3.5 0 0.5 1.0 1.5 0.60 3.0 200 V+ = 1.8V ICOM = 100mA +85°C V+ = 4.2V SWEEPING BOTH LOGIC INPUTS +25°C 150 0.50 -40°C 0.45 ION (mA) rON (Ω) 2.5 FIGURE 15. ON-RESISTANCE vs SWITCH VOLTAGE FIGURE 14. ON RESISTANCE vs SWITCH VOLTAGE 0.55 2.0 VCOM (V) VCOM (V) 0.40 0.35 100 50 0.30 0 0.25 0 0.5 1.0 VCOM (V) 1.5 2.0 1 2 3 4 5 VIN 1 AND 2 (V) FIGURE 16. ON-RESISTANCE vs SWITCH VOLTAGE FIGURE 17. SUPPLY CURRENT vs VLOGIC VOLTAGE 200 1.1 1.0 150 0.9 VINH AND VINL (V) Q (pC) 100 V+ = 4.3V 50 V+ = 1.8V 0 VINH 0.7 VINL 0.6 0.5 V+ = 3V -50 -100 0.8 0.4 0 1 2 3 4 VCOM (V) FIGURE 18. CHARGE INJECTION vs SWITCH VOLTAGE 10 5 0.3 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V+ (V) FIGURE 19. DIGITAL SWITCHING POINT vs SUPPLY VOLTAGE FN6128.5 May 12, 2008 ISL8484 250 200 200 150 +85°C 150 tOFF (ns) tON (ns) Typical Performance Curves TA = +25°C, Unless Otherwise Specified. (Continued) +25°C +85°C 100 +25°C -40°C 100 50 1.5 2.0 2.5 3.0 V+ (V) 3.5 4.0 0 1.0 4.5 3.5 4.0 4.5 10 V+ = 4.3V GAIN -20 0 PHASE 20 60 80 RL = 50Ω VIN = 0.2VP-P to 2VP-P PHASE (°) 40 1 2.5 3.0 V+ (V) -10 V+ = 3V 0 2.0 FIGURE 21. TURN-OFF TIME vs SUPPLY VOLTAGE 100 10 100 600 FREQUENCY (MHz) FIGURE 22. FREQUENCY RESPONSE CROSSTALK (dB) NORMALIZED GAIN (dB) FIGURE 20. TURN-ON TIME vs SUPPLY VOLTAGE 1.5 -20 20 -30 30 -40 40 -50 50 ISOLATION -60 60 -70 70 -80 80 CROSSTALK -90 90 -100 -110 1k OFF ISOLATION (dB) 25 1.0 -40°C 100 10k 100k 1M 10M 110 100M 500M FREQUENCY (Hz) FIGURE 23. CROSSTALK AND OFF ISOLATION Die Characteristics SUBSTRATE POTENTIAL (POWERED UP): GND (DFN Paddle Connection: Tie to GND or Float) TRANSISTOR COUNT: 114 PROCESS: Submicron CMOS 11 FN6128.5 May 12, 2008 ISL8484 Thin Dual Flat No-Lead Plastic Package (TDFN) L10.3x3A 2X 0.10 C A A 10 LEAD THIN DUAL FLAT NO-LEAD PLASTIC PACKAGE D MILLIMETERS 2X 0.10 C B SYMBOL MIN NOMINAL MAX NOTES A 0.70 0.75 0.80 - A1 - - 0.05 - E A3 6 INDEX AREA TOP VIEW B // A C SEATING PLANE 0.08 C b 0.20 0.25 0.30 5, 8 D 2.95 3.0 3.05 - D2 2.25 2.30 2.35 7, 8 E 2.95 3.0 3.05 - E2 1.45 1.50 1.55 7, 8 e 0.50 BSC - k 0.25 - - - L 0.25 0.30 0.35 8 A3 SIDE VIEW D2 (DATUM B) 0.10 C 0.20 REF 7 8 N 10 2 Nd 5 3 Rev. 3 3/06 D2/2 NOTES: 6 INDEX AREA 1 2 1. Dimensioning and tolerancing conform to ASME Y14.5-1994. 2. N is the number of terminals. NX k 3. Nd refers to the number of terminals on D. (DATUM A) 4. All dimensions are in millimeters. Angles are in degrees. E2 E2/2 5. Dimension b applies to the metallized terminal and is measured between 0.15mm and 0.30mm from the terminal tip. 6. The configuration of the pin #1 identifier is optional, but must be located within the zone indicated. The pin #1 identifier may be either a mold or mark feature. NX L N N-1 NX b 8 e (Nd-1)Xe REF. BOTTOM VIEW 5 7. Dimensions D2 and E2 are for the exposed pads which provide improved electrical and thermal performance. 0.10 M C A B 8. Nominal dimensions are provided to assist with PCB Land Pattern Design efforts, see Intersil Technical Brief TB389. 9. Compliant to JEDEC MO-229-WEED-3 except for D2 dimensions. CL NX (b) (A1) L1 5 9 L e SECTION "C-C" C C TERMINAL TIP FOR ODD TERMINAL/SIDE 12 FN6128.5 May 12, 2008 ISL8484 Mini Small Outline Plastic Packages (MSOP) M10.118 (JEDEC MO-187BA) 10 LEAD MINI SMALL OUTLINE PLASTIC PACKAGE INCHES N SYMBOL E1 E -B- INDEX AREA 0.20 (0.008) 1 2 A B C TOP VIEW 4X θ 0.25 (0.010) R1 R GAUGE PLANE A 4X θ A2 A1 b -H- 0.10 (0.004) L L1 SEATING PLANE C -Ae D 0.20 (0.008) C C MILLIMETERS MAX MIN MAX A 0.037 0.043 0.94 1.10 - 0.002 0.006 0.05 0.15 - A2 0.030 0.037 0.75 0.95 - b 0.007 0.011 0.18 0.27 9 c 0.004 0.008 0.09 0.20 - D 0.116 0.120 2.95 3.05 3 E1 0.116 0.120 2.95 3.05 4 0.020 BSC 0.50 BSC - E 0.187 0.199 4.75 5.05 - L 0.016 0.028 0.40 0.70 6 L1 0.037 REF 0.95 REF - N 10 10 7 R 0.003 - 0.07 - - R1 0.003 - 0.07 - - θ 5o 15o 5o 15o - α 0o 6o 0o 6o Rev. 0 12/02 a SIDE VIEW CL E1 0.20 (0.008) NOTES A1 e SEATING PLANE -C- MIN C D -B- END VIEW NOTES: 1. These package dimensions are within allowable dimensions of JEDEC MO-187BA. 2. Dimensioning and tolerancing per ANSI Y14.5M-1994. 3. Dimension “D” does not include mold flash, protrusions or gate burrs and are measured at Datum Plane. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension “E1” does not include interlead flash or protrusions and are measured at Datum Plane. - H - Interlead flash and protrusions shall not exceed 0.15mm (0.006 inch) per side. 5. Formed leads shall be planar with respect to one another within 0.10mm (.004) at seating Plane. 6. “L” is the length of terminal for soldering to a substrate. 7. “N” is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall be 0.08mm (0.003 inch) total in excess of “b” dimension at maximum material condition. Minimum space between protrusion and adjacent lead is 0.07mm (0.0027 inch). 10. Datums -A -H- . and - B - to be determined at Datum plane 11. Controlling dimension: MILLIMETER. Converted inch dimensions are for reference only All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 13 FN6128.5 May 12, 2008