isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFS624A FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 3.4 A IDM Drain Current-Single Pluse 13.6 A PD Total Dissipation @TC=25℃ 34 W TJ Max. Operating Junction Temperature -55~150 ℃ Storage Temperature -55~150 ℃ MAX UNIT Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case 3.7 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFS624A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)DSS PARAMETER CONDITIONS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance IGSS MIN MAX UNIT 250 2 V 4 V VGS= 10V; ID=1.7A 1.1 Ω Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 250V; VGS= 0 VDS= 200V; VGS= 0; Tj= 125℃ 10 100 μA VSD Forward On-Voltage IS= 3.4A; VGS= 0 1.5 V · isc website：www.iscsemi.cn PDF pdfFactory Pro 2 isc & iscsemi is registered trademark www.fineprint.cn