MCR12DG, MCR12MG, MCR12NG Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave silicon gate−controlled devices are needed. http://onsemi.com SCRs 12 AMPERES RMS 400 thru 800 VOLTS Features • • • • • • • • Blocking Voltage to 800 Volts On−State Current Rating of 12 Amperes RMS at 80°C High Surge Current Capability − 100 Amperes Rugged, Economical TO−220AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of IGT, VGT an IH Specified for Ease of Design High Immunity to dv/dt − 100 V/msec Minimum at 125°C These are Pb−Free Devices G A K MARKING DIAGRAM AY WW MCR12xG AKA MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR12D MCR12M MCR12N VDRM, VRRM On-State RMS Current (180° Conduction Angles; TC = 80°C) IT(RMS) 12 A Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) ITSM 100 A Circuit Fusing Consideration (t = 8.33 ms) I2t 41 A2sec PGM 5.0 W Forward Average Gate Power (t = 8.3 ms, TC = 80°C) PG(AV) 0.5 W Average On-State Current (180° Conduction Angles; TC = 80°C) IT(AV) 7.8 A Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 90°C) IGM 2.0 A Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) Value Unit V November, 2012 − Rev. 5 2 TO−220 CASE 221A−09 STYLE 3 3 400 600 800 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. © Semiconductor Components Industries, LLC, 2012 1 1 A Y WW x G AKA = Assembly Location = Year = Work Week = D, M, or N = Pb−Free Package = Diode Polarity PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION Package Shipping MCR12DG Device TO−220AB (Pb−Free) 50 Units / Rail MCR12MG TO−220AB (Pb−Free) 50 Units / Rail MCR12NG TO−220AB (Pb−Free) 50 Units / Rail Publication Order Number: MCR12/D MCR12DG, MCR12MG, MCR12NG THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol Value Unit RqJC RqJA 2.2 62.5 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max − − − − 0.01 2.0 Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VD = Rated VDRM and VRRM; Gate Open) IDRM, IRRM TJ = 25°C TJ = 125°C mA ON CHARACTERISTICS Peak Forward On−State Voltage (Note 2) (ITM = 24 A) VTM − − 2.2 V Gate Trigger Current (Continuous dc) (VD = 12 V; RL = 100 W) IGT 2.0 8.0 20 mA Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA) IH 4.0 20 40 mA Latch Current (VD = 12 V, IG = 20 mA) IL 6.0 25 60 mA VGT 0.5 0.65 1.0 V Critical Rate of Rise of Off−State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dv/dt 100 250 − V/ms Repetitive Critical Rate of Rise of On−State Current IPK = 50 A, Pw = 40 msec, diG/dt = 1 A/msec, Igt = 50 mA di/dt − − 50 A/ms Gate Trigger Voltage (Continuous dc) (VD = 12 V; RL =100 W) DYNAMIC CHARACTERISTICS 2. Indicates Pulse Test: Pulse Width v 2.0 ms, Duty Cycle v 2%. Voltage Current Characteristic of SCR Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current + Current VTM on state IH IRRM at VRRM + Voltage IDRM at VDRM Reverse Blocking Region (off state) Forward Blocking Region (off state) P(AV) , AVERAGE POWER DISSIPATION (WATTS) Reverse Avalanche Region Anode − TC , CASE TEMPERATURE (° C) 125 120 115 110 105 dc 100 95 90 30° 0 1 Anode + 60° 90° 180° 2 3 6 7 8 9 10 11 4 5 IT(RMS), RMS ON−STATE CURRENT (AMPS) 12 20 18 180° 16 14 90° 12 10 30° 8 6 4 2 0 0 Figure 1. Typical RMS Current Derating 1 2 6 7 3 4 5 8 9 10 11 12 IT(AV), AVERAGE ON−STATE CURRENT (AMPS) Figure 2. On−State Power Dissipation http://onsemi.com 2 dc 100 20 MAXIMUM @ TJ = 25°C 18 GATE TRIGGER CURRENT (mA) I T, INSTANTANEOUS ON-STATE CURRENT (AMPS) MCR12DG, MCR12MG, MCR12NG MAXIMUM @ TJ = 125°C 10 1 14 12 10 8 6 4 2 0.1 0.5 1.0 1.5 2.0 2.5 0 −40 −25 −10 3.0 5 20 35 50 65 80 95 110 125 VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Typical On−State Characteristics Figure 4. Typical Gate Trigger Current versus Junction Temperature 1.0 VGT, GATE TRIGGER VOLTAGE (VOLTS) 100 10 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 −40 −25 −10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) 1 −40 −25 −10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Holding Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature 100 IL , LATCHING CURRENT (mA) IH, HOLDING CURRENT (mA) 16 10 1 −40 −25 −10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Latching Current versus Junction Temperature http://onsemi.com 3 MCR12DG, MCR12MG, MCR12NG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AG −T− B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 CATHODE ANODE GATE ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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